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    IXTP3N80 Search Results

    IXTP3N80 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP3N80 IXYS High Voltage Power MOSFETs Scan PDF
    IXTP3N80 IXYS High Voltage Power MOSFETs Scan PDF
    IXTP3N80 Unknown FET Data Book Scan PDF
    IXTP3N80 Sharp 800 V, 3 A, sourse-drain diode Scan PDF
    IXTP3N80A IXYS High Voltage Power MOSFETs Scan PDF
    IXTP3N80A IXYS High Voltage Power MOSFETs Scan PDF
    IXTP3N80A Unknown FET Data Book Scan PDF

    IXTP3N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTP3N80 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		IXTP3N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTP3N80A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		IXTP3N80A PDF

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n PDF

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 PDF

    3n80a

    Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)


    OCR Scan     		4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 O-220 3n80a 3n80 3N90 IXTM3N80 3N90R L015A PDF

    3n80a

    Abstract: IXTM3N90
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po


    OCR Scan     		4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 ELECTRIC420 3n80a PDF

    IXTP4N50A

    Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
    Text: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80


    OCR Scan     		IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP4N50A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 PDF

    5n50

    Abstract: IXTP3N100A IXTP3N100 1800 IXYS IXTM15N80 IXTM15N80A IXTM20N55 IXTM25N45 IXTM25N45A LM3661TL-1.25
    Text: - 270 - t S s *± € * % %l T a=2 5'C f Vd s or Vd g (V) Vg s Id V g s th) Id s s * /CH * /CH (V) Ig s s Po (A) (W) max min (nA) Vg s (V) (uA) Vd s (V) Id («A) (V) (V) ft % 4# F Ds(on) Vd s Vg s 1Ê ( T a = 2 5 ‘C ) b(on) Ciss g fs Coss Crss ^ B m %


    OCR Scan     		IXTM15N80 T0-204 IXTM15N80A O-204 IXTM20N55 1XTM20N55A O-220 IXTP4N100A 5n50 IXTP3N100A IXTP3N100 1800 IXYS IXTM25N45 IXTM25N45A LM3661TL-1.25 PDF

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 PDF

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G PDF