85N60C
Abstract: UPS SIEMENS E72873 ID100
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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85N60C
O-264
E72873
ID100
20100315c
85N60C
UPS SIEMENS
E72873
ID100
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Untitled
Abstract: No abstract text available
Text: Power Packages TO-218 SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE E INCHES A A1 ØP Q H1 D TERM. 2 q L2 L1 TERM. 1 L R L3 15o c b J1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.185 0.195 4.70 4.95 - A1 0.058 0.062 1.48 1.57 - b 0.433 0.443 11.00 11.25
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O-218
O-218
O-264AA
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10 AMP 1200V RECTIFIER DIODE
Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Text: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML25EUZ06B
25EUZ06B
SML30SUZ03S
SML30SUZ03SC
SML30SUZ12B
SML30SUZ12BC
SML30SUZ12JD
SML30SUZ12S
SML30SUZ12TC
OT227
10 AMP 1200V RECTIFIER DIODE
600V 25A Ultrafast Diode
1200v diode to247
ultrafast diode 10a 300v
smps 450W
ULTRA fast rectifier diode 30A 200V cathode common
ULTRA fast rectifier diode 30A 200V anode common
1200v 30A to247
Diode C3
1200v 25A to247
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RHRG3040
Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Text: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090
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RHRD6120
RHRD6120S
RHRP8120
RHRP15120
RHRP15100
RHRP1590
RHRP1580
RHRP1570
RHRP1560
RHRP1550
RHRG3040
RHRU100120
RHRG30120
RHRD640S
RHRG1550CC
RHRD440
RHRG5040
RHRG7540
RHRP1540
RHRP3040
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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ABE 027
Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Text: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.
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IRFM460
IRFM460D
IRFM460U
O-254
MIL-S-19S00
SSM52
I-372
ABE 027
ely transformers
IRFM460
IRFM460U
N431
BBV 32 transistors
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Untitled
Abstract: No abstract text available
Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5014LVR
O-264
O-264AA
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Untitled
Abstract: No abstract text available
Text: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT8030LVR
O-264
O-264AA
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Untitled
Abstract: No abstract text available
Text: APT8030LVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 27A 0.300Í1 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT8030LVFR
O-264
00A/HS,
O-264AA
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TO-264-aa
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30
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IXFK90N20Q
IXFK90N20QS
O-264
O-264AA
TO-264-aa
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21N100
Abstract: 21N10 ixtw DIXYS IXTN21N100
Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ
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21N100
O-264
Cto150
OT-227
21N100
21N10
ixtw
DIXYS
IXTN21N100
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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IXSK35N120AU1
O-26re
IXSK35N120AU1
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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BD3 diode
Abstract: APT8032LNR ty-100a
Text: A d van ced P o w er Te c h n o l o g y O D APT8032LNR O S POWER MOS IVe 800V 25.0A 0.320 AVALANCHE RATED N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS !d ' dm V GS ^GSM All Ratings: Tc = 25°C unless otherwise specified.
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APT8032LNR
APT8032LNR
MIL-STD-750
O-264AA
00D1SM7
BD3 diode
ty-100a
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IXTK33N50
Abstract: No abstract text available
Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V
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33N50
O-264AA
33N50
IXTK33N50
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Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient
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50N60BU1
50N60BU1
to150
PLUS247TM
O-264AA
IXSX50N60BU1
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ot 409
Abstract: SMD-264 K44N50
Text: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A
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44N50
48N50
48N50
Cto150
OT-227
E153432
ot 409
SMD-264
K44N50
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RHR75120
Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Text: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2
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RHR1Y75120CC
RHR1Y75120CC
O-264AA
430EB71
Q0ti37fll
RHR75120
RHR75120C
TO-264-aa
TA49042
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Untitled
Abstract: No abstract text available
Text: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C
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IXFK90N20Q
IXFK90N20QS
O-264AA
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30
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120N60B
PLUS247â
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TO-264-aa
Abstract: No abstract text available
Text: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C
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IXFK33N50
IXFK35N50
33N50
35N50
O-264AA
outlinesTO-264AAexceptL,
TO-264-aa
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APT12082
Abstract: APT12082LNR
Text: A dvanced po w er Te c h n o lo g y APT12082LNR 1200V 16.0A 0.82fí POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol 'DSS All Ratings: Tc = 25°C unless otherwise specified. P a ra m e te r Drain-Source Voltage
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APT12082LNR
MIL-STD-750
O-264AA
APT12082
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
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250ns
250ns
55N50
50N50
50N50
O-264
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25
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35N120AU1
to150
O-264AA
JEDECTO-264AA
35N120AU1
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