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    RJP60F Search Results

    RJP60F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP60F7DPK-00#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP60F0DPE-00#J3 Renesas Electronics Corporation IGBT for IH, LDPAK(S)-(1), /Embossed Tape Visit Renesas Electronics Corporation
    RJP60F5DPM-00#T1 Renesas Electronics Corporation IGBT for IH Visit Renesas Electronics Corporation
    RJP60F0DPM-00#T1 Renesas Electronics Corporation IGBT for IH, TO-3PFM, /Tube Visit Renesas Electronics Corporation
    RJP60F4DPM-00#T1 Renesas Electronics Corporation IGBT for IH, TO-3PFM, /Tube Visit Renesas Electronics Corporation
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    RJP60F Price and Stock

    Renesas Electronics Corporation RJP60F5DPK-01-T0

    IGBT 600V 80A TO3P
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    DigiKey RJP60F5DPK-01-T0 Tube 79 1
    • 1 $4.79
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    Renesas Electronics Corporation RJP60F4DPM-00-T1

    IGBT TRENCH 600V 60A TO3PFM
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    DigiKey RJP60F4DPM-00-T1 Tube 78 1
    • 1 $5.49
    • 10 $3.854
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    Renesas Electronics Corporation RJP60F0DPM-00-T1

    IGBT 600V 50A 40W TO-3PFM
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    DigiKey RJP60F0DPM-00-T1 Tube 1
    • 1 $4.07
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    Renesas Electronics Corporation RJP60F5DPM-00-T1

    IGBT TRENCH 600V 80A TO3PFM
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    DigiKey RJP60F5DPM-00-T1 Tube 100
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    Renesas Electronics Corporation RJP60F0DPE-00-J3

    IGBT 600V 50A 122W LDPAK
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    RJP60F Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJP60F0DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 122W LDPAK Original PDF
    RJP60F0DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM Original PDF
    RJP60F4DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM Original PDF
    RJP60F4DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A Original PDF
    RJP60F5DPK-01#T0 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 80A 260.4W Original PDF
    RJP60F5DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 45W TO-3PFM Original PDF

    RJP60F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B

    RJP60F0DPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B RJP60F0DPE

    RJP60F4DPQ-A0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F4DPQ-A0 R07DS0675EJ0100 PRSS0003ZH-A O-247A) RJP60F4DPQ-A0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A

    RJU60C

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F7DPK R07DS1001EJ0100 PRSS0004ZE-A RJU60C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching


    Original     		PDF RJP60F5DPK R07DS0757EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching


    Original     		PDF RJP60F5DPK R07DS0757EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A

    PRSS0003ZA-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A PRSS0003ZA-A

    rjp60f4

    Abstract: RJP60F
    Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A rjp60f4 RJP60F

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		PDF RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1