3f381
Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V
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ZXMHC3F381N8
ZXMHC3F381N8TC
522-ZXMHC3F381N8TC
ZXMHC3F381N8TC
3f381
ZXMHC3F381N8
1000T
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LP3401LT1G
Abstract: LP340
Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G VDS V = -30V 3 RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology
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LP3401LT1G
236AB)
3000/Tape
LP3401LT3G
10000/Tape
OT-23
LP3401LT1G
LP340
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM16601EA-S •General Description ■Features ELM16601EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • • Vds=30V Vds=-30V Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 135mΩ(Vgs=-10V)
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ELM16601EA-S
ELM16601EA-S
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CEM4600
Abstract: TF36
Text: CEM4600 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).
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CEM4600
CEM4600
TF36
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Untitled
Abstract: No abstract text available
Text: Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance
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DMG3401LSN
AEC-Q101
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APM4534
Abstract: APM4534K STD-020C APM45
Text: APM4534K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/4.5A RDS(ON) = 65mΩ(typ.) @ VGS = 10V RDS(ON) = 90mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-3.3A, RDS(ON) = 110mΩ(typ.) @ VGS = -10V Top View of SOP − 8
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APM4534K
-30V/-3
APM4534
APM4534K
STD-020C
APM45
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apm4550
Abstract: APM4550K STD-020C
Text: APM4550K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/7A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -30V/-5A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V
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APM4550K
-30V/-5A,
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
apm4550
APM4550K
STD-020C
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APM4552
Abstract: APM45 apm455
Text: APM4552K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • D1 D1 N-Channel 30V/7A, D2 D2 RDS(ON) = 23mΩ(typ.) @ VGS = 10V RDS(ON) = 34mΩ(typ.) @ VGS = 4.5V • S1 G1 P-Channel -30V/-5A, S2 G2 RDS(ON) = 46mΩ(typ.) @ VGS =-10V
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APM4552K
-30V/-5A,
APM4552
Operating0-2000
APM45
apm455
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M2106
Abstract: APM2106 APM2106SG STD-020C apm21
Text: APM2106SG Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • D2 N-Channel D2 D1 D1 30V/3.2A, RDS(ON)= 60mΩ(typ.) @ VGS= 10V G2 S2 G1 S1 RDS(ON)= 85mΩ(typ.) @ VGS= 4.5V • P-Channel -30V/-2.2A, RDS(ON)= 105mΩ(typ.) @ VGS= -10V
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APM2106SG
-30V/-2
JSC70-8
M2106
APM2106
APM2106SG
STD-020C
apm21
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mar 835 mosfet
Abstract: 4542 mosfet APM4542K apm 1250 STD-020C mosfet 4542 ua782
Text: APM4542K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel D1 D1 30V/7A, RDS(ON) =17mΩ(typ.) @ VGS = 10V RDS(ON) =22mΩ(typ.) @ VGS = 4.5V • S1 G1 S2 G2 P-Channel Top View of SOP − 8 -30V/-5.5A, RDS(ON) =35mΩ(typ.) @ VGS =-10V
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APM4542K
-30V/-5
mar 835 mosfet
4542 mosfet
APM4542K
apm 1250
STD-020C
mosfet 4542
ua782
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MOSFET N-CH 200V
Abstract: APM4532 APM4532K
Text: APM4532K Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel D1 D1 D2 D2 30V/5A, RDS(ON) =35mΩ(Typ.) @ VGS = 10V RDS(ON) =60mΩ(Typ.) @ VGS = 4.5V • S1 G1 S2 G2 P-Channel -30V/-3.5A, Top View of SOP − 8 RDS(ON) =85mΩ(Typ.) @ VGS =-10V
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APM4532K
-30V/-3
APM4532
Packa60
MOSFET N-CH 200V
APM4532
APM4532K
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LP9435LT1G
Abstract: p94 marking lp9435
Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ LP9435LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance
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LP9435LT1G
236AB)
3000/Tape
LP9435LT3G
10000/Tape
OT-23
LP9435LT1G
p94 marking
lp9435
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p-channel sot-23 .5A
Abstract: lt2307 P-CHANNEL 30V DS MOSFET
Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet FEATURES GENERAL DESCRIPTION The LT2307 is the P-Channel logic enhancement mode power 1. -30V/-3.2A, RDS(ON) =63mÙ@VGS=-10V field effect transistors, using high cell density, DMOS trench 2. -30V/-2.5A, RDS(ON) =80mÙ@VGS=-4.5V
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LT2307
-30V/-3
-30V/-2
OT-23)
OT-23
p-channel sot-23 .5A
P-CHANNEL 30V DS MOSFET
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mosfet p-channel 2A
Abstract: 24V 1A mosfet
Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V
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LT2347
LT2347
-30V/-2
-30V/-2A,
-30V/-1A,
mosfet p-channel 2A
24V 1A mosfet
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ZXMP
Abstract: ZXMP3A16GTA ZXMP3A16 DS335
Text: A Product Line of Diodes Incorporated ZXMP3A16G ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 45mΩ @ VGS = -10V -7.5A 70mΩ @ VGS = -4.5V -5.9A -30V This MOSFET has been designed to minimize the on-state resistance
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ZXMP3A16G
AEC-Q101
DS33575
522-ZXMP3A16GTA
ZXMP3A16GTA
ZXMP
ZXMP3A16GTA
ZXMP3A16
DS335
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ANPEC
Abstract: APM4429 Anpec Electronics diode marking H2
Text: APM4429 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-13A, RDS ON = 8mΩ(typ.) @ VGS = -20V 5 RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V • • • 5 Super High Density Cell Design & , % , 5 ! $ , / "
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APM4429
-30V/-13A,
ANPEC
APM4429
Anpec Electronics
diode marking H2
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TS16949
Abstract: ZXMC3F31DN8 ZXMC3F31DN8TA
Text: ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V BR DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to
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ZXMC3F31DN8
D-81541
TX75248,
TS16949
ZXMC3F31DN8
ZXMC3F31DN8TA
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Untitled
Abstract: No abstract text available
Text: Dual P-channel MOSFET ELM14805AA-N •General description ■Features ELM14805AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=-30V Id=-8A (Vgs=-20V) Rds(on) < 18mΩ (Vgs=-20V) Rds(on) < 19mΩ (Vgs=-10V)
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ELM14805AA-N
ELM14805AA-N
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DFN 3.3X3.3
Abstract: AON7405
Text: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS= -10V) -30V
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AON7405
AON7405
DFN 3.3X3.3
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smd transistor A1
Abstract: DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS V = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01
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KO3401
OT-23
smd transistor A1
DIODE smd marking A1
smd transistor 2a 43
KO3401
smd transistor marking A1
SMD TRANSISTOR MARKING 94
SMD TRANSISTOR A1 SOT23
smd diode A1
smd transistor A1 sot-23
marking A1 TRANSISTOR
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APM4301
Abstract: APM4301K STD-020C
Text: APM4301K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-15A, RDS ON = 5.5mΩ (typ.) @ VGS=-20V RDS(ON)= 6mΩ (typ.) @ VGS=-10V RDS(ON)= 10mΩ (typ.) @ VGS=-4.5V • • • • Top View of SOP − 8 Super High Dense Cell Design Reliable and Rugged
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APM4301K
-30V/-15A,
APM4301
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM4301
APM4301K
STD-020C
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ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
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Untitled
Abstract: No abstract text available
Text: PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V SOT-23 -3.1A Current Unit: inch mm Features RDS(ON) , VGS@-10V, [email protected]<98mΩ RDS(ON) , [email protected], [email protected]<114mΩ RDS(ON) , [email protected], [email protected]<165mΩ Advanced Trench Process Technology
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PPJA3403
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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AO3403
Abstract: P-Channel MOSFET
Text: AO3403 30V P-Channel MOSFET General Description Product Summary The AO3403 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -2.6A
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AO3403
AO3403
Junction-to-AmbieO3403
P-Channel
MOSFET
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