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    Text: Part Number: Integra IGN5459M40 Preliminary TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN5459M40 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for


    Original     		PDF IGN5459M40 IGN5459M40 300us IGN5459M40-REV-PR1-DS-REV-B