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    FLK022 Search Results

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    FLK022 Price and Stock

    FUJITSU Limited FLK022WG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK022WG 24
    • 1 $52.004
    • 10 $52.004
    • 100 $44.2034
    • 1000 $44.2034
    • 10000 $44.2034
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    FLK022WG 3
    • 1 $62.4048
    • 10 $62.4048
    • 100 $62.4048
    • 1000 $62.4048
    • 10000 $62.4048
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    Fuji Electric Co Ltd FLK022WG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK022WG 4
    • 1 $62.4048
    • 10 $59.2846
    • 100 $59.2846
    • 1000 $59.2846
    • 10000 $59.2846
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    Fuji Electric Co Ltd FLK022WG-HL/205

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FLK022WG-HL/205 115
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    FLK022 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLK022WG Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLK022WG Unknown FET Data Book Scan PDF
    FLK022XP Unknown FET Data Book Scan PDF
    FLK022XV Unknown FET Data Book Scan PDF

    FLK022 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLK022WG

    Abstract: FLK022W FLK022
    Text: FLK022WG X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general


    Original     		PDF FLK022WG FLK022WG FLK022W FLK022

    FLK022

    Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
    Text: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is


    OCR Scan     		PDF FLK022XP, FLK022XV FLK022XV FLK022XP FLK022 GaAs FET HEMT Chips FLK022XP

    CQ 765

    Abstract: CQ 637 CQ 818 FLK022
    Text: FLK022XP : FLK022XV GaAs F ET u n dH E M T Chips ELECTRICAL CHARACTERISE CS Amb ent Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions 100 150 mA - 50 - mS -1.0 -2.0 -3.5 V -5 - - V 23 24 - dBm 6 7 - dB - 32 - % VdS = 5V, Ids = 65mA


    OCR Scan     		PDF FLK022XP FLK022XV 10pcs. 25jim CQ 765 CQ 637 CQ 818 FLK022

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


    OCR Scan     		PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151

    FLK022XV

    Abstract: No abstract text available
    Text: FLK022XP, FLK022XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a pow er G aAs FET that is


    OCR Scan     		PDF FLK022XP, FLK022XV FLK022XV FLK022XP

    FLK022WG

    Abstract: 17laD FLK022
    Text: FLK022WG X- Ku B a n d Power GaAs I E Is ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 1.875 w Total Power Dissipation Tc = 25°C Pt Storage Temperature


    OCR Scan     		PDF FLK022WG 2000Q FLK022WG 17laD FLK022

    Untitled

    Abstract: No abstract text available
    Text: FLK022WG FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLK022WG FLK022WG

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


    OCR Scan     		PDF FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP fsx52 FUJITSU MICROWAVE XP 215 FLK202 FSX51 FLC151

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    FLK202MH-14

    Abstract: FLK052WG
    Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH


    OCR Scan     		PDF FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG