tc5118165bj
Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide
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TC5116405BSJ/BST-60
TC5116405BSJ/BST-70
TC5116405BSJ/BST
300mil)
cycles/64ms
TC51V16325BJ:
SOJ70-P-400A
tc5118165bj
TC5118165
TC5117405
SOJ42-P-400
TC5117405BSJ
hidden refresh
TSOP70-P-400
TC51181
TC5118
TOSHIBA TSOP50-P-400
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TC511632
Abstract: TC511632FL
Text: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high
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TC511632FL/FTL-70/85/10
1632FL7FTL
511632FL7F
1632FLVFTL
TC511632
TC511632FL
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TC5116160
Abstract: A461
Text: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit
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TC5116160AI/AFT-60/70/80
TC5116160AJ/AFT
TC51161610AJ/AFT-60/70/80
A8R--A11R
TC5U6160AJ/AFT-60/70/80
TC5116160
A461
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TCFT 1103
Abstract: TC5116400J A173 TC511640J A10RC TCWU
Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116400J/FT-60/70
TC5116400J/FT
TC5116400J/FT.
1M516DRAM.
TCFT 1103
TC5116400J
A173
TC511640J
A10RC
TCWU
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BST60
Abstract: No abstract text available
Text: TOSHIBA TC5U6400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5U6400BSJ/BST-60/70
TC5116400BSJ/BST
300mil)
BST60
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TC5116400FT
Abstract: No abstract text available
Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116400J/FT
TC5116400J/FT.
1M516DRAM.
TC5116400FT
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SK 3002
Abstract: No abstract text available
Text: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as
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TC5116165CJ/CFT-50
576-WORD
16-BIT
TC5116165CJ/CFT
42-pin
6165CJ/CFT-50
SOJ42-P-400-1
SK 3002
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TC511665
Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Text: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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TC511665BJ/BZ
TC511665
TC511665BZ
TC511665BJ
ZIP40
TC5116
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TC5116160
Abstract: AI05a CFT50
Text: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced
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TC5116160CJ/CFT-50
576-WORD
16-BIT
TC5116160CJ/CFT
SOJ42-P-400-1
TC5116160
AI05a
CFT50
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Untitled
Abstract: No abstract text available
Text: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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TC511665BJ/BZ
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Untitled
Abstract: No abstract text available
Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5116100BSJ-60/70
5116100BS
51161OOBSJ
300mil)
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BST60
Abstract: No abstract text available
Text: TOSHIBA TC5116400BSJ/BST-6Q/70 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both
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TC5116400BSJ/BST-6Q/70
TC5116400BSJ/BST
300mil)
DR16020794
0027bl3
TC5116400BSJ/BST-60/70
BST60
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Untitled
Abstract: No abstract text available
Text: -60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3680A0 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 18 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high
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----------------------------THM3680A0S/SG
THM3680A0
TC5116400J
555mW
THMxxxxxx-60)
059mW
THMxxxxxx-70)
TCH724fl
C-101
THM3680A0S/SG
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A11RC
Abstract: No abstract text available
Text: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116160AJ/AFT-60/70/80
TC5116160AJ/AFT
00B5777
0D2577Ã
TC51161610AJ/AFT-60/70/80
0Q25771
TC5116160AÃ
A11RC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 3640A0 is a 4,194,304 word by 36 bit dynamic RAM m odule which is assem bled with 9 TC5116400J devices on the printed circuit board. This m odule is optim ized for applications which require high
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THM3640A0S/SG
3640A0
TC5116400J
xxxxxx-60)
xxxxxx-70)
THM3640A0S/5G
THM3640A0S/SG
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5116405BSJ/BST-60
TC5116405BSJ/BST
300mil)
DR16060295
SOJ26-P-300C)
BST60
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TC511664
Abstract: No abstract text available
Text: I N T E G R A T E D CIRCUIT TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T C511664J / Z - 8 0 , TC511664J / Z -10 TECHNICAL DATA SILICON GATE CMOS 65,536 W O R D X 16 BIT D Y N A M IC R A M * This is advanced information and specifica tions are subject to change without notice.
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C511664J
TC511664J
TC511664J/Z
TC5116G4J/Z
100mA
400mil
40pln
47Smlt
TCS11884Z
TC511664
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Untitled
Abstract: No abstract text available
Text: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The TC511664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed
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TC511664J/Z
1664J/Z
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CST A 200
Abstract: 5116405 TC5116405
Text: IN T EG R A T ED TOSHIBA T O S H I B A M O S D I G I T A L I N T E G R A T E D CIRCUI T TC5116405 CSJ /CST-40 TC5116405 CSJ / CST - 50 TC5116405 C S J/ C ST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 WORD x4 BIT EDO HYPER PAGE DYNAMIC RAM
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TC5116405
/CST-40
TC5116405CSJ/CST
300mil)
CST A 200
5116405
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tc511664jl
Abstract: TC516
Text: TC51 6 5 ,5 3 6 W ORD X 16 BIT DYNAMIC RAM * This is advanced information and specifica tions are subject to change without notice. DESCRIPTION The TC511664JL/ZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664JL/ZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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TC511664JL/ZL
TC511S64JL/ZL
tc511664jl
TC516
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thm3640
Abstract: No abstract text available
Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3640A0 is a 4,194,304 word by 36 bit dynamic RAM module which is assembled with 9 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high
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THM3640A0S/SG
THM3640A0
TC5116400J
130ns
455mW
THMxxxxxx-60)
960mW
THMxxxxxx-70)
DQO-35)
thm3640
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csr bc4
Abstract: TC5116400BSJ BST60
Text: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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724fl
TC5116400BSJ/BSTW70
TC5116400BSJ/BST
300mil)
csr bc4
TC5116400BSJ
BST60
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
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BST60
Abstract: No abstract text available
Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5116405BSJ/BST60
16405BSJ/BST
16405B
TC5116405BSJ/BST
300mil)
TC5116405BS
J/BST-60
DR16060295
BST60
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