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Vishay Siliconix SI4168DY-T1-GE3 MOSFET N-CH 30V 24A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4168DY-T1-GE3	Cut Tape	26,145		1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
	SI4168DY-T1-GE3	Digi-Reel	26,145		1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
	SI4168DY-T1-GE3	Reel	22,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.47226	Buy Now
New Advantage Corporation	SI4168DY-T1-GE3		2,500		1	1 - 10 - 100 - 1000 - 10000 $0.5178	Buy Now
Vishay Intertechnologies SI4168DY-T1-GE3 Trans MOSFET N-CH 30V 16A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4168DY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4168DY-T1-GE3	Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.41162	Buy Now
Mouser Electronics	SI4168DY-T1-GE3		3,565			1 $1.18 10 $0.875 100 $0.656 1000 $0.511 10000 $0.425	Buy Now
Verical	SI4168DY-T1-GE3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.6923	Buy Now
	SI4168DY-T1-GE3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.4175	Buy Now
	SI4168DY-T1-GE3		1,300		14	1 - 10 - 100 $0.436 1000 $0.436 10000 $0.436	Buy Now
Arrow Electronics	SI4168DY-T1-GE3		2,500	18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.4133	Buy Now
	SI4168DY-T1-GE3	Cut Strips	1,300	18 Weeks	1	1 $0.7025 10 $0.6094 100 $0.5235 1000 $0.436 10000 $0.436	Buy Now
Newark	SI4168DY-T1-GE3	Cut Tape			2,500	1 - 10 - 100 $0.689 1000 $0.689 10000 $0.689	Buy Now

TTI	SI4168DY-T1-GE3	Reel	10,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.413	Buy Now
EBV Elektronik	SI4168DY-T1-GE3			22 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI4168DY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4168DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 24A 8-SOIC		Original	PDF

SI4168DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
si4168 Abstract: 69005 Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si4168DY Si4168DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4168 69005
69005 Abstract: No abstract text available Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si4168DY Si4168DY-T1-GE3 11-Mar-11 69005
4311 mosfet transistor Abstract: 4311 mosfet 407 AN609 Si4168DY 69032 Text: Si4168DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	Si4168DY AN609, 27-Oct-08 4311 mosfet transistor 4311 mosfet 407 AN609 69032
Si4168DY Abstract: No abstract text available Text: SPICE Device Model Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	Si4168DY 18-Jul-08
specification sheet of diode Abstract: si41 Text: SPICE Device Model Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	Si4168DY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 specification sheet of diode si41
Si4168DY Abstract: Si4168DY-T1-GE3 si4168 69005 Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si4168DY Si4168DY-T1-GE3 11-Mar-11 si4168 69005
SI4168DY-T1-GE3 Abstract: SI4168DY 69005 Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si4168DY Si4168DY-T1-GE3 18-Jul-08 69005
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4168DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4168DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si4168DY Si4168DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si4168DY Si4168DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
AU-6433 Abstract: winbond wpce773la0dg Function Generator IC 400mhz 1D05V isl88731 JM70 G1442RD WPCE773LA0DG wistron Wistron Corporation Text: 5 4 3 2 JM70 -MV Block Diagram 46 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) 5V_AUX_S5 3D3V_AUX_S5 SYSTEM DC/DC 46 TPS51124 EMC2102 Penryn ICS9LPRS365BKLFT SYSTEM DC/DC DCBATOUT SMSC Mobile CPU CLK GEN. D 1 Project code: 91.4AN01.001 PCB P/N : 48.4AN01.0SA	Original	PDF	4AN01 ISL62392 ICS9LPRS365BKLFT EMC2102 TPS51124 667/800/1066MHz PS8101 RT9026 PCIex16 AU-6433 winbond wpce773la0dg Function Generator IC 400mhz 1D05V isl88731 JM70 G1442RD WPCE773LA0DG wistron Wistron Corporation
AU-6433 Abstract: SCD01U16V2KX-3GP winbond wpce773la0dg ADP3208 WPCE773LA0DG ISL88731 1D05V Function Generator IC 400mhz au6433 JM70 Text: 5 4 3 2 JM70 -MV Block Diagram 46 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) 5V_AUX_S5 3D3V_AUX_S5 SYSTEM DC/DC 46 TPS51124 EMC2102 Penryn ICS9LPRS365BKLFT SYSTEM DC/DC DCBATOUT SMSC Mobile CPU CLK GEN. D 1 Project code: 91.4AN01.001 PCB P/N : 48.4AN01.0SA	Original	PDF	4AN01 ISL62392 ICS9LPRS365BKLFT EMC2102 TPS51124 667/800/1066MHz PS8101 RT9026 PCIex16 AU-6433 SCD01U16V2KX-3GP winbond wpce773la0dg ADP3208 WPCE773LA0DG ISL88731 1D05V Function Generator IC 400mhz au6433 JM70

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
WPCE773 Abstract: WPCE773LA0DG winbond WPCE773 wistron jv50 WISTRON power sequence N10M-GE ICS9LPRS365BKLFT N10M-GE1 rt8202a b30 c250 f 1208 Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CG01.001 PCB P/N : 48.4CG01.0SA REVISION : 08245-SA JV50 Block Diagram 42 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 SMSC Mobile CPU CLK GEN. D SYSTEM DC/DC EMC2102 Penryn ICS9LPRS365B	Original	PDF	4CG01 08245-SA ISL62392 ICS9LPRS365B EMC2102 TPS51124 667/800/1066MHz 64MbX16X4 RT9026 WPCE773 WPCE773LA0DG winbond WPCE773 wistron jv50 WISTRON power sequence N10M-GE ICS9LPRS365BKLFT N10M-GE1 rt8202a b30 c250 f 1208
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477