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    Text: Part Number: Integra IGN4450M90 Preliminary TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M90 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for C-Band


    Original     		PDF IGN4450M90 IGN4450M90 300us IGN4450M90-REV-PR1-DS-REV-B