p-channel sot-23 .5A
Abstract: lt2307 P-CHANNEL 30V DS MOSFET
Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet FEATURES GENERAL DESCRIPTION The LT2307 is the P-Channel logic enhancement mode power 1. -30V/-3.2A, RDS(ON) =63mÙ@VGS=-10V field effect transistors, using high cell density, DMOS trench 2. -30V/-2.5A, RDS(ON) =80mÙ@VGS=-4.5V
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LT2307
-30V/-3
-30V/-2
OT-23)
OT-23
p-channel sot-23 .5A
P-CHANNEL 30V DS MOSFET
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LT2307
Abstract: No abstract text available
Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMO S trench technology. This high density process is especially tailored
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Original
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PDF
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LT2307
-30V/-3
-30V/-2
APPL20
300us,
OT-23
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P-CHANNEL 30V DS MOSFET
Abstract: LT2307 p-channel sot-23 .5A
Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effec t transistors, using high cell density, DMO S trench technology. This high density process is especially tailored
|
Original
|
PDF
|
LT2307
-30V/-3
-30V/-2
P-CHANNEL 30V DS MOSFET
p-channel sot-23 .5A
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