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    3N90 Price and Stock

    IXYS Corporation IXFH13N90

    MOSFET N-CH 900V 13A TO247AD
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    DigiKey IXFH13N90 Tube 30
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    Mouser Electronics IXFH13N90
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    IXYS Corporation IXTP03N90P

    MOSFET N-CH TO220AB
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    onsemi FQPF3N90_NL

    MOSFET N-CH 900V 2.1A TO220F
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    IXYS Corporation IXTY03N90PHV

    MOSFET N-CH TO252AA
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    Taiwan Semiconductor TSM3N90CI-C0G

    MOSFET N-CH 900V 2.5A ITO220AB
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    Find more 3N90 price and stock on Findchips.com

    3N90 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N90 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N90 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N90 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N90 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N90 Sprague Semiconductor Data Book 1977 Scan PDF

    3N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N90

    Abstract: 3N90L 400v 3a ultra fast recovery diode MOSFET 400V TO-220 MOSFET 900V TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R QW-R502-290 3N90 3N90L 400v 3a ultra fast recovery diode MOSFET 400V TO-220 MOSFET 900V TO-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90Z Preliminary Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90Z provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90Z 3N90Z 3N90ZL-TF1-T 3N90ZG-TF1-T 2013at QW-R502-913

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90-E Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90-E 3N90-E 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TN3-R 3N90G-TN3-R O-251 O-251S2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90L-TA3-T 3N90G-TA3-T 3N90L-TC3-T 3N90G-TC3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TF1-T 3N90G-TF1-T 3N90L-TF2-T 3N90G-TF2-T

    3n90

    Abstract: 3N90L
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R 3N90L-TM3-T 3N90G-TM3-T 3n90 3N90L

    3N90

    Abstract: MOSFET 900V TO-220 3N90-TF3-T 400v 3a ultra fast recovery diode MOSFET 400V TO-220 3N90-TA3-T TF 3N90
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Preliminary Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 3N90 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF O-220 O-220F 3N90L 3N90G 3N90-TA3-T 3N90-TF3t QW-R502-290 3N90 MOSFET 900V TO-220 3N90-TF3-T 400v 3a ultra fast recovery diode MOSFET 400V TO-220 3N90-TA3-T TF 3N90

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    ind0603

    Abstract: ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8
    Text: Application Note 78 ML2722 & ML2751 Evaluation Design OVERVIEW FEATURES The ML2722/ML2751 evaluation design demonstrates the performance, simplicity and size of a transceiver for two application areas. First is a Direct Sequence Spread Spectrum DSSS at 1.536M chips per second and a


    Original     		PDF ML2722 ML2751 ML2722/ML2751 ML2722 ML2751 928MHzoration. AN78-01 ind0603 ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8

    2SK752

    Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
    Text: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777


    Original     		PDF 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 NEC diode 3N125 3N126 2SK791 3N105 3N134 82230

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TELED.YNE components 2flE D • öT17tiQ5 NPN/PNP DUAL EMinER CHOPPER BI-POLAR TRANSISTORS DGObS^a 3 T_B I T -3 '7- a 3 3N62 to 3N136 GEOMETRY 460 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANTX-V * LOW OFFSET VOUAGE TO 30 mV(PNP)/10mV(NPN) HIGH BV 6 0 VOUS


    OCR Scan     		PDF T17tiQ5 3N136 3N74-3N76) /10mV 3N119 3N120 3N121 3N123 3N129 3N130

    MOSFET 10n60

    Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
    Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)


    OCR Scan     		PDF 4bab22b IXTH10N60, IXTM10N60 55Q/0 IXTH10N60 O-247 300ns, MOSFET 10n60 10N60A ir 10n60 10N60 10N60R 3N90R

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    3n80a

    Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, 3N90, IXTM3N80, 3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. IXTP3N80 IXTM3N80 3N90 3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)


    OCR Scan     		PDF 4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 O-220 3n80a 3n80 3N90 IXTM3N80 3N90R L015A

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    6n60a

    Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
    Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		PDF IXTP6N60 IXTM6N60 IXTP6N60, Drain-Sour420 O-204 O-220 O-247 6n60a 6n60 600 volt n channel power mosfet

    2N4415

    Abstract: 3N107 3N91 2N4383 2N4385 3N90 4 pin dual-emitter 2N4414A dual-emitter 2N4412
    Text: Metal-Encased Silicon SEPT" Transistors These dual-emitter PNP silicon planar epitaxial transistors DUH - .„ I DUAL EMITTER C tD T ¿Erl ings, low offset voltages, low emitter capacitances and ex- TDAMCICTADC IKANM j IU K j cellent thermal characteristics.


    OCR Scan     		PDF 2N4415 IU-10 2N4415A 100mA 500mA 800mA 2N3724 2N3725 2N4013 2N4014 3N107 3N91 2N4383 2N4385 3N90 4 pin dual-emitter 2N4414A dual-emitter 2N4412

    3n80a

    Abstract: IXTM3N90
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, 3N90, IXTM3N80, 3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po


    OCR Scan     		PDF 4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 ELECTRIC420 3n80a

    3N74

    Abstract: 3n70 3N68 3n103
    Text: NPN/PNP DUAL EMITTK CHOPPER BI-POLAR TRANSISTORS 3N62 / „ to i 3N136 GEOMETRY 450 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANÎX-V ' ä S S E S i S S “ ,0 LOW rec(sat) 8 Ohms (typ) ELECTRICAL CHARACTERISTICS AT 25 JC FREE-AIR TEMPERATURE •Vk o ■vcao


    OCR Scan     		PDF 3N136 3N74-3N76) 3N68A* 3N915 3N74-3N76fAvailab 3N74 3n70 3N68 3n103