Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung
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GG1472D
KMM532512W/WG
KMM532512W
40-pin
72-pin
22jiF
130ns
150ns
180ns
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870Q
Abstract: mrs 751
Text: 144pin SDRAM SOD1MM KMM466S203CT KMM466S203CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203CT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S203CT
KMM466S203CT
144pin
2Mx64
400mil
144-pin
870Q
mrs 751
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM364C124BJ DRAM MODULE KMM364C124BJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124BJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124BJ consists of four CMOS
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KMM364C124BJ
KMM364C124BJ
1Mx64
1Mx16,
1Mx16bit
42-pin
400mil
48pin
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Untitled
Abstract: No abstract text available
Text: KMM366S400BTN NEW JEDEC SDRAM MODULE KMM366S400BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S400BTN is a 4M bit x 64 Synchronous Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S400BTN
KMM366S400BTN
4Mx64
400mil
168-pin
KMM366S400BTN-G8
KMM366S400BTN-G0
KMM366S400BTN-G2
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KMM366S204BTN-G0
Abstract: KMM366S204BTN-G2 cdq40 KMM366S204BTN
Text: KMM366S204BTN NEW JEDEC SDRAM MODULE KMM366S204BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S204BTN is a 2M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S204BTN
KMM366S204BTN
2Mx64
1Mx16,
400mil
168-pin
KMM366S204BTN-G8
KMM366S204BTN-G0
KMM366S204BTN-G2
cdq40
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samsung power module
Abstract: KMM374S400BTN-G2 ADQ37 71b4
Text: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S400BTN
KMM374S400BTN
4Mx72
400mil
168-pin
KMM374S400BTN-G8
KMM374S40OBTN-G0
KMM374S400BTN-G2
samsung power module
ADQ37
71b4
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Untitled
Abstract: No abstract text available
Text: KMM372V122CJ/CT DRAM MODULE KM M372V122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V122C consists of sixteen CMOS
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KMM372V122CJ/CT
M372V122CJ/CT
1Mx72
KMM372V122C
KMM372V122C-7
300mil
110ns
130ns
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KM44V16104BK
Abstract: No abstract text available
Text: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits
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KMM366F160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
KM44V16104BK
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTR ONI CS INC b?E D • 7^4142 KMM5321000BV/BVG SHGK DDlSllb DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5321000BV is a 1M b its x 32 Dynam ic RAM high d e n sity m em ory m odule. The S am sung
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KMM5321000BV/BVG
1Mx32
KMM5321000BV
20-pin
72-pin
22/iF
110ns
KMM5321000BV-7
130ns
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Untitled
Abstract: No abstract text available
Text: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary
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ib4142
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KMM374S1620AT-G0
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM374S1620AT KMM374S1620AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx4,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1620AT is a 16M bit x 72 Synchronous - Performance range
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KMM374S1620AT
KMM374S1620AT
16Mx72
16Mx4
400mil
168-pin
KMM374S1620AT-G0
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KMM374S1623AT-G0
Abstract: KM48S8030AT
Text: NEW JEDEC SDRAM MODULE KMM374S1623AT KMM374S1623AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623AT is a 16M bit x 72 Synchronous - Performance range
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KMM374S1623AT
KMM374S1623AT
16Mx72
400mil
168-pin
0037S
KMM374S1623AT-G0
KM48S8030AT
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM374S1600AT KMM374S1600AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx4, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1600AT is a 16M bit x 72 Synchronous - Performance range
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KMM374S1600AT
KMM374S1600AT
16Mx72
16Mx4,
400mil
168-pin
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KMM366S803AT-G2
Abstract: 30H22
Text: NEW JEDEC SDRAM MODULE KMM366S803AT KMM366S803AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S803AT is a 8M bit x 64 Synchronous - Performance range Max Freq. Speed
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KMM366S803AT
KMM366S803AT
8Mx64
400mil
168-pin
KMM366S803AT-G8
KMM366S803AT-G0
KMM366S803AT-G2
30H22
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KMM377S1620BT1-GH
Abstract: No abstract text available
Text: Preliminary KMM377S1620BT1 SDRAM MODULE KMM377S1620BT1 SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S1620BT1 is a 16M bit x 72 Synchro
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KMM377S1620BT1
KMM377S1620BT1
16Mx72
16Mx4,
16Mx4
400mil
18-bits
24-pin
KMM377S1620BT1-GH
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KM48C8000AS
Abstract: KM48c8100A KM48c8100as
Text: KMM364C803AK/AS KMM364C883AK/AS DRAM MODULE KMM364C803AK/AS & KMM364C883AK/AS Fast Page Mode 8Mx64 DRAM DIMM based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80 8 3A is a 8M bit x 64 Dynamic RAM high density memory module. The
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KMM364C803AK/AS
KMM364C883AK/AS
KMM364C803AK/AS
KMM364C883AK/AS
8Mx64
KMM364C80
400mil
48pin
168-pin
KM48C8000AS
KM48c8100A
KM48c8100as
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM377S2857AT2 SDRAM MODULE KMM377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S2857AT2 is a 128M bit x 72 Syn
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KMM377S2857AT2
KMM377S2857AT2
128Mx72
128Mx4,
KMM377S2857AT2-GH
100MHz
128Mx4
KMM377S2857AT2-GL
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44v16104
Abstract: No abstract text available
Text: KMM366F1680AK KMM366F1600AK DRAM MODULE KMM366F1680AK & KMM366F1600AK EDO Mode without buffer 16Mx64 DRAM DIMM based on 16Mx4, 8K & 4K Refresh, 3.3V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM366F168 0 0AK is a 16M bit x 64 Dynamic RAM high density memory module. The
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KMM366F1680AK
KMM366F1600AK
KMM366F1680AK
KMM366F1600AK
16Mx64
16Mx4,
KMM366F168
16Mx4bit
400mil
44v16104
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C120CJ/CT KMM372C120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V G EN E R A L DESCRIPTION FEATURES The Samsung KMM372C120C is a 1M bit x 72 Dynamic RAM high density memory module. The • Performance Range: tRAC tCAC 50ns
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KMM372C120CJ/CT
KMM372C120CJ/CT
1Mx72
KMM372C120C
300mil
48pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS
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KMM364V120CJ/CT
KMM364V120CJ/CT
1Mx64
364V120C
KMM364V120C
110ns
130ns
48pin
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Untitled
Abstract: No abstract text available
Text: KMM366F400BK KMM366F41OBK DRAM MODULE K M M 366F400B K & KM M 366F410BK ED O Mode w ithout buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The
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KMM366F400BK
KMM366F41OBK
366F400B
366F410BK
4Mx64
KMM366F40
300mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V400BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynam ic RAM high density m em ory module. The
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KMM372V400BK/BS
KMM372V41OBK/BS
KMM372V400BK/BS
KMM372V41
4Mx72
KMM372V40
KMM372V400BK
cycles/64ms
KMM372V400BS
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Untitled
Abstract: No abstract text available
Text: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V4Q0BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 D ynam ic RAM high density m em ory module. The
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KMM372V400BK/BS
KMM372V41OBK/BS
KMM372V4Q0BK/BS
KMM372V41
4Mx72
KMM372V40
48pin
168-pin
KMM372V400BK
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Untitled
Abstract: No abstract text available
Text: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung
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M5361000B1
KMM5361000B1
KMM5361000B1
KMM5361000B1-6
KMM5361000B1-7
KMM5361000B1-8
110ns
130ns
150ns
20-pin
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