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    Abstract: No abstract text available
    Text: EGNB010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNB010MK

    EGNB010MK

    Abstract: JESD22-A114 DSASW00347279
    Text: EGNB010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNB010MK EGNB010MK JESD22-A114 DSASW00347279