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Vishay Siliconix SI3410DV-T1-GE3 MOSFET N-CH 30V 8A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3410DV-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3076	Buy Now
RS	SI3410DV-T1-GE3	Bulk			20	1 - 10 - 100 $0.518 1000 $0.466 10000 $0.441	Get Quote
Vishay Siliconix SI3410DV-T1-E3 MOSFET N-CH 30V 8A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3410DV-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.16054	Buy Now
Bristol Electronics	SI3410DV-T1-E3		553		8	1 - 10 $0.7125 100 $0.4631 1000 $0.228 10000 $0.228	Buy Now
Quest Components	SI3410DV-T1-E3		442			1 $0.95 10 $0.95 100 $0.475 1000 $0.285 10000 $0.285	Buy Now
Vishay Intertechnologies SI3410DV-T1-GE3 Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3410DV-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI3410DV-T1-GE3	Reel	9,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2583	Buy Now
Mouser Electronics	SI3410DV-T1-GE3		19,036			1 $1.17 10 $0.751 100 $0.495 1000 $0.347 10000 $0.262	Buy Now
Newark	SI3410DV-T1-GE3	Cut Tape			5	1 $0.8 10 $0.689 100 $0.478 1000 $0.478 10000 $0.478	Buy Now
	SI3410DV-T1-GE3	Reel			3,000	1 $0.37 10 $0.37 100 $0.37 1000 $0.37 10000 $0.334	Buy Now
Quest Components	SI3410DV-T1-GE3		400			1 $0.95 10 $0.95 100 $0.475 1000 $0.285 10000 $0.285	Buy Now
	SI3410DV-T1-GE3		400			1 $0.95 10 $0.95 100 $0.475 1000 $0.285 10000 $0.285	Buy Now
	SI3410DV-T1-GE3		100			1 $0.875 10 $0.7 100 $0.4375 1000 $0.4375 10000 $0.4375	Buy Now
	SI3410DV-T1-GE3		100			1 $0.875 10 $0.7 100 $0.4375 1000 $0.4375 10000 $0.4375	Buy Now
TTI	SI3410DV-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.259	Buy Now

Avnet Asia	SI3410DV-T1-GE3			20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI3410DV-T1-GE3			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI3410DV-T1-GE3. Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:4.1W; No. Of Pins:6Pins Rohs Compliant: No \|Vishay SI3410DV-T1-GE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI3410DV-T1-GE3.	Reel	9,000		3,000	1 $0.37 10 $0.37 100 $0.37 1000 $0.37 10000 $0.334	Buy Now
Vishay BLH SI3410DV-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI3410DV-T1-GE3		500		8	1 - 10 $0.7125 100 $0.4631 1000 $0.228 10000 $0.228	Buy Now

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SI3410DV Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3410DV-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP		Original	PDF
SI3410DV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP		Original	PDF

SI3410DV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Vishay DaTE CODE tsop-6 Abstract: si3410 Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410	PDF
Untitled Abstract: No abstract text available Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
A 69254 Abstract: S7-20 Text: New Product Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 VDS (V) Qg (Typ) • TrenchFET Power MOSFET 9.2 nC APPLICATIONS RoHS COMPLIANT • Notebook Load Switch	Original	Si3410DV Si3410DV-T1-E3 08-Apr-05 A 69254 S7-20	PDF
338 u Abstract: AN609 Text: Si3410DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3410DV AN609 13-Aug-07 338 u	PDF
A 69254 Abstract: No abstract text available Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 18-Jul-08 A 69254	PDF
S-72077 Abstract: Si3410DV T12C6F Text: SPICE Device Model Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3410DV 18-Jul-08 S-72077 T12C6F	PDF
A 69254 Abstract: No abstract text available Text: New Product Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 VDS (V) Qg (Typ) • TrenchFET Power MOSFET 9.2 nC APPLICATIONS RoHS COMPLIANT • Notebook Load Switch	Original	Si3410DV Si3410DV-T1-E3 18-Jul-08 A 69254	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si3410DV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si3410DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
BSS138 NXP Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250 Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety	Original	OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF

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SI3410DV Search Results

SI3410DV Price and Stock

Vishay Siliconix SI3410DV-T1-GE3

Vishay Siliconix SI3410DV-T1-E3

Vishay Intertechnologies SI3410DV-T1-GE3

Vishay Intertechnologies SI3410DV-T1-GE3.

Vishay BLH SI3410DV-T1-GE3

SI3410DV Datasheets (2)

SI3410DV Datasheets Context Search

Vishay DaTE CODE tsop-6

Untitled

Untitled

A 69254

338 u

A 69254

S-72077

A 69254

Untitled

Untitled

Untitled

Arduino Mega2560

BSS138 NXP

si7121