Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LP9435 Search Results

    SF Impression Pixel

    LP9435 Price and Stock

    LRC Leshan Radio Co Ltd LP9435LT1G

    Fet 5.3A 30V 3PIN SOT-23 P-channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics LP9435LT1G 330,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0319
    Buy Now

    LP9435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LP9435LT1G

    Abstract: p94 marking lp9435
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ LP9435LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF LP9435LT1G 236AB) 3000/Tape LP9435LT3G 10000/Tape OT-23 LP9435LT1G p94 marking lp9435

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ LP9435LT1G S-LP9435LT1G 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF LP9435LT1G S-LP9435LT1G 236AB) AEC-Q101 3000/Tape LP9435LT3G S-LP9435LACTERISTICS

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LP9435ET1G GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS ON < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D D D 8 7 D


    Original
    PDF LP9435ET1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ LP9435LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF LP9435LT1G 236AB) OT-23