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    RJP63K2DPK Search Results

    RJP63K2DPK Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJP63K2DPK-M0#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    RJP63K2DPK Price and Stock

    Rochester Electronics LLC RJP63K2DPK-M2-T0

    DISCTRETE / POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP63K2DPK-M2-T0 Bulk 39
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    • 100 $7.8
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    Renesas Electronics Corporation RJP63K2DPK-M2#T0

    RJP63K2DPK-M2#T0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJP63K2DPK-M2#T0 13,082 41
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    • 100 $8.8125
    • 1000 $7.975
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    Rochester Electronics RJP63K2DPK-M2#T0 13,082 1
    • 1 $7.5
    • 10 $7.5
    • 100 $7.05
    • 1000 $6.38
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    RJP63K2DPK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk PDF

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 35A6
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 35A6 PDF