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    SI4840DY Price and Stock

    Vishay Siliconix SI4840DY-T1-E3

    MOSFET N-CH 40V 10A 8SO
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    DigiKey SI4840DY-T1-E3 Cut Tape 1
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    SI4840DY-T1-E3 Digi-Reel 1
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    SI4840DY-T1-E3 Reel 2,500
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    Bristol Electronics SI4840DY-T1-E3 165 3
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    Quest Components SI4840DY-T1-E3 132
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    SI4840DY-T1-E3 31
    • 1 $1.575
    • 10 $1.449
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    Vishay Siliconix SI4840DY-T1-GE3

    MOSFET N-CH 40V 10A 8SO
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    DigiKey SI4840DY-T1-GE3 Reel 2,500
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    Vishay BLH SI4840DY

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    Bristol Electronics SI4840DY 1,700 3
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    Vishay Intertechnologies SI4840DY-SNX

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    Bristol Electronics SI4840DY-SNX 154
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    Vishay Intertechnologies SI4840DY-T1-E3

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    Bristol Electronics SI4840DY-T1-E3 82
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    Quest Components SI4840DY-T1-E3 5,456
    • 1 $2.716
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    • 100 $2.716
    • 1000 $1.0185
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    SI4840DY-T1-E3 61
    • 1 $15
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    Chip 1 Exchange SI4840DY-T1-E3 111
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    Component Electronics, Inc SI4840DY-T1-E3 500
    • 1 $1.54
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    IBS Electronics SI4840DY-T1-E3 4,500 399
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    Find more SI4840DY price and stock on Findchips.com

    SI4840DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4840DY Vishay Intertechnology N-Channel 40-V (D-S) MOSFET Original PDF
    SI4840DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET Original PDF
    Si4840DY SPICE Device Model Vishay N-Channel 40-V (D-S) MOSFET Original PDF
    SI4840DY-T1 Vishay Intertechnology N-Channel 40-V (D-S) MOSFET Original PDF
    Si4840DY-T1 Vishay Siliconix N-Channel 40-V (D-S) MOSFET Original PDF
    SI4840DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 10A 8-SOIC Original PDF
    SI4840DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 10A 8-SOIC Original PDF

    SI4840DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4840DY

    Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 11-Mar-11 US2050

    Si4840DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4840DY N-Channel 40-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4840DY mode10

    Si4840DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4840DY 16-Apr-01

    Si4840DY-T1-GE3

    Abstract: No abstract text available
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4840BDYT1GE3

    Abstract: SI4840B
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si4840BDY vs. Si4840DY Description: N-Channel, 40 V D-S MOSFET Package: SO-8 Pin Out: Identical  Part Number Replacements: Si4840BDY-T1-GE3 replaces Si4840DY-T1-GE3 Si4840BDY-T1-E3 replaces Si4840DY-T1-E3


    Original     		PDF Si4840BDY Si4840DY Si4840BDY-T1-GE3 Si4840DY-T1-GE3 Si4840BDY-T1-E3 Si4840DY-T1-E3 SI4840BDYT1GE3 SI4840B

    7636

    Abstract: 7636 mosfet mosfet 4812 4812 mosfet 1216 AN609 Si4840DY
    Text: Si4840DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4840DY AN609 14-Nov-05 7636 7636 mosfet mosfet 4812 4812 mosfet 1216

    Untitled

    Abstract: No abstract text available
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		PDF Si4840DY Si4840DY-T1 Si4840DY--E3 Si4840DY-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 11-Mar-11

    Si4840DY

    Abstract: Si4840DY-T1
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel)


    Original     		PDF Si4840DY Si4840DY-T1 S-03950--Rev. 16-May-03

    Si4840DY

    Abstract: No abstract text available
    Text: Si4840DY New Product Vishay Siliconix N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4840DY S-01031--Rev. 15-May-00

    SI4840DY-T1-E3

    Abstract: Si4840DY Si4840DY-T1
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		PDF Si4840DY Si4840DY-T1 Si4840DY--E3 Si4840DY-T1--E3 SI4840DY-T1-E3

