RJP6 Search Results

RJP6 Result Highlights (5)

Part	Manufacturer	Description
RJP65S03DWT-80#X0	Renesas Electronics Corporation	IGBT 650V 30A Chip
RJP60D0DPP-M0#T2	Renesas Electronics Corporation	IGBT for Inverter Applications, TO-220FL, /Tube
RJP6065DPP-00#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP65S08DWA-00#W0	Renesas Electronics Corporation	IGBT 650V 200A Wafer
RJP65D05DWT-80#X0	Renesas Electronics Corporation	IGBT for Inverter Applications

RJP6 Price and Stock

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Panasonic Electronic Components ERJ-P6WF1000V RES SMD 100 OHM 1% 1/2W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-P6WF1000V	Reel	20,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.08612	Buy Now
Mouser Electronics	ERJ-P6WF1000V		43,081			1 $0.49 10 $0.186 100 $0.124 1000 $0.112 10000 $0.083	Buy Now
TTI	ERJ-P6WF1000V	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.082	Buy Now
Master Electronics	ERJ-P6WF1000V		6,000			1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
Ozdisan Elektronik	ERJ-P6WF1000V					1 - 10 $0.1242 100 $0.1242 1000 $0.1242 10000 $0.108	Get Quote
Panasonic Electronic Components ERJ-P6WJ120V RES SMD 12 OHM 5% 1/2W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-P6WJ120V	Digi-Reel	14,571		1	1 $0.41 10 $0.221 100 $0.1336 1000 $0.09063 10000 $0.09063	Buy Now
	ERJ-P6WJ120V	Cut Tape	14,571		1	1 $0.41 10 $0.221 100 $0.1336 1000 $0.09063 10000 $0.09063	Buy Now
	ERJ-P6WJ120V	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.06908	Buy Now
Master Electronics	ERJ-P6WJ120V					1 - 10 - 100 - 1000 - 10000 $0.0704	Buy Now
Panasonic Electronic Components ERJ-P6WJ1R8V RES SMD 1.8 OHM 5% 1/2W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-P6WJ1R8V	Digi-Reel	9,893		1	1 $0.41 10 $0.221 100 $0.1336 1000 $0.09063 10000 $0.09063	Buy Now
	ERJ-P6WJ1R8V	Cut Tape	9,893		1	1 $0.41 10 $0.221 100 $0.1336 1000 $0.09063 10000 $0.09063	Buy Now
	ERJ-P6WJ1R8V	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.06908	Buy Now
Master Electronics	ERJ-P6WJ1R8V					1 - 10 - 100 - 1000 - 10000 $0.0704	Buy Now
Panasonic Electronic Components ERJ-P6WF4700V RES SMD 470 OHM 1% 1/2W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-P6WF4700V	Cut Tape	7,288		1	1 $0.49 10 $0.266 100 $0.1624 1000 $0.11163 10000 $0.11163	Buy Now
	ERJ-P6WF4700V	Digi-Reel	7,288		1	1 $0.49 10 $0.266 100 $0.1624 1000 $0.11163 10000 $0.11163	Buy Now
	ERJ-P6WF4700V	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.08612	Buy Now
TTI	ERJ-P6WF4700V	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.082	Buy Now
New Advantage Corporation	ERJ-P6WF4700V		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.1234	Buy Now
Panasonic Electronic Components ERJ-P6WF2700V RES SMD 270 OHM 1% 1/2W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-P6WF2700V	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.08641	Buy Now
	ERJ-P6WF2700V	Cut Tape	5,000		1	1 $0.49 10 $0.269 100 $0.1648 1000 $0.11291 10000 $0.11291	Buy Now
	ERJ-P6WF2700V	Digi-Reel	5,000		1	1 $0.49 10 $0.269 100 $0.1648 1000 $0.11291 10000 $0.11291	Buy Now
Master Electronics	ERJ-P6WF2700V		5,000			1 - 10 - 100 - 1000 - 10000 $0.0882	Buy Now

Find more RJP6 price and stock on Findchips.com

RJP6 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
RJP6085DPK-00#T0	Renesas Technology	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P	Original	PDF
RJP6085DPN-00#T2	Renesas Technology	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-220AB	Original	PDF
RJP60D0DPE-00#J3	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 122W LDPAK	Original	PDF
RJP60D0DPK-00#T0	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-3P	Original	PDF
RJP60D0DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM	Original	PDF
RJP60D0DPP-M0#T2	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 35W TO-220FL	Original	PDF
RJP60F0DPE-00#J3	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 122W LDPAK	Original	PDF
RJP60F0DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM	Original	PDF
RJP60F4DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM	Original	PDF
RJP60F4DPQ-A0#T0	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A	Original	PDF
RJP60F5DPK-01#T0	Renesas Electronics America	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 80A 260.4W	Original	PDF
RJP60F5DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 45W TO-3PFM	Original	PDF
RJP60V0DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM	Original	PDF
RJP65T43DPQ-A0#T2	Renesas Electronics America	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT TRENCH 650V 60A TO247A	Original	PDF

