ZHL-03-5WF
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF 60 to 300 MHz Features • High power, +39dBm typ. • Low noise figure, 3 dB typ. • High IP3, +49 dBm typ. • Class A amplifier • Availabe with built-in fan with thermal shut-off Model No. Case Style Connectors
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ZHL-03-5WF
39dBm
ZHL-03-05WFX
CP641
ZHL-03-5WFX
ZHL-03-5WF
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EGN21A045IV
Abstract: hpa L-band 27 31 GHz HPA GaN amplifier
Text: Eudyna GaN-HEMT 45W Preliminary EGN21A045IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=39dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A045IV
39dBm
2200MHz
EGN21A045IV
hpa L-band
27 31 GHz HPA
GaN amplifier
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TA099-107-41-40
Abstract: No abstract text available
Text: TA099-107-41-40 PRE1_20040412 9.9 - 10.7 GHz 10W Amplifier FEATURES • • • • P-1dB: 39dBm Small Signal Gain: 42dB TTL Control Power Turn ON/OFF: 1ìS Bias Condition: 7A @ 12V DESCRIPTION The TA099-107-41-40 is a 10W power amplifier designed for high linearity applications in the 9.9 to
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TA099-107-41-40
39dBm
TA099-107-41-40
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FPD1500SOT89
Abstract: Toko inductor
Text: EB1500SOT89BB FPD1500SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 27dBm Output Power • 20dB Gain ¥ 0.7dB Noise Figure ¥ 39dBm OIP3 @ 15dBm Pout per tone ¥ Bias Vd = 5V, Id = 200mA, Vg = -0.5V ~ -0.7V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB1500SOT89BB
FPD1500SOT89
27dBm
39dBm
15dBm
200mA,
FPD1500SOT89;
1500m
30mil
LL1608
Toko inductor
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MMIC SOT 343 marking CODE
Abstract: MARKING CODE A1 SOT343 MGA-53543 MGA-53543-TR1G A004R MMIC marking code 132 GaAs pHEMT Low Noise MMIC Amplifier sot-343 MGA-53543-BLKG avago Date code character identifies month of manufacture
Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-53543 MGA-53543 5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343 SC70 Description This E-pHEMT RFIC is an easy-to-use power-efficient high linearity low noise amplifier built on
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MGA-53543
39dBm
45-6GHz,
OT343
V/54mA
39dBm,
MMIC SOT 343 marking CODE
MARKING CODE A1 SOT343
MGA-53543
MGA-53543-TR1G
A004R
MMIC marking code 132
GaAs pHEMT Low Noise MMIC Amplifier sot-343
MGA-53543-BLKG
avago Date code character identifies month of manufacture
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Untitled
Abstract: No abstract text available
Text: Excelics EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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39dBm
EIA1616-8P
EIA1616-8P
720mA
38dBm
175oC
-65/175oC
6240mA
120mA
150oC
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c.d.m. technology tdk
Abstract: 131-6 wj 70 AH22S ferrite core tdk h5c2 1507 SOIC 8 AH22S-G AH22S-PCB ETC1-1-13 JESD22-A114 J-STD-020A
Text: AH22S High Dynamic Range CATV Amplifier Product Features Product Description • 50 – 1000 MHz • ±0.2 dB Gain Flatness • +25 dBm P1dB • -74 dBc CTB / CSO +39dBmV/channel, 77 channels Applications • CATV Head End Equipment • CATV Line Amplifiers
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AH22S
39dBmV/channel,
1-800-WJ1-4401
c.d.m. technology tdk
131-6 wj 70
AH22S
ferrite core tdk h5c2
1507 SOIC 8
AH22S-G
AH22S-PCB
ETC1-1-13
JESD22-A114
J-STD-020A
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EIA1414-8P
Abstract: No abstract text available
Text: Excelics EIA1414-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 8W Internally Matched Power FET • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1414-8P
39dBm
6240mA
720mA
120mA
38dBm
175oC
150oC
-65/150oC
EIA1414-8P
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EIA1616-8P
Abstract: No abstract text available
Text: Excelics EIA1616-8P PRELIMINARY DATA SHEET 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN
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EIA1616-8P
39dBm
6240mA
720mA
120mA
38dBm
175oC
150oC
-65/150oC
EIA1616-8P
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Untitled
Abstract: No abstract text available
Text: FLM7785-8D FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 26% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q
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FLM7785-8D
39dBm
-45dBc
28dBm
FLM7785-8D
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Untitled
Abstract: No abstract text available
Text: Filmali FLM3742-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P1dB = 39dBm Typ. High Gain: G1dB = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM3742-8C
39dBm
FLM3742-8C
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Untitled
Abstract: No abstract text available
Text: FLM3742-8E m frT C II r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-8E
UJ11bU
39dBm
-45dBc
28dBm
FLM3742-8E
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FLM7177-8C
Abstract: No abstract text available
Text: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7177-8C
39dBm
7177-8C
FLM7177-8C
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7177-8C
Abstract: FLM7177-8C/D
Text: FLM7177-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
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FLM7177-8C
39dBm
FLM7177-8C
7177-8C
FLM7177-8C/D
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Untitled
Abstract: No abstract text available
Text: F|,çP,. FLM6472-8C rU JI I j U Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iar|H = 29% (Typ.) Broad B a nd a6 d4 - 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-8C
39dBm
FLM6472-8C
2200mA
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FLM5359-8C
Abstract: No abstract text available
Text: FLM5359-8C fujTtsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 39dBm Typ. • High Gain: G -j^B = 9.5dB (Typ.) • • • • High PAE: r iadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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39dBm
FLM5359-8C
FLM5359-8C
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FLM4450-8C
Abstract: FLM4450-4C
Text: FLM4450-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM4450-8C
39dBm
FLM4450-4C
FLM4450-8C
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i80m
Abstract: FLM7785-8C
Text: F |rUJI,çPI ,U. FLM7785-8C j Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 6.0dB (Typ.) High PAE: r iadd = 27% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q
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FLM7785-8C
39dBm
FLM7785-8C
i80m
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FLM4450-8C
Abstract: No abstract text available
Text: FLM4450-8C FI if m - i I I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39dBm Typ. • • • • • High Gain: G -j^B = 10dB (Typ.) High PAE: r iadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-8C
39dBm
FLM4450-4C
FLM4450-8C
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FLM7177-8D
Abstract: i80m
Text: FLM7177-8D FimTÇII rU JI Ij U Internally M a tc h e d P o w e r G aA s F E T s FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz
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FLM7177-8D
39dBm
-45dBc
28dBm
FLM7177-8D
7177-8D
i80m
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GaAs FETs
Abstract: FLM4450-8E
Text: F| .fjW-,. J FLM4450-8E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 10.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-8E
39dBm
-45dBc
28dBm
4450-8E
GaAs FETs
FLM4450-8E
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Untitled
Abstract: No abstract text available
Text: FLM3742-8C Fl INTCII J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P1dB = 39dBm Typ. High Gain: G1dB = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM3742-8C
39dBm
FLM3742-8C
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FLM3742-8E
Abstract: No abstract text available
Text: pi itrrci I FLM3742-8E Internally M a tc h e d P o w e r G aA s F E T s *" ^ FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -^ g = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-8E
39dBm
-45dBc
28dBm
FLM3742-8E
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Untitled
Abstract: No abstract text available
Text: F, , FLM4450-8E J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 32% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-8E
39dBm
-45dBc
28dBm
Ambi148
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