hpa L-band
Abstract: EGN21A180IV
Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A180IV
45dBm
2200MHz
EGN21A180IV
Symb004
hpa L-band
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MAX40003
Abstract: Logarithmic Amplifier detector 25c2625 MAX4003 MAX4003EBL-T MAX4003ETA-T MAX4003EUA MO229
Text: 19-2620; Rev 1; 3/03 100MHz to 2500MHz, 45dB RF Detector in a UCSP Features ♦ Complete RF Detector ♦ Frequency Range from 100MHz to 2500MHz ♦ Input Range of -58dBV to -13dBV -45dBm to 0dBm into 50Ω ♦ Fast Response: 70ns in 10dB Steps ♦ Low-Current Consumption: 5.9mA at VCC = 3.0V
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100MHz
2500MHz,
2500MHz
-58dBV
-13dBV
-45dBm
MAX4003EBL-T
MAX4003EUA
MAX4003ETA-T
MAX40003
Logarithmic Amplifier detector
25c2625
MAX4003
MAX4003EBL-T
MAX4003ETA-T
MAX4003EUA
MO229
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Untitled
Abstract: No abstract text available
Text: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band 34dB typical small signal gain GaN HFET RFW1G33H40-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.
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20MHz
1000MHz
45dBm
RFW1G33H40-28
DP-75
RFW1G33H40-28
1000MHz.
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Untitled
Abstract: No abstract text available
Text: SMC2933L6012R High Voltage - High Power GaN-HEMT Pallet Amplifier FEATURES • • • • • High Voltage Operation : VDS=50V High Power : 700W typ. @ Pin=31.6W (45dBm) High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) Power Gain : 13.5dB(typ.) Impedance Matched Zin/Zout = 50 ohm
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SMC2933L6012R
45dBm)
SMC2933L6012R
300usec
25deg
200msec,
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ATF-501P8
Abstract: R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM
Text: ATF-501P8 1900MHz High Linearity Amplifier Application Note 5021 Description Avago Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited as a base station transmit
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ATF-501P8
1900MHz
ATF-501P8
45dBm
com/pdf/AN-0002
ATF-501P8.
5989-0241EN
R8121
LL1608-FS47NJ
0402CG189C9B200
BCV62B
ML200D
350LFM
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AP112
Abstract: ap112 rfhic AP112 SOT89 TILT choke FP-85 812 SOT89
Text: MMIC AP112 Product Features Applications • SOT89 Type Package • High IP3, High Gain • No matching circuit needed • 3MHz-2.5GHz • -73 dBc CTB, 135Channels, +30dBmV/ch, Single • -57 dBc CSO, 135Channels, +30dBmV/ch, Single • -79dBc CTB, 8Channels, +45dBmV/ch, Single
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AP112
135Channels,
30dBmV/ch,
-79dBc
45dBmV/ch,
-57dBc
100Years3
AP112
ap112 rfhic
AP112 SOT89
TILT choke
FP-85
812 SOT89
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Untitled
Abstract: No abstract text available
Text: MMIC AP112 Product Features Application • SOT89 Type Package • High IP3, High Gain • No matching circuit needed • 3MHz-2.5GHz • -73 dBc CTB, 135Channels, +30dBmV/ch, Single • -57 dBc CSO, 135Channels, +30dBmV/ch, Single • -79dBc CTB, 8Channels, +45dBmV/ch, Single
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AP112
135Channels,
30dBmV/ch,
-79dBc
45dBmV/ch,
-57dBc
100Years3
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64DPCH
Abstract: E4418B E4438C e4445a
Text: HPA Module RGP2036-120 Product Features Application • Operating BW 400MHz • WCDMA 2FA, 45dBm • Solid state GaN FET amplifier • Pallet type HPA, Small and light weight • Excellent Power expansion • 50 Ohm Input/Output impedance • High reliability and ruggedness
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RGP2036-120
400MHz
45dBm
64DPCH
E4418B
E4438C
e4445a
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R8121
Abstract: ATF-501P8 0402CG189C9B200 ATF501P8 BCV62B ML200D low noise high frequency HEMT from agilent pHEMT transistor MTBF 0603CG100J9B20
Text: ATF-501P8 Application Note ATF-501P8 Applications Information Description Agilent Technologies ATF501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited
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ATF-501P8
ATF501P8
45dBm
com/products/data/appnotes/an178
ATF-54143
com/pdf/AN-0002
R8121
0402CG189C9B200
BCV62B
ML200D
low noise high frequency HEMT from agilent
pHEMT transistor MTBF
0603CG100J9B20
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Untitled
Abstract: No abstract text available
Text: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.5 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm
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TGA2806-SM
40MHz
45dBm
TGA2806-SM
1000MHz.
