FLK012W Search Results

FLK012W Price and Stock

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FUJITSU Limited FLK012WF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FLK012WF		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	FLK012WF		24			1 $41.86 10 $39.767 100 $37.674 1000 $37.674 10000 $37.674	Buy Now
Fuji Electric Co Ltd FLK012WF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLK012WF		12			1 $50.232 10 $47.7204 100 $45.2088 1000 $45.2088 10000 $45.2088	Buy Now
	FLK012WF		4			1 $50.232 10 $50.232 100 $50.232 1000 $50.232 10000 $50.232	Buy Now

FLK012W Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLK012WF		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLK012WF		Unknown	FET Data Book		Scan	PDF

FLK012W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FLK012WF Abstract: No abstract text available Text: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general	Original	PDF	FLK012WF FLK012WF
FLK012 Abstract: k d 998 0 Text: FLK012WF X - k i i B a n d P o w e r it/A s I E I s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C Symbol (tern Condition Rating Ufirit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 1.15 w Total Power B N p M Pt Storage Temperature	OCR Scan	PDF	FLK012WF 3000Q. Out99 FLK012 k d 998 0
Untitled Abstract: No abstract text available Text: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general	OCR Scan	PDF	FLK012WF FLK012WF
FLC081XP Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A	OCR Scan	PDF	FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	PDF	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
FLK202MH-14 Abstract: FLK052WG Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <tB) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH	OCR Scan	PDF	FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG