RJP60F4 Search Results

RJP60F4 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP60F4DPM-00#T1		Renesas Electronics Corporation	IGBT for IH, TO-3PFM, /Tube

RJP60F4 Price and Stock

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Renesas Electronics Corporation RJP60F4DPM-00-T1 IGBT TRENCH 600V 60A TO3PFM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60F4DPM-00-T1	Tube	78		1	1 $5.49 10 $3.854 100 $3.854 1000 $3.854 10000 $3.854	Buy Now
Renesas Electronics Corporation RJP60F4DPM-00#T1 IGBT TRENCH 600V 60A TO3PFM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Renesas Electronics America	RJP60F4DPM-00#T1	Tube	78		1	1 $5.49 10 $3.854 100 $3.854 1000 $3.854 10000 $3.854	Buy Now

RJP60F4 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJP60F4DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM		Original	PDF
RJP60F4DPQ-A0#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A		Original	PDF

RJP60F4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJP60F4DPQ-A0 Abstract: No abstract text available Text: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F4DPQ-A0 R07DS0675EJ0100 PRSS0003ZH-A O-247A) RJP60F4DPQ-A0
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A
rjp60f4 Abstract: RJP60F Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A rjp60f4 RJP60F
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1