TGA2806-SM,
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Untitled
Abstract: No abstract text available
Text: Wideband Power Amplifier RFW1G33H40-28 Product Features Application • Operation across 20MHz to 1000MHz • 45dBm minimum Psat through all band • 34dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.
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RFW1G33H40-28
20MHz
1000MHz
45dBm
DP-75
RFW1G33H40-28
1000MHz.
30dBm
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AP176
Abstract: TIA-900-10
Text: Coaxial RF Instrument Amplifier 50Ω TIA-900-10 High Power 100 to 900 MHz Features • instrument model with built-in power supply, 110V operation • high power output at 3.5dB compression, 45dBm typ. • high gain, 34 dB typ. • high reverse isolation, 80 dB typ.
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TIA-900-10
45dBm
AP176
AP176
TIA-900-10
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ml marking sot 89
Abstract: bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P P0120004P RR0816 IDS400
Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120004P
45dBm
OT-89
17GHz
KP024J
P0120004P
ml marking sot 89
bc 339
DC 8881
ml marking
ISO-14001
KP024J
P0120003P
RR0816
IDS400
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RFW1G33H40-28
Abstract: No abstract text available
Text: Wideband Power Amplifier RFW1G33H40-28 Product Features Application • Operation across 20MHz to 1000MHz • 45dBm minimum Psat through all band • 34dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.
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RFW1G33H40-28
20MHz
1000MHz
45dBm
DP-75
RFW1G33H40-28
1000MHz.
30dBm
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ADTL118-75
Abstract: ETC1-1-13
Text: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.7 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm
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TGA2806-SM
40MHz
45dBm
TGA2806-SM
1000MHz.
TGA2806-SM,
ADTL118-75
ETC1-1-13
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ER 900
Abstract: AP176 TIA-900-10
Text: NON-CATALOG Coaxial RF Instrument Amplifier 50Ω TIA-900-10 High Power 100 to 900 MHz Features • instrument model with built-in power supply, 110V operation • high power output at 3.5dB compression, 45dBm typ. • high gain, 34 dB typ. • high reverse isolation, 80 dB typ.
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TIA-900-10
45dBm
AP176
ER 900
AP176
TIA-900-10
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ECP050D-500
Abstract: No abstract text available
Text: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters
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ECP050
2300MHz
28dBm
45dBm
PCS/CDMA2000/IMT2000/UMTS
QFN-16
ECP050
ECP050G
ECP050G-500
ECP050G-1000
ECP050D-500
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Untitled
Abstract: No abstract text available
Text: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.5 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm
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TGA2806-SM
40MHz
45dBm
TGA2806-SM
1000MHz.
TGA2806-SM,
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Untitled
Abstract: No abstract text available
Text: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,
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HWF1686YC
123456789ABC7DEF7
30dBm
45dBm
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SGN2933-600D-R
Abstract: No abstract text available
Text: SGN2933-600D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 700W typ. @ Pin=31.6W (45dBm) •High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) •Broad Band: 2.9 to 3.3GHz • 50 ohm Matched Pair
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SGN2933-600D-R
45dBm)
SGN2933-600D-R
200msec,
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Untitled
Abstract: No abstract text available
Text: SGN2933-600D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 700W typ. @ Pin=31.6W (45dBm) •High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) •Broad Band: 2.9 to 3.3GHz • 50 ohm Matched Pair
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SGN2933-600D-R
45dBm)
SGN2933-600D-R
200msec,
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eudyna transistors catalog
Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028
Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120004P
45dBm
OT-89
P0120004P
eudyna transistors catalog
ISO-14001
KP024J
RR0816
marking c7 sot-89
SOT89 marking 1Ko
PIN DIAGRAM of ic 4028
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transformer 1459
Abstract: TTC-105N 470q
Text: REV. S ta tu s REVISION 0 2 / 1 0 / 0 0 TS Telecommunication Coupling Transform er A. Electrical Specifications @ 25° C 1. Pri Source Impedance; 6000 2. Sec Load Impedance; 470Q 3. Pri DC Current; 90mA MAX ( 1 - 3 ) 4. Operating Level; — 45dBm to +7dBm
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45dBm
30mADC
90mADC
600Hz,
300Hz
30mADC
1500Vrms
P-A1-11317
ACAD\TTC\A1113171
TTC-105N
transformer 1459
470q
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apd oc-3
Abstract: hitachi SAW Filter lightwave receiver hitachi core EE 20
Text: RCV5467 Preliminary OC-3 Receiver Description The RCV5667 is a lightwave receiver for OC-3. Features • InGaAs APD • High sensitivity: -45dBm • Operation at 155.52Mb/s (scrambled NRZ) at 1.3 |im or 1.55 |im wavelength • ECL1 OK interface • Clock recovery using SAW filter
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RCV5467
RCV5667
-45dBm
52Mb/s
apd oc-3
hitachi SAW Filter
lightwave receiver hitachi
core EE 20
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