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    TRANSISTOR SILICON CARBIDE Search Results

    TRANSISTOR SILICON CARBIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SILICON CARBIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description


    Original     		PDF IJW120R100T1

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


    Original     		PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide

    30639

    Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602
    Text: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D 30639 CuMoCu Immo 65808 TH 2066.4 83348 98737 transistor 13602

    0150SC-1250M

    Abstract: No abstract text available
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA,

    TH 2066.4

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D TH 2066.4

    60522

    Abstract: 8822 TRANSISTOR CuMoCu CRF24010 CRF24010D 61256 30639
    Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D 60522 8822 TRANSISTOR CuMoCu 61256 30639

    electrolytic capacitor, .1uF

    Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor 0150SC-1250M
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor

    electrolytic capacitor, .1uF

    Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
    Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IGN4450M50 TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M50 is an internally pre-matched, gallium nitride GaN high electron mobility transistor (HEMT). This part is designed for


    Original     		PDF IGN4450M50 IGN4450M50 300us IGN4450M50-REV-PR1-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for


    Original     		PDF IGN2735M250 IGN2735M250 300us IGN2735M250-REV-PR1-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IGN5459M40 Preliminary TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN5459M40 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for


    Original     		PDF IGN5459M40 IGN5459M40 300us IGN5459M40-REV-PR1-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    TC 9164 N

    Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D TC 9164 N 95160 85713 CuMoCu F240 08816

    ATC1206

    Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt

    CRF24060

    Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers
    Text: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers

    25V/FTP 50210

    Abstract: CRF24060F
    Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 25V/FTP 50210 CRF24060F

    SJEP120R125

    Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
    Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    CRF24010F

    Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
    Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324

    Untitled

    Abstract: No abstract text available
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D

    95160

    Abstract: CuMoCu 21864 300G 74382 85713 CRF24060 CRF24060D F240 40014
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D 95160 CuMoCu 21864 300G 74382 85713 F240 40014

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IGN4450M90 Preliminary TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M90 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for C-Band


    Original     		PDF IGN4450M90 IGN4450M90 300us IGN4450M90-REV-PR1-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		PDF 0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS,