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    VISHAY APPLICATION NOTE 129 Search Results

    VISHAY APPLICATION NOTE 129 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    VISHAY APPLICATION NOTE 129 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SAC387

    Abstract: NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387
    Text: VISHAY SILICONIX Power MOSFETs Application Note 914 "PowerPAK 1212-8", The Proven Automotive Package By Kandarp Pandya INTRODUCTION This application note presents useful information on the PowerPAK 1212-8 to facilitate SQE and design engineers. Vishay introduced the PowerPAK power MOSFET package


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    1990s AN825 17-May-10 SAC387 NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387 PDF

    vcnl4000 App

    Abstract: No abstract text available
    Text: VISHAY SEMICONDUCTORS Optoelectronics Application Note Designing VCNL4000 into an Application INTRODUCTION The VCNL4000 is a proximity sensor with an integrated ambient light sensor. It is the industry’s first optical sensor to combine an infrared emitter, PIN photodiode, ambient


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    VCNL4000 16-bit 11-Mar-11 vcnl4000 App PDF

    proximity sensor interfacing with microcontroller

    Abstract: VCNL4000 analog output Ambient light sensor proximity card Ambient Light Sensor distance measurement using ir mm ir proximity sensor circuit diagram light sensor VCNL4 infrared human motion detection sensor
    Text: VISHAY SEMICONDUCTORS Optoelectronics Application Note Designing VCNL4000 into an Application INTRODUCTION The VCNL4000 is a proximity sensor with an integrated ambient light sensor. It is the industry’s first optical sensor to combine an infrared emitter, PIN photodiode, ambient


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    VCNL4000 16-bit 01-Nov-10 proximity sensor interfacing with microcontroller analog output Ambient light sensor proximity card Ambient Light Sensor distance measurement using ir mm ir proximity sensor circuit diagram light sensor VCNL4 infrared human motion detection sensor PDF

    SFERNICE RW

    Abstract: SFERNICE RW 16
    Text: VISHAY SFER NICE Resistive Products Application Note Fixed Wirewound Enamelled High Dissipation Resistors GROUP ASSEMBLY HORIZONTAL ASSEMBLY It is recommended that resistors should be installed with a distance between centres of approximately twice their diameter to aid dissipation efficiency.


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    01-Oct-09 SFERNICE RW SFERNICE RW 16 PDF

    IHLP-3232DZ-5A

    Abstract: IHLP-3232CZ-11 IHTH-1125KZ-5A IHLP-3232CZ-01
    Text: VISHAY DALE www.vishay.com Magnetics Application Note IHLP Selection Example IHLP-1616 APPLICATIONS L0 H DCR  IHEAT TYP. A ISAT (A) RTH (1) PHEAT (2) ET100 (3) K0 (4) (W) K1 (5) DCR  IHEAT TYP. (A) ISAT (A) IHLP-1616AB-01 RTH (1) PHEAT (2) ET100 (3) K0 (4)


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    IHLP-1616 ET100 IHLP-1616AB-01 IHLP-1616AB-11 IHTH-1125KZ-5A IHTH-1125MZ-5A 04-Dec-13 IHLP-3232DZ-5A IHLP-3232CZ-11 IHTH-1125KZ-5A IHLP-3232CZ-01 PDF

    lm2564

    Abstract: LM256 LM5642 SOT 23 marked R25 AN-1292 Si4840DY Si4850EY vishay resistor 220k sanyo capacitor SPDT FETs
    Text: National Semiconductor Application Note 1292 Chris Richardson September 2003 Introduction ON/SS1 and ON/SS2 pins must also be connected using a 0Ω resistor in the position J2. One of the two SPDT switches S1 and S2 should be left ‘ON’ and the other used to turn the


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    R10/R11 C18/C19/R22/R23) C20/C21R24/R25. LM5642 AN-1292 lm2564 LM256 SOT 23 marked R25 AN-1292 Si4840DY Si4850EY vishay resistor 220k sanyo capacitor SPDT FETs PDF

    lm2564

    Abstract: No abstract text available
    Text: User's Guide SNVA070B – May 2004 – Revised April 2013 AN-1292 LM5642 Evaluation Board 1 Introduction The LM5642 IC is a dual channel, current-mode, synchronous buck converter controller. It can handle input voltages of up to 36V and delivers two independent output voltages from 1.23V up to 90% of the


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    SNVA070B AN-1292 LM5642 lm2564 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4459ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si4459ADY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)


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    2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7102DN www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


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    Si7102DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3410DV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si3410DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    Si7145DP 2002/95/EC Si7145DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification


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    SiR492DP SiR492DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)


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    2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4168DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si4168DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR878ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR878ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)


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    2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    EFB810-3/4-3/Si7145DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7145DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si7145DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 EFB810-3/4-3/Si7145DP PDF

    Untitled

    Abstract: No abstract text available
    Text: UFL200CB60P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage • Optimized for power conversion: welding and industrial


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    UFL200CB60P OT-227 OT-227 2002/95/EC UFL200CB60P 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR492DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR492DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR468DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR468DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    PA16

    Abstract: No abstract text available
    Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)


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    11-Mar-11 PA16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


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    Si2369DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Definitions VISHAY Vishay Dale Inductor and Magnetic Product Terminology IN T R O D U C T IO N The scope of this application note is to define the terminology associated with inductors and their applications. Some of these terms are listed in the component data sheets. Many terms go beyond the specification of inductors. These terms describe


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    06-Mar-02 PDF