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    RJH60D2 Search Results

    RJH60D2 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJH60D2DPP-E0#T2 Renesas Electronics Corporation IGBT for Inverter Applications Visit Renesas Electronics Corporation
    RJH60D2DPP-M0#T2 Renesas Electronics Corporation IGBT for Inverter Applications, TO-220FL, /Tube Visit Renesas Electronics Corporation
    RJH60D2DPE-00#J3 Renesas Electronics Corporation IGBT for Inverter Applications, LDPAK(S)-(1), /Embossed Tape Visit Renesas Electronics Corporation
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    RJH60D2 Price and Stock

    Renesas Electronics Corporation RJH60D2DPP-M0-T2

    IGBT TRENCH 600V 25A TO220FL
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    DigiKey RJH60D2DPP-M0-T2 Tube
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    Rochester Electronics LLC RJH60D2DPP-E0-T2

    RJH60D2DPP - IGBT 600V 25A
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    DigiKey RJH60D2DPP-E0-T2 Bulk 114
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    Renesas Electronics Corporation RJH60D2DPE-00-J3

    IGBT TRENCH 600V 25A LDPAK
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    DigiKey RJH60D2DPE-00-J3 Digi-Reel 1
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    RJH60D2DPE-00-J3 Cut Tape 1
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    RJH60D2DPE-00-J3 Reel
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    Renesas Electronics Corporation RJH60D2DPP-E0#T2

    Trans IGBT Chip N-CH 600V 25A 34W 3-Pin(3+Tab) TO-220FP Tube
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    Verical RJH60D2DPP-E0#T2 28,209 126
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    Rochester Electronics RJH60D2DPP-E0#T2 28,209 1
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    Renesas Electronics Corporation RJH60D2DPPM0T2

    N CHANNEL SILICON IGBT Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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    ComSIT USA RJH60D2DPPM0T2 200
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    RJH60D2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60D2DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 63W LDPAK Original PDF
    RJH60D2DPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 27.2W TO220FL Original PDF

    RJH60D2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjh60d2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPP-M0 600V - 12A - IGBT Application: Inverter R07DS0160EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPP-M0 R07DS0160EJ0400 PRSS0003AF-A O-220FL) rjh60d2

    rjh60d2

    Abstract: PRSS0003AF-A TO-220FL TO220FL RJH60D2DPP-M0 RJH60 RJH60D2DPP-M0#T2
    Text: Preliminary RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0003AF-A Package name: TO-220FL C 1. Gate


    Original     		PDF RJH60D2DPP-M0 REJ03G1841-0100 PRSS0003AF-A O-220FL) rjh60d2 PRSS0003AF-A TO-220FL TO220FL RJH60D2DPP-M0 RJH60 RJH60D2DPP-M0#T2

    rjh60d2

    Abstract: RJH60 rjh60d
    Text: Preliminary Datasheet RJH60D2DPE R07DS0159EJ0200 Previous: REJ03G1842-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPE R07DS0159EJ0200 REJ03G1842-0100) PRSS0004AE-B t9044 rjh60d2 RJH60 rjh60d

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPE 600V - 12A - IGBT Application: Inverter R07DS0159EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPE R07DS0159EJ0400 PRSS0004AE-B

    rjh60d2

    Abstract: RJH60D2DPE
    Text: Preliminary RJH60D2DPE Silicon N Channel IGBT Application: Inverter REJ03G1842-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK (S -(1) ) C


    Original     		PDF RJH60D2DPE REJ03G1842-0100 PRSS0004AE-B rjh60d2 RJH60D2DPE

    rjh60d2

    Abstract: RJH60D2DPP-M0 RJH60D2DPP-M0#T2
    Text: Preliminary Datasheet RJH60D2DPP-M0 600V - 12A - IGBT Application: Inverter R07DS0160EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPP-M0 R07DS0160EJ0400 PRSS0003AF-A O-220FL) rjh60d2 RJH60D2DPP-M0 RJH60D2DPP-M0#T2

    rjh60d2

    Abstract: RJH60D2DPP-M0 RJH60D2DPP PRSS0003AF-A R07DS0160EJ0200 RJH60D2DPP-M0#T2
    Text: Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0200 Previous: REJ03G1841-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPP-M0 R07DS0160EJ0200 REJ03G1841-0100) PRSS0003AF-A O-220FL) rjh60d2 RJH60D2DPP-M0 RJH60D2DPP PRSS0003AF-A R07DS0160EJ0200 RJH60D2DPP-M0#T2

    rjh60d2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0160EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPP-M0 R07DS0160EJ0300 PRSS0003AF-A O-220FL) rjh60d2

    rjh60d2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPE Silicon N Channel IGBT Application: Inverter R07DS0159EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPE R07DS0159EJ0300 PRSS0004AE-B rjh60d2

    RJH60D2DPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPE 600V - 12A - IGBT Application: Inverter R07DS0159EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPE R07DS0159EJ0400 PRSS0004AE-B RJH60D2DPE

    R07DS0894EJ0100

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPP-E0 600V - 12A - IGBT Application: Inverter R07DS0894EJ0100 Rev.1.00 Nov 01, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D2DPP-E0 R07DS0894EJ0100 PRSS0003AG-A O-220FP)

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		PDF RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK