R5F5631
Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D
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RX63N
RX631
100-MHz
32-bit
12-bit
R01DS0098EJ0100
PLQP0176KB-A
PLQP0144KA-A
R5F5631
R5F563NBDDFP
A083H
100-6 p86
A161H
ir127
capacitor PMR 202 DM
IPR200
c04f
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Untitled
Abstract: No abstract text available
Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RX630
32-Bit
RX600
R01UH0040EJ0160
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A4HA
Abstract: No abstract text available
Text: LP3971 Power Management Unit for Advanced Application Processors General Description Features The LP3971 is a multi-function, programmable Power Management Unit, designed especially for advanced application processors. The LP3971 is optimized for low power handheld
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LP3971
A4HA
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C48D
Abstract: KM93C46 411E KM93C46I SC46
Text: SAMSUNG ELECTRONICS INC b? E D 71b414S ODlbälb OST SMGK CMOS EEPROM KM93C46 1K Bit Sería! Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating temperature range — KM93C46: Commercial — KM93C46I: Industrial • Single 5 Volt supply • High performance advanced CMOS technology
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71b414S
KM93C46
KM93C46:
KM93C46I:
250/xA
KM93C46
C48D
411E
KM93C46I
SC46
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T-29-25
Abstract: fet af JCSK123 KSK123 lovos S16-O
Text: SAMSUNG SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILT4N DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Drain Source Voltage Drain Gate Voltage
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KSK123
71bMm5
G0G7G04
T-29-25
S0T-23
JCSK123
T-29-25
fet af
JCSK123
KSK123
lovos
S16-O
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Untitled
Abstract: No abstract text available
Text: S A MS U N G SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILHN DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Drain Source Voltage Drain Gate Voltage
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GOG7004
KSK123
T-29-25
OT-23
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns
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71b4142
0Q151b4
KMM5362000B/BG
110ns
5362000B-7
130ns
KMM5362000B-8
150ns
KMM5362000B-6
cycles/16ms
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samsung KX
Abstract: ha13
Text: SA M S UN G E L E C T R O N I C S INC b7E D • 71b4m2 KM23C1Û01/1011 G □ □ 1 Ljc153 TÜfi ■ SMGK CMOS MASK ROM 1M-Bit (128KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072X 8 bit organization • Fast access time : 120ns(max). « Supply voltage : single+5V
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71b4m2
KM23C1
128KX8)
120ns
28-pin,
600mil,
32-pin,
525mil,
samsung KX
ha13
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SOT-23 MARKING T31
Abstract: SOT23s KSR1111 KSR2111
Text: SAMSUNG SE MI CON DUC TO R INC KSR2111 IME 0 £ 71b4142 0007131 b J PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION T~2>n- 1 3 Blas Resistor Bullt In • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In trias Resistor (R=22Kß)
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71b4145
KSR2111
22Kll)
KSR1111
T-31-
OT-23
Collector23
100/iA,
--10V,
SOT-23 MARKING T31
SOT23s
KSR1111
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BC103C
Abstract: bc 103
Text: SAMSUNG SEMICONDUCTOR INC 02 KS54HCTLS j2 ß § KS74HCTLS DE | 71b4142 □□Ob4bT S | ” Dual Pof-4 Data Selectors/Multiplexers Sele with 3-State Outputs -<3 / —y l FEATURES DESCRIPTION • • • • Each of these data selectors/multiplexers contains inverters
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71b4142
KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
BC103C
bc 103
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IRFS645
Abstract: IRFS644
Text: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 • 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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IRFS644/645
to-220F
IRFS644/645
IRFS644
IRFS645
GG173h3
VIRFS644
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
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71b4m2
DD17Qbfl
KM23V81
X8/512K
150ns
42-pin,
600mil,
44-pin,
KM23V8100B
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 KM23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)
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71b4m
KM23C8100FP2
DD1117S
150ns
64-pin
3fe414E
23C8100FP2)
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28C64C
Abstract: KM28C64
Text: SAM S UN G E L E C T R O N I C S INC 4EE D 71b4142 G011QS3 T CMOS EEPROM KM28C64/KM28C65 'T M L a ^ - Z T ] 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • O perating Tem perature Range Th e K M 28 C 64 /C 6 5 is a 8 ,1 9 2 x 8 bit E le c tric ally Eras
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71b4142
G011QS3
KM28C64/KM28C65
64I/K
32-byte
150fts/byte
200ns
100jiA
28C64C
KM28C64
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KSA1175
Abstract: KSC2785
Text: SAMSUNG SEMICONDUCTOR INC KSC2785 IME D | 71b4142 OOOtìbE 0 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9-1 7 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSG. TO-92S • Complement to KSA1175 • Collector-Base Voltage Vcso=60V • High Current Gain Bandwidth Product fT=300M H z ffyp
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KSC2785
KSA1175
300MHz
T-29-17
O-92S
-h-20
KSA1175
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SRAM timing
Abstract: No abstract text available
Text: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran
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KM79C86
32Kx9
44-Pin
912xx/
KM79C86
7Tb4142
DD177S1
SRAM timing
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TSOP 173 g
Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
71b4142
DD23bST
TSOP 173 g
KM684000ALG-7
4000 CMOS
KM684000ALGI-7L
KM684000ALP-7L
KM684000ALP-5L
KM684000AL
KM684000ALI
KM684000ALI-L
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34S71
Abstract: 005D C1005D
Text: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power
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KM44C
KM44C1005DJ
003427b
34S71
005D
C1005D
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32Kx32 Synchronous
Abstract: No abstract text available
Text: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.
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KM732V599A/L
32Kx32
32Kx32 Synchronous
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ka7309
Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE
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KS7214
KS7214
48-QFP-0707
37T37
71b4142
48-QFP-0707
ka7309
TI 81W
CAMERA 803 CMOS
sync timing generator
T3D 77
78235
T3D 91
oil temperature sensor generator
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16C256
Abstract: KM416C256DJ
Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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1C256D
256Kx16
40SOJ
KM416C256DJ
16C256
KM416C256DJ
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IRFIZ44
Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Text: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFWZ44/40
IRFIZ44/40
IRFWZ44/IZ44
IRFWZ40/IZ40
IRFWZ44
IRFIZ44
IRFWZ40
IRFIZ40
LS50A
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250M
Abstract: IRFS620 IRFS621
Text: N-CHANNEL POWER MOSFETS IRFS620/621 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS620/621
IRFS620
IRFS621
O-220
IRFS620/621
VDS-40V.
71b4142
250M
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D0233
Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Text: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS340/341
IRFS340
IRFS341
71b4142
2ti35ti
D0233
250JUA
250M
Tj-25DC
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