Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1MX32 Search Results

    1MX32 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    7MPV4120S20M Renesas Electronics Corporation 3.3V 1MX32 ASYNC SRAM MOD Visit Renesas Electronics Corporation
    7MPV4120S12M Renesas Electronics Corporation 3.3V 1MX32 ASYNC SRAM MOD Visit Renesas Electronics Corporation
    7MPV4120S15M Renesas Electronics Corporation 3.3V 1MX32 ASYNC SRAM MOD Visit Renesas Electronics Corporation

    1MX32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		PDF WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28

    Untitled

    Abstract: No abstract text available
    Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8


    Original     		PDF WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O0-31 A0-18

    WS1M32-XG3X

    Abstract: No abstract text available
    Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as


    Original     		PDF WS1M32-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32-XG3X I/O31 I/O30 I/O29 I/O28

    pc133 sdram

    Abstract: HYM4V33100DTYG-75
    Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


    Original     		PDF 1Mx32 PC133 1Mx16 HYM4V33100DTYG 1Mx16bits 1Mx16bits 400mil 50pin 132pin pc133 sdram HYM4V33100DTYG-75

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		PDF WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28

    Flash SIMM 80

    Abstract: E28F008SA EDI7F341MC 80pin-SIMM SIMM 80 jedec
    Text: EDI7F341MC White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages


    Original     		PDF EDI7F341MC 1Mx32 EDI7F341MC EDI7F2341MC E28F008SA EDI7F341MC-BNC: 150ns Flash SIMM 80 80pin-SIMM SIMM 80 jedec

    1mx8

    Abstract: E28F008SA EDI7F4341MC
    Text: EDI7F4341MC 1Mx32 FLASH MODULE FEATURES DESCRIPTION n 1Mx32 The EDI7F4341MC is organized as four banks of 1Mx32. The module is based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Intel's E28F008SA Flash Device


    Original     		PDF EDI7F4341MC 4x1Mx32 4x1Mx32 EDI7F4341MC 1Mx32. E28F008SA 150ns EDI7F4341MC90BNC 1mx8

    WEDF1M32B-XXX5

    Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
    Text: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature


    Original     		PDF WEDF1M32B-XXX5 1Mx32 120ns 1Mx32, 2Mx16 16KByte WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 32KByte WEDF1M32B-XXX5 1m 0880

    K3P6C2000B-SC

    Abstract: No abstract text available
    Text: K3P6C2000B-SC CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access


    Original     		PDF K3P6C2000B-SC 32M-Bit 2Mx16 /1Mx32) 100ns 150mA 70-SSOP-500 K3P6C2000B-SC 152x16

    Untitled

    Abstract: No abstract text available
    Text: KM23C32205BSG CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access


    Original     		PDF KM23C32205BSG 32M-Bit 2Mx16 /1Mx32) 100ns 150mA 70-SSOP-500 KM23C32205BSG 152x16

    ce1h

    Abstract: No abstract text available
    Text: HANBit HMF1M32M4V Flash-ROM Module 4MByte 1Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF1M32M4V GENERAL DESCRIPTION The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit


    Original     		PDF HMF1M32M4V 1Mx32Bit) 72Pin-SIMM, HMF1M32M4V x32bit HMF1M32M4V-70 32bit 72Pin ce1h

    Untitled

    Abstract: No abstract text available
    Text: HY5DU323222QP 32M 1Mx32 DDR SDRAM HY5DU323222QP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / May. 2004


    Original     		PDF HY5DU323222QP 1Mx32) 200Mhz HY5DU323222 432-bit 1Mx32

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52

    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57

    Untitled

    Abstract: No abstract text available
    Text: W PF 1 M 3 2 X -9 0 P SC 5 1Mx32 FLASH SIMM PRELIMINARY * FEATURES • ■ Access Time of 90ns ■ 100,000 Erase/Program Cycles Packaging: ■ Organized as 1Mx32 • 80-pin SIM M ■ Commercial Tem perature Range • The module is manufactured w ith four 1Mx8 CMOS flash


