HYM76V4M655HGLT6-8
Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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PC100
4Mx16
HYM76V4M655HG
4Mx64bits
4Mx16bits
400mil
54pin
168pin
HYM76V4M655HGLT6-8
HYM76V4M655HGLT6-P
HYM76V4M655HGLT6-S
HYM76V4M655HGT6-P
HYM76V4M655HGT6-S
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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4Mx64
PC100
4Mx16
HYM76V4655HGT6
4Mx64bits
4x16bits
400mil
54pin
168pin
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DIMM 1999
Abstract: No abstract text available
Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CT0-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4
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PC100
168pin)
M366S0424CT0-C80/C1H/C1L
4Mx64
4Mx16
K4S641632C-TC80/C1H/C1L
375mil
4K/64ms
DIMM 1999
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Untitled
Abstract: No abstract text available
Text: M366S0424DTS PC100 Unbuffered DIMM M366S0424DTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0424DTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S0424DTS
PC100
M366S0424DTS
4Mx64
4Mx16,
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: M464S0424FTS PC133/PC100 SODIMM M464S0424FTS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424FTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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M464S0424FTS
PC133/PC100
M464S0424FTS
4Mx64
4Mx16,
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED3DG644V-D1 32MB – 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Serial Presence Detect with EEPROM The WED3DG644V is a 4Mx64 synchronous DRAM module which consists of four 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8
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WED3DG644V-D1
4Mx64
PC100
PC133
WED3DG644V
4Mx16
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100MHZ
Abstract: 133MHZ WED3DL644V
Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by
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WED3DL644V
4Mx64
WED3DL644V
4x1Mx64.
4Mx16
133MHZ,
125MHZ
100MHZ.
100MHZ
133MHZ
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WED3DG644V-D1
Abstract: Y14W cs 6-06
Text: White Electronic Designs WED3DG644V-D1 32MB – 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM
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WED3DG644V-D1
4Mx64
PC100
PC133
WED3DG644V
4Mx16
WED3DG644V-D1
Y14W
cs 6-06
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WEDPN4M64V-XBX
Abstract: No abstract text available
Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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WEDPN4M64V-XBX
4Mx64
125MHz
32MByte
256Mb)
216-bit
100MHz
WEDPN4M64V-XBX
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Untitled
Abstract: No abstract text available
Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M64V-XBX
4Mx64
125MHz
WEDPN4M64V-XBX
32MByte
256Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: M464S0424DT1 PC100 SODIMM M464S0424DT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424DT1 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M464S0424DT1
M464S0424DT1
PC100
4Mx64
4Mx16,
400mil
144-pin
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K4E641612D
Abstract: No abstract text available
Text: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C
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M366F040
4Mx64
4Mx16
4Mx16,
4Mx64bits
4Mx16bits
K4E641612D
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BSS960A
Abstract: VDEBC2304
Text: V-Data VDEBC2304 PC-133 SDRAM Unbuffered SO-DIMM 4Mx64bits SDRAM DIMM based on 4Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDEBC2304 is 4Mx64 bits Synchronous DRAM Modules, The modules are composed of four 4Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil
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VDEBC2304
PC-133
4Mx64bits
4Mx16,
VDEBC2304
4Mx64
4Mx16
400mil
54pin
144pin
BSS960A
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED3DG644V-D1 32MB- 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Serial Presence Detect with EEPROM The WED3DG644V is a 4Mx64 synchronous DRAM module which consists of four 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8
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WED3DG644V-D1
4Mx64
PC100
PC133
WED3DG644V
4Mx16
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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4Mx64
PC133
4Mx16
HYM76V4M635HG
HYM76V4M635HGT6
4Mx64bits
4Mx16bits
400mil
54pin
168pin
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Untitled
Abstract: No abstract text available
Text: . IBM13N4644MCB IBM13N4734MCB 4M x 64/72 One-Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications • -10 for 66MHz applications typical
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IBM13N4644MCB
IBM13N4734MCB
168-Pin
4Mx64/72
PC100
66MHz
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Untitled
Abstract: No abstract text available
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T4644MPE 4M x 64 PC100 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 3 Units CAS Latency fCK Clock Frequency
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IBM11M4730C4M
E12/10,
IBM13T4644MPE
PC100
4Mx64
PC100
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HYM7V65400
Abstract: No abstract text available
Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V65400C
4Mx64
44-pin
168-pin
HYM7V65400
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 4 6 4 0 C IB M 1 1 M 4 6 4 0 C B 4M X 64 DRAM MODULE • Au contacts • Optimized for byte-write non-parity applications Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx64 Fast Page Mode DIMM
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4Mx64
110ns
130ns
03H7156
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Untitled
Abstract: No abstract text available
Text: IBM11M4640C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 4Mx64 Fast Page Mode DIMM • Performance: -60 -70 W c RAS Access Time 60ns 70ns fc A C CAS Access Time 20ns 25ns tA A Access Time From Address 35ns
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IBM11M4640C
4Mx64
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: VZÄ WHITE /MICROELECTRONICS WPN644106GM0VG 32MBYTE 4Mx64 Synchronous DRAM (3.3V Supply) SO-DIMM MODULE A D V A N C ED * GENERAL DESCRIPTION FEATURES • M a x im u m fre q u e n c y = 1 0 0 M H z (tcc=1 0ns) T h e W h ite M ic ro e le c tro n ic s W P N 6 44 1 0 B G 1 -1OVG is a 4 M x 64
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WPN644106GM0VG
32MBYTE
4Mx64)
54-pin
400-m
144-pin
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11-CQ2
Abstract: No abstract text available
Text: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK
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IBM13N4649JC
IBM13N4739JC
4Mx64/72
11-CQ2
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Untitled
Abstract: No abstract text available
Text: HYM76V4655HGT6 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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HYM76V4655HGT6
4Mx64,
4Mx16
PC100
HYM76V4655HGT6
4Mx64bits
4x16bits
400mil
54pin
168pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM364V400A consists of sixteen CMOS
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KMM364V400AK/AS
KMM364V400AK/AS
4Mx64
KMM364V400A
300mil
cycles/64ms
1000mil)
KM44V4000AK,
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