Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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CS3376C
Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
GRM188B11H102KA01D
ATC100B100JW500
risho
GRM188B31H104KA92D
EGN35C070I2D
GSC364-HYB3500
JESD22-A114
MCR03EZPJ101
MCR18EZPJ101
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BD5452A
Abstract: BD5452AMUV marking 2P diode 2PIN LCC3225T2R2MR VQFN032V5050
Text: BD5452AMUV Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc.
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BD5452AMUV
BD5452AMUV
BD5452A
marking 2P diode 2PIN
LCC3225T2R2MR
VQFN032V5050
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GRM42-6CH
Abstract: GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM40C0G103J50
GRM1882C1H8R0DZ01
GRM188F11E104Z
GRM39F104Z
GRM39X7R473K25
GRM1885C1H391JA01J
GRM39U2J100D
GRM40X7R104K25
GRM40B106K
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3072 rohm
Abstract: No abstract text available
Text: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)
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BD5452AMUV
BD5452AMUV
3072 rohm
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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Untitled
Abstract: No abstract text available
Text: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)
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BD5452AMUV
VQFN032V5050
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EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C105I2D
14GHz
14GHz
/-10MHz
45dBm
EKZE101
GaN amplifier 100W
GRM55ER72A475K
grm188b11h102ka01d
105w
ATC100B
Soshin
JESD22-A114
MCR18
TZY2Z010A001
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chn 513
Abstract: chn 135 GRM188B11H102KA01D CHN 219 GRM188B31H104KA92D grm188B31E105K RK73B1ETTD104J CHN 136 chn 238 RK73B1ETTD121J
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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78K0/Ix2LED
78K0/IY2
78K0/IA2
78K0/IB2
U19666JJ1V0AN001
U19666JJ1V0AN
chn 513
chn 135
GRM188B11H102KA01D
CHN 219
GRM188B31H104KA92D
grm188B31E105K
RK73B1ETTD104J
CHN 136
chn 238
RK73B1ETTD121J
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Untitled
Abstract: No abstract text available
Text: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)
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BD5452AMUV
VQFN032V5050
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Untitled
Abstract: No abstract text available
Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
25deg
/-10MHz
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Untitled
Abstract: No abstract text available
Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
25deg
/-10MHz
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GRM188F11E104ZA01D
Abstract: AN3247 C53l GRM188B11H103KA01D r17n C61N C42L R46n C51N SPIGen for parallel port
Text: Transportation and Standard Product Group Analog Products Division PACKING LIST - KIT CONTENTS KIT18730EPEVBE 1.15V/2.4V 2-CH DC to DC Converters with 3 Low Dropout Regulators QUANTITY 1 REVISION CD - ROM Documentation Package for KIT18730EPEVBE Notice Instructions
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KIT18730EPEVBE
MPC18730
AN3247
GRM188F11E104ZA01D
C53l
GRM188B11H103KA01D
r17n
C61N
C42L
R46n
C51N
SPIGen for parallel port
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CS3376C
Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
EGN35C070I2D
CS-3376C
TZY2Z010A001
GRM188B11H102KA01D
GSC364
HYB3500
JESD22-A114
MCR18EZPJ101
GRM188B11h
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mar 827
Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
/-10MHz
mar 827
210w AF Power Amplifier
CS3376C
ATC100B
JESD22-A114
TZY2Z010A001
MURATA GRM55ER72A475K
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