FUSB2805MLX
Abstract: No abstract text available
Text: FUSB2805 USB2.0 High-Speed OTG Transceiver with ULPI Interface Features Description • Complies with USB 2.0, OTG Rev 1.3 Supplement, and ULPI Rev 1.1 Specifications • Supports 480 Mbps, 12 Mbps, and 1.5 Mbps USB2.0 Speeds The FUSB2805 is a UTMI+ Low-Pin Interface ULPI
|
Original
|
PDF
|
FUSB2805
FUSB2805
150ppm
com/dwg/ML/MLP32B
FUSB2805MLX
|
4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
|
OCR Scan
|
PDF
|
b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
|
Untitled
Abstract: No abstract text available
Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM PRELIMINARY SSZ006WV DISTINCTIVE CHARACTERISTICS • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times • High-speed Nibble Mode - 15-ns access, 35-ns cycle times
|
OCR Scan
|
PDF
|
Am90C255
SSZ006WV
80-ns
130-ns
15-ns
35-ns
WF009712
WF009742
|
Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
|
OCR Scan
|
PDF
|
HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
|
Untitled
Abstract: No abstract text available
Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,
|
OCR Scan
|
PDF
|
5C1M40
HY514403B
1AC15-00-MAY94
4b750fi6
HY514403BJ
HY514403BU
|
Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
V17410Ais
HY51V17410A
HY51V1741
D36-00-MAY94
4b75Q
HY51V17410A
HY51V17410AJ
HY51V17410ASLJ
HY51V17410AT
HY51V1741OASLT
|
Untitled
Abstract: No abstract text available
Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
PDF
|
HY51V16100B
4b750flÃ
1AD43-00-MAY95
QQ04374
HY51V16100BJ
HY51V16100BSU
|
Untitled
Abstract: No abstract text available
Text: -P R E L I M I N A R Y May 1996 Edition 1.2 FUJITSU PRODUCT PROFILE SHEET M B 8 118160A-60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB8118160A is a fully decoded CMOS Dynamic RAM DRAM that contains
|
OCR Scan
|
PDF
|
18160A-60/-70
16BIT
MB8118160A
16-bit
|
Untitled
Abstract: No abstract text available
Text: ^ ^ sSöSS^ - U MITSUBISHI LSlS M5M44260AJ,L,TP,RT-8,-10 FAST PAGE MODE 4 1 9 4 3 0 4 - B IT 2 6 2 1 4 4 - W 0 R D BY 1 6 -B IT D Y N A M IC RAM ! DESCRIPTION '9 0 - 1 2 - 0 8 PIN C O N FIG U R A TIO N (TOP VIEW ) This is a fam ily of 2 6 2 1 4 4 -w o rd by 16-bit dynamic RAMs.
|
OCR Scan
|
PDF
|
M5M44260AJ
16-bit
44pin
|
A1HV
Abstract: OQ11 SLTC
Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260
|
OCR Scan
|
PDF
|
16-bit
HY5118260
16-bit.
1A016-10-MAY94
GDD3543
HY5118260JC
HY5118260SLJC
A1HV
OQ11
SLTC
|
51s4260
Abstract: Hitachi 51S4260
Text: HM514260D Series HM51S4260D Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-510 Z Preliminary Rev. 0.0 Apr. 3, 1996 Description The Hitachi HM51(S)4260D is CMOS dynamic RAM organized as 262,144-word X 16-bit. HM51(S)4260D has realized higher density, higher performance and various functions by employing 0.8
|
OCR Scan
|
PDF
|
HM514260D
HM51S4260D
144-word
16-bit
ADE-203-510
4260D
16-bit.
51s4260
Hitachi 51S4260
|
Nippon capacitors
Abstract: No abstract text available
Text: HB56UW464EJ-6B/7B/8B 4,194,304-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-562 Z Preliminary Rev. 0.0 Apr. 16, 1996 Description The HB56UW464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
|
OCR Scan
|
PDF
|
HB56UW464EJ-6B/7B/8B
304-word
64-bit
168-pin
ADE-203-562
HB56UW464EJ
16-Mbit
HM51W
16405BS)
Nippon capacitors
|
WO1M
Abstract: Nippon capacitors
Text: HB56H164EJ Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
|
OCR Scan
|
PDF
|
HB56H164EJ
576-word
64-bit
ADE-203-697A
16-Mbit
HM5118165)
16-bit
74ABT16244)
WO1M
Nippon capacitors
|
tca 786
Abstract: RS5104 RS-5104 TCA 789
Text: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode
|
OCR Scan
|
PDF
|
HM5117400B
304-word
ADE-203-369A
mW/550
mW/495
HM51174
tca 786
RS5104
RS-5104
TCA 789
|
|
|
Untitled
Abstract: No abstract text available
Text: KM44V41OOA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4V 41 O O A /A L /A L L /A S L is a h ig h s p e e d C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m • Performance range:
|
OCR Scan
|
PDF
|
KM44V41OOA/AL/ALL/ASL
110ns
130ns
150ns
KM44V41
24-LEAD
300MIL)
300MIL,
D0n43b
|
Untitled
Abstract: No abstract text available
Text: HB56SW464DB -6B/7B 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-583B Z Rev. 2.0 Jan. 10, 1997 Description The HB56SW464DB is a 4M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1
|
OCR Scan
|
PDF
|
HB56SW464DB
304-word
64-bit
ADE-203-583B
16-Mbit
HM51W16405B)
24C02)
|
Untitled
Abstract: No abstract text available
Text: H Y 5 1 4 4 0 0 S e r ie s 1 M x 4-bit C M O S D R A M • • H Y U N D A I DESCRIPTION Hie HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
PDF
|
HY514400
1AC02-30-MAY94
4b750flfl
DG0244T
8700M
9060f7
1AC02-30-M
|
B203 A2
Abstract: HM5118165B HM5118165BJ-6 HM5118165BJ-7 HM5118165BJ-8 HM5118165BLJ-7 HM5118165BLJ-8 HM5118165BTT-6 HM5118165BJ6 Hitachi Scans-001
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended
|
OCR Scan
|
PDF
|
HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
B203 A2
HM5118165BJ-6
HM5118165BJ-7
HM5118165BJ-8
HM5118165BLJ-7
HM5118165BLJ-8
HM5118165BTT-6
HM5118165BJ6
Hitachi Scans-001
|
TCFT 1103
Abstract: TC5116400J A173 TC511640J A10RC TCWU
Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
|
OCR Scan
|
PDF
|
TC5116400J/FT-60/70
TC5116400J/FT
TC5116400J/FT.
1M516DRAM.
TCFT 1103
TC5116400J
A173
TC511640J
A10RC
TCWU
|
v9511
Abstract: T1464
Text: PRELIMINARY 4 MEG x 64 DRAM MODULE 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard nout in a 168-pin, dual-in-line memory m odule E IVIM) • High-performance CMOS silico i -gate process • Single +3.3V ±0.3V power supply• All device pins are TTL-compat ,ble
|
OCR Scan
|
PDF
|
168-pin,
048-cycle
128ms
P01-PD8
v9511
T1464
|
Untitled
Abstract: No abstract text available
Text: HB56U464EJ-6B/7B 4,194,304-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 BYTE DIMM HITACHI ADE-203-590 Z Preliminary Rev. 0.0 May. 14, 1996 Description The HB56U464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
|
OCR Scan
|
PDF
|
HB56U464EJ-6B/7B
304-word
64-bit
168-pin
ADE-203-590
HB56U464EJ
16-Mbit
HM5116405BS)
16-bit
|
KM48C2100ULL-6
Abstract: No abstract text available
Text: KM48C2100L/LL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2100L/LL is a CMOS high speed 2,097,152 b itX 8 Dynamic Random Access Memory. It's design is optimized for high performance applications
|
OCR Scan
|
PDF
|
KM48C2100L/LL
KM48C2100ULL-6
KM48C21OOL/LL-7
KM48C21OOL/LL-8
110ns
130ns
150ns
KM48C2100L/LL
28-LEAD
|
512KX4
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 4 4 0 3 B 1 M x 4 -b ¡t CM OS S e r ie s DRAM w ith 4 C A S PRELIMINARY DESCRIPTION Ttie HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
|
OCR Scan
|
PDF
|
HY514403B
compatib00
1AC15-00-MAY94
HY514403BJ
HY514403BU
HY514403BSU
512KX4
|
tractel
Abstract: s8m9
Text: •HYUNDAI HY51V4400B Series 1M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY51V4400B
TTL0/26
1AC12-00-MAY94
HY51V4400BJ
HY51V4400BU
HY51V4400BSU
tractel
s8m9
|