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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPP-M0 R07DS0468EJ0200 O-220FL PRSS0003AF-A) O-220FL) PDF

    RJP63k2

    Abstract: rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2
    Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPP-M0 O-220FL R07DS0468EJ0200 PRSS0003AF-A) O-220FL) RJP63k2 rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2 PDF