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    RJP63F3

    Abstract: RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63 R07DS0321EJ0200
    Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0321EJ0200 Rev.2.00 May 26, 2011 Features • • • • • Trench gate and thin wafer technology G6H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ


    Original     		RJP63F3DPP-M0 O-220FL R07DS0321EJ0200 PRSS0003AF-A) O-220FL) RJP63F3 RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63 PDF

    R07DS0321EJ0200

    Abstract: RJP63F3DPP-M0
    Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0321EJ0200 Rev.2.00 May 26, 2011 Features • • • • • Trench gate and thin wafer technology G6H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ


    Original     		RJP63F3DPP-M0 R07DS0321EJ0200 O-220FL PRSS0003AF-A) O-220FL) R07DS0321EJ0200 RJP63F3DPP-M0 PDF