Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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IXFK33N50
IXFK35N50
O-264
33N50
35N50
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35N50
Abstract: NS4250 IXFK33N50 IXFK35N50
Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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IXFK33N50
IXFK35N50
O-264
33N50
35N50
35N50
NS4250
IXFK33N50
IXFK35N50
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35N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFK33N50
IXFK35N50
33N50
35N50
35N50
O-264
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IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power
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IXAN0009
IXAN0009
0009
ixan0009 2
ixan0009 3
TMS320F2407a
GE SCR Manual
mosfet inverter 2kW 100khz
smps 1kW
schematic diagram inverter 500w USING MOSFET
schematic diagram PWM inverter 500w
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PDF
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TO-264-aa
Abstract: No abstract text available
Text: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C
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OCR Scan
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IXFK33N50
IXFK35N50
33N50
35N50
O-264AA
outlinesTO-264AAexceptL,
TO-264-aa
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smd diode 513
Abstract: TO-264 35n50
Text: HiPerFET Power MOSFETs V DSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t D ^D25 DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C
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OCR Scan
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IXFK33N50
IXFK35N50
33N50
35N50
35N50
O-264
smd diode 513
TO-264
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264AA
Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Text: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C
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IXFK33N50
IXFK35N50
to150
33N50
35N50
O-264AA
264AA
SMD-264
TO264AA
smd diode 513
TO-264-aa
diode 253
TO-264AA
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ixys ixfn 55n50
Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01
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O-247
O-247
T0-204
O-264
O-264
76N06-11
75N06-12
110N06
76N07-11
76N07-12
ixys ixfn 55n50
170n10
C1106
IXFH26N50
c1124
IXFN170N10
c1120
15N100
76N06
IXFN36n60
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TO-264-aa
Abstract: d2529
Text: IXYS HiPerFET IXFK 35N50 V DSS Power MOSFETs I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 35 A 0.15 Q trr <250 ns Preliminary data Symbol Test Conditions Maximum Ratings V oss Tj =25°Cto150°C 500 V VDGR T, = 25° C to 150° C; RGS= 1 M£2
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35N50
Cto150
TO-264-aa
d2529
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ne 22 mosfet
Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)
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ISOPLUS220TM
ISOPLUS247TMV
T0268
T0264
OT227B
O-263
O-220
247TM
O-247
O-204
ne 22 mosfet
IXFH26N60Q
IXFT12N100Q
IXFR100N25
IXFN26N90
FN230
IXFN36N60
N50P
IXFN44N50U2
IXFN80N50
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