CRF240 Search Results

CRF240 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
CRF24010	Cree	10 W, SiC RF Power MESFET	Original	PDF
CRF-24010	Cree	Class A/B 10 W SiC MESFET RF Transistor	Original	PDF
CRF-24010-001	Cree	FET Transistor, 10W SIC RF Power MESFET	Original	PDF
CRF-24010-101	Cree	FET Transistor, 10W SIC RF Power MESFET	Original	PDF
CRF24010D	Cree	10 W SiC RF Power MESFET Die	Original	PDF
CRF24010FE	Cree	RF FETs, Discrete Semiconductor Products, 10W RF SIC MESFET FLANGED 440166	Original	PDF
CRF24010PE	Cree	RF FETs, Discrete Semiconductor Products, 10W RF SIC MESFET PILL 440196	Original	PDF
CRF24010-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, IC MESFET SIC 10W TEST FIXTURE	Original	PDF
CRF24060	Cree	60 W, SiC RF Power MESFET	Original	PDF
CRF-24060	Cree	60 W SiC RF Power MESFET	Original	PDF
CRF24060D	Cree	60 W SiC RF Power MESFET Die	Original	PDF
CRF24060FE	Cree	RF FETs, Discrete Semiconductor Products, 10W RF SIC MESFET FLANGED 440193	Original	PDF
CRF24060-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, IC MESFET SIC 60W TEST FIXTURE	Original	PDF

CRF240 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24060D CRF24060 CRF24060D	PDF
30639 Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602 Text: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CRF24010D CRF24010 CRF240 CRF24010D 30639 CuMoCu Immo 65808 TH 2066.4 83348 98737 transistor 13602	PDF
95160 Abstract: CuMoCu 21864 300G 74382 85713 CRF24060 CRF24060D F240 40014 Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24060D CRF24060 CRF24060D 95160 CuMoCu 21864 300G 74382 85713 F240 40014	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F	PDF
TH 2066.4 Abstract: No abstract text available Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CRF24010D CRF24010 CRF240 CRF24010D TH 2066.4	PDF
TC 9164 N Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816 Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24060D CRF24060 CRF24060D TC 9164 N 95160 85713 CuMoCu F240 08816	PDF
ATC1206 Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt	PDF
C17AH Abstract: CRF24060F CRF24060 Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24060 CRF24060 CRF240 C17AH CRF24060F	PDF
60522 Abstract: 8822 TRANSISTOR CuMoCu CRF24010 CRF24010D 61256 30639 Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CRF24010D CRF24010 CRF240 CRF24010D 60522 8822 TRANSISTOR CuMoCu 61256 30639	PDF
CRF24060 Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers Text: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24060 CRF24060 CRF240 CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers	PDF
25V/FTP 50210 Abstract: CRF24060F Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24060 CRF24060 CRF240 25V/FTP 50210 CRF24060F	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F	PDF
CRF24010F Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324 Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324	PDF

schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
127324 Abstract: No abstract text available Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation	Original	CRF-24010-001 CRF-24010-101 CRF-24010 127324	PDF
Cree Microwave Abstract: CRF-24010 CRF-24010-001 CRF-24010-101 Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010 Cree Microwave CRF-24010-001 CRF-24010-101	PDF
127324 Abstract: CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010 CRF-24010-001 Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation	Original	CRF-24010-001 CRF-24010-101 CRF-24010 127324 CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010-001	PDF
169113 Abstract: 174867 173425 Text: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation	Original	CRF-24060-101 CRF-24060 169113 174867 173425	PDF
Untitled Abstract: No abstract text available Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010	PDF
CRF-24010-101 Abstract: CRF-24010 CRF-24010-001 88933 42676 Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010 CRF-24010-101 CRF-24010-001 88933 42676	PDF
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx	PDF
Cree Microwave Abstract: CRF-24060 silicon carbide transistor 20607 20607 ma 75 809 Text: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation	Original	CRF-24060-101 CRF-24060 Cree Microwave silicon carbide transistor 20607 20607 ma 75 809	PDF
utc 1018 Abstract: UF1050B-IC-E uf1050 DEV-SYS-1852-1A-ND UF1050A CB-OEMSPA311X-04 cb-oemspa332x-02 Bluetooth spp Price unifi csr CME6005 Text: Universal Time Code UTC Receivers and Demo Boards C-MAX Solutions provide a universal time code receiver with very low power operation for Radio Controlled Time applications. The CME8000 provides a simple solution for worldwide operation with integrated Crystal and	Original	CME8000 100uA CME6005 100uA, 28-SSOP 561-1007-5-ND 561-1008-1-ND 561-1008-2-ND§ 561-1015-ND UF1050A-IC-E utc 1018 UF1050B-IC-E uf1050 DEV-SYS-1852-1A-ND UF1050A CB-OEMSPA311X-04 cb-oemspa332x-02 Bluetooth spp Price unifi csr	PDF

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CRF240 Search Results

CRF240 Datasheets (13)

CRF240 Datasheets Context Search

Untitled

30639

95160

Untitled

TH 2066.4

TC 9164 N

ATC1206

C17AH

60522

CRF24060

25V/FTP 50210

Untitled

Untitled

CRF24010F

schematic diagram atx Power supply 500w

127324

Cree Microwave

127324

169113

Untitled

CRF-24010-101

220v AC voltage stabilizer schematic diagram

Cree Microwave

utc 1018