MOSFET Search Results

MOSFET Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET Price and Stock

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Infineon Technologies AG SICMOSFET SILICON CARBIDE MOSFET KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SICMOSFET		9		1	1 $123.88 10 $123.88 100 $123.88 1000 $123.88 10000 $123.88	Buy Now
Infineon Technologies AG MOSFET1-KIT 20-100V FETS SOT23 10PC 18VALUES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOSFET1-KIT		2		1	1 $56.15 10 $42.749 100 $56.15 1000 $56.15 10000 $56.15	Buy Now
Infineon Technologies AG MOSFET2-KIT 20-100V FETS 150PC(10V 15EACH)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOSFET2-KIT		2		1	1 $58.88 10 $44.947 100 $58.88 1000 $58.88 10000 $58.88	Buy Now
Infineon Technologies AG MOSFET3-KIT 30V FET PQFN5X6 80PC(30V 10EACH)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOSFET3-KIT		1		1	1 $49.21 10 $42.745 100 $42.745 1000 $42.745 10000 $42.745	Buy Now
Infineon Technologies AG MOSFET4-KIT 30-100V SO8/PQFN5X6/PQFN3X3 80PC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOSFET4-KIT				1	1 $63.2 10 $54.892 100 $54.892 1000 $54.892 10000 $54.892	Buy Now

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MOSFET Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MOSFETIRF6602		International Rectifier	DirectFET Power MOSFET(Vdss=20V)		Original	PDF
MOSFET Parameters		NXP Semiconductors	AN11158 - Understanding power MOSFET data sheet parameters		Original	PDF

MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)	Original	PDF	TPC8075
Untitled Abstract: No abstract text available Text: TPN22006NH MOSFETs Silicon N-channel MOS U-MOS-H TPN22006NH 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)	Original	PDF	TPN22006NH
TL1454 Abstract: No abstract text available Text: TL1454, TL1454Y DUAL-CHANNEL PULSE-WIDTH-MODULATION PWM CONTROL CIRCUIT SLVS086B – APRIL 1995 – REVISED NOVEMBER 1997 D D D D D D D D, N OR PW PACKAGE (TOP VIEW) Two Complete PWM Control Circuits Outputs Drive MOSFETs Directly Oscillator Frequency . . . 50 kHz to 2 MHz	Original	PDF	TL1454, TL1454Y SLVS086B TL1454 TL1454EVM-085 SLVA061 SLVA057 SLVA059 SLVU012,
Untitled Abstract: No abstract text available Text: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)	Original	PDF	TPH8R80ANH
Untitled Abstract: No abstract text available Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z	Original	PDF	TPD7211F TPD7211F SON8-P-0303-0 7211F
Untitled Abstract: No abstract text available Text: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The	OCR Scan	PDF	TLP595A 300mA 2500Vrms UL1577, E67349 TLP595A
transistor 2SK1603 Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all	OCR Scan	PDF	OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
FN521 Abstract: FN 521 UFN522 UFN523 UFN520 Text: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.	OCR Scan	PDF	UFN520 UFN522 UFN523 UFN520 UFN521 UFN522 FN521 FN 521 UFN523
UFNF430 Abstract: diode ed 2437 UFNF432 Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.	OCR Scan	PDF	UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432
d3004 transistor Abstract: P3004 mofset Text: SN75372 DUAL MOSFET DRIVER SLLSQ25A- P3004. JULY 1986 • Dual Circuits Capable of Driving Hlgh-Capacltance Loads at High Speeds • Output Supply Voltage Range up to 24 V D OR P PACKAGE TOP VIEW • Low Standby Power Dissipation 1A[ 1 E[ 2 U V CC1 7 ]1 Y	OCR Scan	PDF	SN75372 SLLSQ25A- P3004. d3004 transistor P3004 mofset
ufn440 Abstract: UFN441 Text: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.	OCR Scan	PDF	UFN440 UFN441 UFN442 UFN443 UFN441 UFN442
UFN432 Abstract: mosfet UFN432 UFN 432 UFN431 UFN433 Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.	OCR Scan	PDF	UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433
UFN450 Abstract: UFN451 Text: POWER MOSFET TRANSISTORS Hfflg? 500 Volt, 0.4 Ohm N-Channel UFN452 UFN453 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficie n t design a ch ieves a very low Rosiom and a high tran scon d u ctan ce.	OCR Scan	PDF	UFN452 UFN453 UFN450 UFN451 UFN452 UFN450 UFN451
toshiba 2505 dd Abstract: No abstract text available Text: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly	OCR Scan	PDF	TPD1028AS TPD1028AS toshiba 2505 dd

Untitled Abstract: No abstract text available Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.	OCR Scan	PDF	TLP3540 TLP3540 5X1010
2sj239 Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL Text: MOSFET Product Matrix VdssM * 100 1 20 60 Id A 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]	OCR Scan	PDF	2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
lts 542 Abstract: UFN540 FN640 Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.	OCR Scan	PDF	UFN540 UFN541 UFN542 UFN543 lts 542 UFN540 FN640
ufn330 Abstract: No abstract text available Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching	OCR Scan	PDF	UFN332 UFN333 UFN330 UFN331 UFN332 ufn330
120v battery charger Schematic Diagram Abstract: schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V Text: y UNITRODE Advanced Low Voltage Boost Controller With Backup Charger UCC29401 UCC39401 ADVANCE INFORMATION FEATURES DESCRIPTION • Synchronous Conversion with Internal MOSFETs The UCC39401 is a multi-output single inductor synchronous boost control ler optimized to operate from a low input voltage such as a single or dual	OCR Scan	PDF	200mW UCC29401 UCC39401 UCC39401 120v battery charger Schematic Diagram schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V
ufn1130 Abstract: No abstract text available Text: POWER MOSFET TRANSISTORS 700 Volt, 3.5 Ohm N-Channel UFNU3° FEATU RES DESCRIPTION • • • • • • This new U nitrode power MOSFET utilizes the latest high voR&ge advanced technology The efficient design achieves a very low Rosion. a n d a & ig ti tranSe^rvductance.	OCR Scan	PDF	UFN1130 ufn1130
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE TPD1035F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1035F LOW-SIDE POWER SWITCH FOR MOTOR, SOLENOID, AND LAMP DRIVERS TPD1035F is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly	OCR Scan	PDF	TPD1035F TPD1035F
UFNZ40 Abstract: No abstract text available Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w	OCR Scan	PDF	UFNZ40 UFNZ42 UFNZ40,
UFN140 Abstract: UFN143 kd 617 Text: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	PDF	UFN142 ufni43 UFN140 UFN141 UFN142 UFN143 Q2173 UFN140 UFN143 kd 617
5v to 20v pwm amplifier 40khz Abstract: 100KRPM Text: UC1625 UC3625 U IM IT R O O E Brushless DC Motor Controller FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode DESCRIPTION The UC1625 and UC3625 motor controller ICs integrate most of	OCR Scan	PDF	UC1625 UC3625 UC3625 140ns. 140ns 5v to 20v pwm amplifier 40khz 100KRPM

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MOSFET Search Results

MOSFET Result Highlights (5)

MOSFET Price and Stock

Infineon Technologies AG SICMOSFET

Infineon Technologies AG MOSFET1-KIT

Infineon Technologies AG MOSFET2-KIT

Infineon Technologies AG MOSFET3-KIT

Infineon Technologies AG MOSFET4-KIT

MOSFET Datasheets (2)

MOSFET Datasheets Context Search

Untitled

Untitled

TL1454

Untitled

Untitled

Untitled

transistor 2SK1603

FN521

UFNF430

d3004 transistor

ufn440

UFN432

UFN450

toshiba 2505 dd

Untitled

2sj239

lts 542

ufn330

120v battery charger Schematic Diagram

ufn1130

Untitled

UFNZ40

UFN140

5v to 20v pwm amplifier 40khz