Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLK052W Search Results

    SF Impression Pixel

    FLK052W Price and Stock

    Fuji Electric Co Ltd FLK052WG

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK052WG 3
    • 1 $100.0416
    • 10 $95.0395
    • 100 $95.0395
    • 1000 $95.0395
    • 10000 $95.0395
    		Buy Now

    FUJITSU Semiconductor Limited FLK052WG

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK052WG 1
    • 1 $132.3632
    • 10 $132.3632
    • 100 $132.3632
    • 1000 $132.3632
    • 10000 $132.3632
    		Buy Now

    FLK052W Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLK052WG Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLK052WG Unknown FET Data Book Scan PDF

    FLK052W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLK052WG

    Abstract: No abstract text available
    Text: FLK052WG X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general


    Original     		PDF FLK052WG FLK052WG

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    Untitled

    Abstract: No abstract text available
    Text: FLK052WG Film ali rU JIl X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLK052WG FLK052WG

    FLK052

    Abstract: FLK052WG
    Text: FLK052 WG X-kii B and Power iaAs I E I s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Condition S igillo! Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 3.75 w -65 to +175 °c °c Total Power Dissipation Tc = 25°C


    OCR Scan     		PDF FLK052 1000Q Source-151 FLK052WG

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    FLK202MH-14

    Abstract: FLK052WG
    Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH


    OCR Scan     		PDF FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG