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    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk PDF

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 35A6
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 35A6 PDF