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    EUDYNA Search Results

    EUDYNA Datasheets (498)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AG303-86 Eudyna Devices InGaP HBT Gain Block Original PDF
    AG303-86PCB Eudyna Devices InGaP HBT Gain Block Original PDF
    DCS1800 Eudyna Devices Quad-band Antenna Switch Module Original PDF
    EGN030MK Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN045MK Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN21A045IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN21A180IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN26A030MK Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN26A180IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN35A030MK Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN35A090IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN35A180IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EMC21L1004GN Eudyna Devices High Voltage - High Power GaN-HEMT Power Amplifier Module Original PDF
    EMM5068VU Eudyna Devices X-Band Power Amplifier MMIC Original PDF
    EMM5206LP Eudyna Devices K Band Oscillator MMIC Original PDF
    EMM5317ZW Eudyna Devices Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications Original PDF
    EMM5322ZU Eudyna Devices Double Pole Double Throw GaAs PHEMT Switch 0.1 - 6 GHz Original PDF
    EMM5328ZW Eudyna Devices Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications Original PDF
    EMM5832VU Eudyna Devices K-Band Power Amplifier MMIC Original PDF
    EMM5834X Eudyna Devices Ku / K-Band Power Amplifier MMIC Original PDF
    ...

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    EGN26A180IV

    Abstract: Eudyna Devices EGN26A180
    Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability


    Original     		PDF ES/EGN26A180IV EGN26A180IV Eudyna Devices EGN26A180

    GaN amplifier

    Abstract: EGN35A180IV
    Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability


    Original     		PDF ES/EGN35A180IV GaN amplifier EGN35A180IV

    hpa L-band

    Abstract: EGN21A180IV
    Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A180IV 45dBm 2200MHz EGN21A180IV Symb004 hpa L-band

    EGN26C030MK

    Abstract: No abstract text available
    Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 60GHz EGN26C030MK -j100 EGN26C030MK

    EGNC105MK

    Abstract: No abstract text available
    Text: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 51dBm EGNC105MK -j100 EGNC105MK

    EUDYNA

    Abstract: No abstract text available
    Text: EGNB070MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ P3dB ・High Efficiency: 70%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNB070MK -j100 EUDYNA

    Untitled

    Abstract: No abstract text available
    Text: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNB045MK

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C

    EGN090MK

    Abstract: 679-10 dsa0044095
    Text: Eudyna GaN-HEMT 90W Preliminary HS/EGN090MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51.0dBm typ. @ P3dB ・High Efficiency: 65%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=900MHz ・Proven Reliability


    Original     		PDF HS/EGN090MK 900MHz EGN090MK 679-10 dsa0044095

    EGN030MK

    Abstract: Eudyna EGN030MK High Power GaN-HEMT EUDYNA
    Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN030MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 46.5dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 12dB(typ.) @ f=2700MHz •Broad Frequency Range : 800 to 2800MHz


    Original     		PDF ES/EGN030MK 2700MHz 2800MHz EGN030MK Eudyna EGN030MK High Power GaN-HEMT EUDYNA

    EGN26A090IV

    Abstract: EUDYNA EGN26A090
    Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability


    Original     		PDF ES/EGN26A090IV EGN26A090IV EUDYNA EGN26A090

    GaN amplifier

    Abstract: EUDYNA
    Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability


    Original     		PDF ES/EGN26A030MK GaN amplifier EUDYNA

    Untitled

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability


    Original     		PDF ES/EGN35A030MK VDS-16

    Untitled

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability


    Original     		PDF ES/EGN35A090IV

    EGN21A045IV

    Abstract: hpa L-band 27 31 GHz HPA GaN amplifier
    Text: Eudyna GaN-HEMT 45W Preliminary EGN21A045IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=39dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A045IV 39dBm 2200MHz EGN21A045IV hpa L-band 27 31 GHz HPA GaN amplifier

    Untitled

    Abstract: No abstract text available
    Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C020MK -j100

    Untitled

    Abstract: No abstract text available
    Text: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C030MK -j100

    Untitled

    Abstract: No abstract text available
    Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 60GHz EGN26C020MK -j100

    2S110

    Abstract: GRM188B11H102KA01D
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D

    Untitled

    Abstract: No abstract text available
    Text: EGNB010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNB010MK

    EKZE101

    Abstract: No abstract text available
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101

    EGN010MK

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 10W Preliminary ES/EGN010MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 41.0dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 13dB(typ.) @ f=3500MHz •Broad Frequency Range : 800 to 3700MHz


    Original     		PDF ES/EGN010MK 3500MHz 3700MHz EGN010MK

    EGN010MK

    Abstract: 6 ghz amplifier 10w
    Text: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz


    Original     		PDF EGN010MK 3500MHz 3700MHz EGN010MK 6 ghz amplifier 10w

    27 31 GHz HPA

    Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
    Text: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A090IV 42dBm 2200MHz EGN21A090IV 27 31 GHz HPA hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090