IXTM3N90 Search Results

IXTM3N90 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTM3N90		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM3N90		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM3N90		Unknown	FET Data Book		Scan	PDF
IXTM3N90		Sharp	900 V, 3 A, sourse-drain diode		Scan	PDF
IXTM3N90A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM3N90A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM3N90A		Unknown	FET Data Book		Scan	PDF

IXTM3N90 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007	PDF
3n80a Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)	OCR Scan	4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 O-220 3n80a 3n80 3N90 IXTM3N80 3N90R L015A	PDF
3n80a Abstract: IXTM3N90 Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po	OCR Scan	4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 ELECTRIC420 3n80a	PDF
1xys Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80 Text: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (typ) (typ) (typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min /CH Vgs % '14 & F Ds(on) Vd s = or €	OCR Scan	IXTH12N50 O-247 IXTH12N50A IXTH15N70 UTH15N70A O-204 IKTM3N80A IXTM3N90 1xys IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH25N45 IXTH25N50A IXTH15N80	PDF
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95	PDF
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan		PDF
IXTM6N90A Abstract: No abstract text available Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T \| 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000	OCR Scan	IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A	PDF