RJP65T54DPM-A0#T2	Renesas Electronics America	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT TRENCH 650V 60A TO-3PFP	Original	PDF

RJP6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	PDF	RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A impeda9044
Untitled Abstract: No abstract text available Text: Datasheet RJP65S03DWT / RJP65S03DWA 650V - 30A - IGBT Application: Inverter R07DS0820EJ0200 Rev.2.00 Oct 09, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Tc = 25°C) • High speed Switching	Original	PDF	RJP65S03DWT RJP65S03DWA R07DS0820EJ0200 RJP65S03DWT-80 RJP65S03DWA-80
Untitled Abstract: No abstract text available Text: Datasheet RJP65S04DWT / RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0200 Rev.2.00 Oct 09, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • High speed Switching	Original	PDF	RJP65S04DWT RJP65S04DWA R07DS0821EJ0200 RJP65S04DWT-80 RJP65S04DWA-80
rjp60d Abstract: RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPK R07DS0166EJ0100 PRSS0004ZE-A temperature9044 rjp60d RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP65S05DWT/RJP65S05DWA 650V - 75A - IGBT Application: Inverter R07DS0822EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C)  High speed Switching	Original	PDF	RJP65S05DWT/RJP65S05DWA R07DS0822EJ0002 RJP65S05DWT-80 RJP65S05DWA-80
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)	Original	PDF	RJP6016JPE AEC-Q101 R07DS0878EJ0100 PRSS0004AE-B
rjp60d Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	PDF	RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A rjp60d
RJP63F3 Abstract: RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63 R07DS0321EJ0200 Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0321EJ0200 Rev.2.00 May 26, 2011 Features • • • • • Trench gate and thin wafer technology G6H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ	Original	PDF	RJP63F3DPP-M0 O-220FL R07DS0321EJ0200 PRSS0003AF-A) O-220FL) RJP63F3 RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63
RJP60V0DPM Abstract: No abstract text available Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A RJP60V0DPM
rjp60d Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60V0DPM-80 R07DS1036EJ0100 PRSS0003ZD-A
RJP63k2 Abstract: RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ	Original	PDF	RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B Junctio9044
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B

Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP65S04DWT/RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed Switching	Original	PDF	RJP65S04DWT/RJP65S04DWA R07DS0821EJ0002 RJP65S04DWT-80 RJP65S04DWA-80
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP65S07DWT/RJP65S07DWA 650V - 150A - IGBT Application: Inverter R07DS0824EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed Switching	Original	PDF	RJP65S07DWT/RJP65S07DWA R07DS0824EJ0002 RJP65S07DWT-80 RJP65S07DWA-80
RJP60F0DPE Abstract: No abstract text available Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B RJP60F0DPE
RJP60F4DPQ-A0 Abstract: No abstract text available Text: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F4DPQ-A0 R07DS0675EJ0100 PRSS0003ZH-A O-247A) RJP60F4DPQ-A0
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ	Original	PDF	RJP63K2DPP-M0 R07DS0468EJ0200 O-220FL PRSS0003AF-A) O-220FL)
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60V0DPM R07DS0669EJ0200 PRSS0003ZA-A therma2886-9022/9044
RJP63k2 Abstract: RJP63K rjp63 RJP63K2DPK-M0 35A6 Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ	Original	PDF	RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 35A6
rjp60d0dpp Abstract: RJP60D0DPP-M0 Text: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) rjp60d0dpp RJP60D0DPP-M0

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RJP6 Result Highlights (5)

RJP6 Price and Stock

Panasonic Electronic Components ERJ-P6WF1000V

Panasonic Electronic Components ERJ-P6WJ120V

Panasonic Electronic Components ERJ-P6WJ1R8V

Panasonic Electronic Components ERJ-P6WF4700V

Panasonic Electronic Components ERJ-P6WF2700V

RJP6 Datasheets (15)

RJP6 Datasheets Context Search

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rjp60d

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rjp60d

RJP63F3

RJP60V0DPM

rjp60d

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RJP63k2

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RJP60F0DPE

RJP60F4DPQ-A0

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RJP63k2

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