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    3N80 Search Results

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    3N80 Price and Stock

    STMicroelectronics STD3N80K5

    MOSFET N-CH 800V 2.5A DPAK
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    DigiKey STD3N80K5 Digi-Reel 5,369 1
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    Mouser Electronics STD3N80K5 2,484
    • 1 $1.84
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    Newark STD3N80K5 Cut Tape 6,879 1
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    STMicroelectronics STD3N80K5 2,484 1
    • 1 $1.76
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    Avnet Silica STD3N80K5 15 Weeks 2,500
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    Chip1Stop STD3N80K5 Cut Tape 2,490
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    Win Source Electronics STD3N80K5 40,000
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    STMicroelectronics STP3N80K5

    MOSFET N-CH 800V 2.5A TO220
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    DigiKey STP3N80K5 Tube 1,841 1
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    Avnet Americas STP3N80K5 Bulk 15 Weeks 1
    • 1 $1.76
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    STP3N80K5 Tube 14 Weeks 2,000
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    Mouser Electronics STP3N80K5 694
    • 1 $2.02
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    Newark STP3N80K5 Bulk 130 1
    • 1 $0.864
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    Avnet Silica STP3N80K5 1,800 38 Weeks 50
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    EBV Elektronik STP3N80K5 38 Weeks 50
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    Alpha & Omega Semiconductor AOD3N80

    MOSFET N-CH 800V 2.8A TO252
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    DigiKey AOD3N80 Digi-Reel 1,714 1
    • 1 $2.04
    • 10 $1.301
    • 100 $2.04
    • 1000 $0.64121
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    AOD3N80 Cut Tape 1,714 1
    • 1 $2.04
    • 10 $1.301
    • 100 $2.04
    • 1000 $0.64121
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    STMicroelectronics STF3N80K5

    MOSFET N-CH 800V 2.5A TO220FP
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    DigiKey STF3N80K5 Tube 1,218 1
    • 1 $2.57
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    • 1000 $0.84062
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    Avnet Americas STF3N80K5 Tube 14 Weeks 2,000
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    TME STF3N80K5 1
    • 1 $1.39
    • 10 $1.26
    • 100 $1.11
    • 1000 $0.86
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    Avnet Silica STF3N80K5 15 Weeks 50
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    EBV Elektronik STF3N80K5 15 Weeks 50
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    STMicroelectronics STP23N80K5

    MOSFET N-CH 800V 16A TO220-3
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    DigiKey STP23N80K5 Tube 1,105 1
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    Avnet Americas STP23N80K5 Tube 14 Weeks 1,000
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    Mouser Electronics STP23N80K5 965
    • 1 $5.29
    • 10 $5.13
    • 100 $2.79
    • 1000 $2.47
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    STMicroelectronics STP23N80K5 965 1
    • 1 $5.18
    • 10 $5.03
    • 100 $2.73
    • 1000 $2.43
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    Avnet Silica STP23N80K5 2,850 15 Weeks 50
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    Chip1Stop STP23N80K5 Tube 30
    • 1 $1.14
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    3N80 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N80 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N80 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    3N80 Unknown Cross Reference Datasheet Scan PDF

    3N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3n80

    Abstract: No abstract text available
    Text: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800


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    O-220 3n80 PDF

    3N80G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    800Volts 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TF2-T 3N80G-at QW-R502-283 3N80G PDF

    3n80

    Abstract: 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


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    3N80L 3N80G 3N80-TA3-T 3N80-TF3-T QW-R502-283 3n80 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds PDF

    "VDSS 800V" mosfet

    Abstract: 3N80
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T O-220 O-220F O-22ues QW-R502-283 "VDSS 800V" mosfet 3N80 PDF

    3N80

    Abstract: utc 3n80l ULTRA FAST diode 400v 5a transistor 3N80 IGS TECHNOLOGIES MOSFET 400V TO-220 MOSFET 800V 3A 25V 1A power MOSFET TO-220 3n80 rds 400v 3a ultra fast recovery diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


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    3N80L 3N80G 3N80-TA3-T 3N80-TF3-T QW-R502-283 3N80 utc 3n80l ULTRA FAST diode 400v 5a transistor 3N80 IGS TECHNOLOGIES MOSFET 400V TO-220 MOSFET 800V 3A 25V 1A power MOSFET TO-220 3n80 rds 400v 3a ultra fast recovery diode PDF

    3N80

    Abstract: to-220 weight
    Text: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800


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    O-220 3N80 to-220 weight PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T QW-R502-283 PDF

    utc 3n80l

    Abstract: 3n80 3N80G 3N80L-TF1-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    800Volts 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TM3-T 3N80G-TM3-T 3N80L-TN3-T utc 3n80l 3n80 3N80G PDF

    3n80

    Abstract: No abstract text available
    Text: 3VD329800YL 3VD329800YL 高压MOSFET芯片 描述 ¾ 3VD329800YL为采用硅外延工艺制造的N沟道增强型 800V高压MOS功率场效应晶体管; ¾ 先进的高压分压终止环结构; 3 1 ¾ 较高的雪崩能量; ¾ 漏源二极管恢复时间快;


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    3VD329800YL 3VD329800YL 3VD329800YLN 800VMOS O-220, X586m O-220 3n80 PDF

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS PDF

    1N80

    Abstract: utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


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    O-220 O-220F O-220F1 O-252 QW-R502-491 1N80 utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power PDF

    3N80C

    Abstract: FQPF*3N80C DATE CODE FAIRCHILD
    Text: TM 3N80C/3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP3N80C/FQPF3N80C O-220 FQPF3N80C O-220F-3 FQPF3N80CYDTU 3N80C FQPF*3N80C DATE CODE FAIRCHILD PDF

    Untitled

    Abstract: No abstract text available
    Text: 3VD329800YL 3VD329800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD329800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ 3 1 Advanced termination scheme to provide enhanced


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    3VD329800YL 3VD329800YL O-220 24mmtion PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N80K5, 3N80K5, 3N80K5, 3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB Order codes 3 VDS RDS on max ID PTOT 1 3N80K5


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    STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 O-220FP, O-220 STD3N80K5 STF3N80K5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N80K5, 3N80K5, 3N80K5, 3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes 3 VDS RDS on max ID PTOT 1 3N80K5


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    STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 O-220FP, O-220 STD3N80K5 STF3N80K5 PDF

    P3N80

    Abstract: 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N75 M TM 3N80 M T P 3N 75 M T P 3N 80 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S P ow er FETs are designed fo r high vo ltag e , high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regu la to rs,


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    MTM/MTP3N75, P3N80 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200 PDF

    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


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    DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    3n80a

    Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 3N80, IXTP3N90, 3N80, IXTM3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. 3N80 3N80 IXTP3N90 IXTM3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)


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    4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 O-220 3n80a 3n80 3N90 IXTM3N80 3N90R L015A PDF

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Text: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


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    DIP-14 DIP-G14 300atthe\ 100PCEN G1N25. 1N100 2N100 3N100 5N100 2N25 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    3n80a

    Abstract: IXTM3N90
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 3N80, IXTP3N90, 3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po


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    4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 ELECTRIC420 3n80a PDF

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


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