    OCR Scan     		PDF 1Mx32 80-pin Am29F080

    smd CODE L4

    Abstract: WF1M32-XXX
    Text: a WF1M32-XXX WHITE /MICROELECTRONICS 1Mx3212V FLASH MODULE, SMD 5962-94613 FEATURES • A ccess Tim es of 1 0 0 ,150ns ■ Packaging: • • ■ O rganized as 1M x32, user co n fig u ra b le as 2M x1 6 or 4M x8. ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Fianges


    OCR Scan     		PDF WF1M32-XXX 1Mx3212V 150ns 32-XG 150ns 100ns smd CODE L4 WF1M32-XXX

    Untitled

    Abstract: No abstract text available
    Text: a WS1M32-XG3X WHITE /MICROELECTRONICS 1Mx32 SRAM MODULE FEATURES • A c c e s s T im e s of 17, 20, 25ns Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation ■ Organized as tw o banks of 5 1 2K x3 2 , U ser C o nfig urable as


    OCR Scan     		PDF WS1M32-XG3X 1Mx32 WS1M32-XG3X AO-18 512Kx32

    Untitled

    Abstract: No abstract text available
    Text: a WPS1M32V-XXC M/HITE /MICROELECTRONICS 1Mx32SRAM 3.3V MODULE ADVANCED* FEATURES • ■ A ccess Tim es of 17, 20, 25, 35ns ■ C om m ercial Tem pe ratu re Range Packaging ■ T T L C o m p a tib le Inputs and O utputs • M o d u le is m a nufa cture d w ith eig h t 1M x4 SRAM m em ory


    OCR Scan     		PDF WPS1M32V-XXC 1Mx32SRAM

    Untitled

    Abstract: No abstract text available
    Text: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic


    OCR Scan     		PDF 32B-XXX5 1Mx325V/12V 120ns 1Mx32, 2Mx16 V/12V 32B-XG2TX5 32B-XHX5 66-pin, 5/12V)

    Untitled

    Abstract: No abstract text available
    Text: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one


    OCR Scan     		PDF HYM41V331OODTYG 1Mx32, 1Mx16 PC133 4V33100D x16bits 50pin 132pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V104AT KMM332V104AT Fast Page Mode 1Mx32 DRAM DIMM Low Power, 4K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM332V104AT is a 1M bit x 32 FEATURES • Performance Range: Dynamic RAM high density memory module. The Samsung KMM332V104AT consists of two CMOS


    OCR Scan     		PDF KMM332V104AT KMM332V104AT 1Mx32 1Mx16bit 44-pin 72-pin KMM332V104AT-L6

    Untitled

    Abstract: No abstract text available
    Text: KMM332F104AT-L KMM332F124AT-L DRAM MODULE KMM332F104AT-L / KMM332F124AT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low Pow er, 4K & 1K Refresh, 3.3V GEN ER AL FEATURES DESCRIPTION The Samsung KMM332F10 2 4AT is a 1M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM332F104AT-L KMM332F124AT-L KMM332F104AT-L KMM332F124AT-L 1Mx32 1Mx16, KMM332F10 16bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: M/HITE MICROELECTRONICS 1Mx32 SRAM 3.3V MODULE WPS1M32V-XXC ADVANCED* FEATURES • A cce ss T im e s o f 17, 20, 25, 35ns ■ C om m ercial Te m p e ra tu re Range ■ Packaging ■ TTL C om p a tib le Inputs and O utputs • M o d u le is m a n u fa c tu re d w it h e ig h t 1 M x 4 S R AM m em ory


    OCR Scan     		PDF 1Mx32 WPS1M32V-XXC 1Mx32

    Untitled

    Abstract: No abstract text available
    Text: M/HITE MICROELECTRONICS 1Mx32 SRAM 3.3V MODULE WPS1M32V-XXC ADVANCED* FEATURES • A c c e s s T i m e s o f 17, 20, 25, 3 5 n s ■ C o m m e r c ia l T e m p e r a t u r e Range ■ P a c k a g in g ■ TTL C o m p a t i b l e In p u ts and O u tp u t s


    OCR Scan     		PDF 1Mx32 WPS1M32V-XXC