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    BD3 diode

    Abstract: APT8032LNR ty-100a
    Text: A d van ced P o w er Te c h n o l o g y O D APT8032LNR O S POWER MOS IVe 800V 25.0A 0.320 AVALANCHE RATED N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS !d ' dm V GS ^GSM All Ratings: Tc = 25°C unless otherwise specified.


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    APT8032LNR APT8032LNR MIL-STD-750 O-264AA 00D1SM7 BD3 diode ty-100a PDF