TC5117405
Abstract: TC5118165 equivalent of BFT 51 TC51181 TC5118165B
Text: TOSHIBA THM3680G5BS/BSG-60 THM3680G5BS/BSG-70 8,388,608 WORD X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits dynamic RAM module which assembled 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for application to the systems which are required high
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THM3680G5BS/BSG-60
THM3680G5BS/BSG-70
THM3680G5BS/BSG
TC5117405BSJ
TC5117445BSJ
620mW
THMxxxxxx-60)
990mW
THMxxxxxx-70)
THM3680G5BS/BSG-60/70
TC5117405
TC5118165
equivalent of BFT 51
TC51181
TC5118165B
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TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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EIAJ ED-4701-1
Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
Text: [3] 東芝半導体製品の品質･信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する
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M65BJ
TC5117405BST
TC51V16165BFT
TC5118165BFT
65deg
C/150deg
300cycles)
TC5117405BSJ
TC514265DJ
TC5118165BJ
EIAJ ED-4701-1
tc5118165bj
EIAJ ED-4701-1 C-111A
TC5118165
TC514265DJ
a107a
tc5165165
tc5117405
TC5165165B
failure rate TDDB
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edo ram 72pin
Abstract: TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns TC5118165BJ hidden refresh TC51181
Text: TOSHIBA THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 1,048,576 WORD X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity such
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THM3210B5BS/BSG-60
THM3210B5BS/BSG-70
THM3210B5BS/BSG
TC5118165BJ
890mW
THMxxxxxx-60)
575mW
THMxxxxxx-70)
edo ram 72pin
TC5117405
TC5118165
TC5118
bsg70
simm EDO 72pin
104ns
hidden refresh
TC51181
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tc5118165bj
Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide
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TC5116405BSJ/BST-60
TC5116405BSJ/BST-70
TC5116405BSJ/BST
300mil)
cycles/64ms
TC51V16325BJ:
SOJ70-P-400A
tc5118165bj
TC5118165
TC5117405
SOJ42-P-400
TC5117405BSJ
hidden refresh
TSOP70-P-400
TC51181
TC5118
TOSHIBA TSOP50-P-400
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mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
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TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BS
THM328025BS/BSG
TC5117405BSJ
704mW
THMxxxxxx-60)
074mW
THMxxxxxx-70)
DM32020695
M328025BS/BSG
THM328025BS/BSG-6Q/70
TC5117405
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Untitled
Abstract: No abstract text available
Text: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BSG-60/70
THM328025BS/BSG
TC5117405BSJ
704mW
DM32020695
THM328025BS/BSG
328025BS/BSG
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TC5117405
Abstract: BST60
Text: TOSHIBA T C 5 1 1 7 4 0 5 B S J / B S T -6 0 / 7 0 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5117405BSJ/BST
TC5117405BSJ/
300mil)
TC5117405BSJ/BST-60/70
DR16070295
TC5117405
BST60
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TC5117405
Abstract: No abstract text available
Text: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14
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TC5117405BSJ/BST,
TC5117445BSJ/BST
TC51V17405BST/BST,
TC51V17445BSJ/BST
THMxxxxxx-60
THMxxxxxx-70
TC5117405
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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OCR Scan
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TC5117405BSJ/BST-60/70
TC5117405BSJ/BST
TC5117405BSJ/BST
300mil)
DR16070295
SOJ26-P-300C)
BST60
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Untitled
Abstract: No abstract text available
Text: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which
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THM324005BS/BSG60/70
THM324005BS/BSG
TC5117405BSJ
620mW
THMxxxxxx-60)
990mWC
h9200
/09-Dsa/sas00fezei/\iHi
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Untitled
Abstract: No abstract text available
Text: QD2Ö531 TOSHIBA • - THM3680G5BS/BSGW70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for
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OCR Scan
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THM3680G5BS/BSGW70
THM3680G5BS/BSG
TC5117405BSJ
TC5117445BSJ
292mW
THMxxxxxx-60)
584mW
31AIV
ES9200
SSSD089EIAIH1
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TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM3680G5BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for
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OCR Scan
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PDF
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THM3680G5BS/BSG-60/70
THM3680G5BS/BSG
TC5117405BSJ
TC5117445BSJ
292mW
THMxxxxxx-60)
584mW
THMxxxxxx-70)
D-100
DM32040695
TC5117405
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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