    Si4840DY

    Abstract: Si4840DY-T1
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		PDF Si4840DY Si4840DY-T1 Si4840DY--E3 Si4840DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4840DY

    Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 18-Jul-08

    SI4840DY

    Abstract: No abstract text available
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel)


    Original     		PDF Si4840DY Si4840DY-T1 Si4840DY--E3 Si4840DY-T1--E3 S-40951--Rev. 10-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		PDF Si4840DY Si4840DY-T1 Si4840DY--E3 Si4840DY-T1--E3 S-50402--Rev. 07-Mar-05

    Si4840DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4840DY 18-Jul-08

    4211Q

    Abstract: 4210Q panasonic vfd vf 100 fault
    Text: TPS40210-Q1, TPS40211-Q1 www.ti.com. SLVS861A – AUGUST 2008 – REVISED OCTOBER 2008 4.5-V TO 52-V INPUT, CURRENT-MODE BOOST CONTROLLERS


    Original     		PDF TPS40210-Q1, TPS40211-Q1 SLVS861A 4211Q 4210Q panasonic vfd vf 100 fault

    Untitled

    Abstract: No abstract text available
    Text: TPS43335-Q1 TPS43336-Q1 SLVSAV6A – JUNE 2011 – REVISED NOVEMBER 2011 www.ti.com LOW IQ, SINGLE BOOST, DUAL SYNCHRONOUS BUCK CONTROLLER Check for Samples: TPS43335-Q1, TPS43336-Q1 FEATURES 1 • • • • • • • • • • • Two Synchronous Buck Controllers


    Original     		PDF TPS43335-Q1 TPS43336-Q1 TPS43335-Q1, V/10V/11V 150kHz 600kHz TPS43336)

    Untitled

    Abstract: No abstract text available
    Text: TPS43330-Q1 TPS43332-Q1 SLVSA82 – MARCH 2011 www.ti.com LOW IQ, SINGLE BOOST, DUAL SYNCHRONOUS BUCK CONTROLLER Check for Samples: TPS43330-Q1, TPS43332-Q1 FEATURES 1 • • • • • • • • • • • Two Synchronous Buck Controllers One Pre-Boost Controller


    Original     		PDF TPS43330-Q1 TPS43332-Q1 SLVSA82 TPS43330-Q1, V/10V/11V 150kHz 600kHz TPS43332)

    20-PIN

    Abstract: LTC3835 LTC3835-1 LTC3835EFE LTC3835EUFD FE204
    Text: LTC3835 Low IQ Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 10V Low Operating Quiescent Current: 80µA OPTI-LOOP Compensation Minimizes COUT ±1% Output Voltage Accuracy


    Original     		PDF LTC3835 140kHz 650kHz 400kHz QFN-12 250kHz 750kHz, MSOP-16E, QFN-16, SSOP-16 20-PIN LTC3835 LTC3835-1 LTC3835EFE LTC3835EUFD FE204

    OSC4/SM

    Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
    Text: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user


    Original     		PDF LatticeXP2-17 24-6R8 OSC4/SM MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5

    Untitled

    Abstract: No abstract text available
    Text: LTC3835 Low IQ Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 10V Low Operating Quiescent Current: 80µA OPTI-LOOP Compensation Minimizes COUT ±1% Output Voltage Accuracy


    Original     		PDF LTC3835 140kHz 650kHz 400kHz QFN-12 250kHz 750kHz, MSOP-16E, QFN-16, SSOP-16

    qmb-111p

    Abstract: NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER CH-4542 DLP31DN201ML4L 52u27
    Text: 5 4 Version Date Author Remarks 0.1 05.06.2007 WAM Initial version 0.2 28.11.2007 PHA 3 2 1 Correction of PCI-Bus Correction of minor errors D 0.3 05.03.2008 PHA D Fix VCC SB +5V Standby to VCC (+5V) LCD (X15) Pinout compatible with MSM800 12V Supply removed / Supply the 12V external on .


    Original     		PDF MSM800 CH-4542 MSEBX800 330uF VCC12 SI4453DY 2N7002 qmb-111p NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER DLP31DN201ML4L 52u27