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    3n80

    Abstract: No abstract text available
    Text: 3VD329800YL 3VD329800YL 高压MOSFET芯片 描述 ¾ 3VD329800YL为采用硅外延工艺制造的N沟道增强型 800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 3 1 ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；


    Original     		3VD329800YL 3VD329800YL 3VD329800YLN 800VMOS O-220, X586m O-220 3n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3VD329800YL 3VD329800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD329800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ 3 1 Advanced termination scheme to provide enhanced


    Original     		3VD329800YL 3VD329800YL O-220 24mmtion PDF