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    D2S DIODE Search Results

    D2S DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    D2S DIODE Price and Stock

    Picker Components PC775-1A-12C-D2-X

    Automotive Relay - 1FormA - SPST - 75A - Coil: 12VDC - Dual Internal Diodes - Dust Cover - IP54 - Screw Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PC775-1A-12C-D2-X 117
    • 1 $66.74
    • 10 $63.4
    • 100 $23.19
    • 1000 $16.39
    • 10000 $16.39
    		Buy Now

    Picker Components PC775-1A-24C-D2-X

    Automotive Relay - 1FormA - SPST - 75A - Coil: 24VDC - Dual Internal Diodes - Dust Cover - IP54 - Screw Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PC775-1A-24C-D2-X 45
    • 1 $66.74
    • 10 $63.4
    • 100 $23.19
    • 1000 $16.39
    • 10000 $16.39
    		Buy Now

    Altech Corporation CDL4U(E)D2

    Altech CDL4U(E)D2 Terminal Block, Feed-Thru, Arc Suppression w/Diode Circuit, 6mm, 54 x 55.5, D2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CDL4U(E)D2
    • 1 -
    • 10 $4.06
    • 100 $3.23
    • 1000 $2.82
    • 10000 $2.67
    		Buy Now

    Picker Components PC775-1A-6C-D2-X

    Automotive Relay - 1FormA - SPST - 75A - Coil: 6VDC - Dual Internal Diodes - Dust Cover - IP54 - Screw Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PC775-1A-6C-D2-X
    • 1 $66.74
    • 10 $63.4
    • 100 $23.19
    • 1000 $16.39
    • 10000 $16.39
    		Buy Now

    Altech Corporation CXDL2.5(E)D2

    DIN Rail Terminal Block with Electronic Components - Electronic series spring clamp double level Terminal Blocks with built in diodes and LED. - 24-12 AWG / 0.2-2.5 mm4 - 600V / 1000V - 20 A / 24 A - Grey
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CXDL2.5(E)D2
    • 1 -
    • 10 -
    • 100 $3.59
    • 1000 $3.14
    • 10000 $2.94
    		Buy Now

    D2S DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d2s diode

    Abstract: d2s 28 diode D2S-5D diode d2s D2S-01
    Text: Subminiature Basic Switch D2S Subminiature Switch with Superb Flux Resistance One-piece terminal construction to keep out flux. High operating-position accuracy ±0.25 mm enables easy peripheral design and positioning. Use of pin plunger also allows horizontal operation.


    Original     		PDF

    DIODE D3S 90

    Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
    Text: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16


    Original     		PDF O-252-2L) O-252-3L) O-263/D2PAK O-263/D2PAK O-268 DIODE D3S 90 BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode

    Transistor C1173

    Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
    Text: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF inR214 R0402 R0603 3314J Transistor C1173 L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161

    D3S 50

    Abstract: OA61 AEG Diode
    Text: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal


    OCR Scan     		PDF 005145b I-10m lF-lR-10mA -dlF/dt-15A/ns D3S 50 OA61 AEG Diode

    43DSS71

    Abstract: 1N4245 1N4246 1N4247 1N4248 1N4249
    Text: HA RR IS S E n i C O N D S E CT OR i l i H u s e m i c o n d u c t o r ; a r r is bflE D • 43 D2S 71 □ G S G 2 S ti DTT ■ HAS 1N4245, 1N4246, 1N4247 1N4248, 1N4249 1Ag200V ■ 1000V DlOdSS December 1993 Package Features JEDEC STYLE D0-204 TOP VIEW • Hlgh-Temperature Metallurgically Bonded, No Com­


    OCR Scan     		PDF 1N4245, 43DSS71 1N4246, 1N4247 1N4248, 1N4249 MIL-STD-19500 C/10s/ 1N4245 1N4246 1N4248 1N4249

    D2S 56

    Abstract: OA61 S1600 sj51
    Text: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175


    OCR Scan     		PDF DGDT33S -62J5 S1600 D2S 56 OA61 sj51

    AX078

    Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
    Text: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator


    OCR Scan     		PDF 15ffC AX078 J533-1 AX078 MARKING JM 251C 25T160 d2s4m D2S4 122T

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C


    OCR Scan     		PDF AX078 150TC J533-1

    TO-264-aa

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30


    OCR Scan     		PDF IXFK90N20Q IXFK90N20QS O-264 O-264AA TO-264-aa

    d2s diode

    Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
    Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:


    OCR Scan     		PDF 15ffC AX078 J533-1) d2s diode D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078

    Untitled

    Abstract: No abstract text available
    Text: HM Th r 1 i ^ [T=n January 7, 1998 RECTIFIER’ 1kV’ 2-7A’ 150ns TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE • 3PFR0 QUICK REFERENCE DATA V r = 1000V = 2.7A • If • trr = 150nS


    OCR Scan     		PDF 150ns

    d2s diode

    Abstract: IXTH50N20
    Text: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient


    OCR Scan     		PDF 50N20 to150 O-247 T0-204 T0-204 O-247 IXTM50N20 d2s diode IXTH50N20

    d2s diode

    Abstract: d2s 28 diode BU2507DX
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television


    OCR Scan     		PDF BU2507DX d2s diode d2s 28 diode BU2507DX

    25t65

    Abstract: marking code riy
    Text: Schottky Barrier Diode Axial Diode Wtm D2S6M P a cka g e OUTLINE U n it-m m : A X 0 7 8 W e ig h t 0 .3 8 g T y p 60V 2A Feature • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating (!> Main Use —M— M a rk in g • DC/DC Converter


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ELEK {LINEAR} b2 D EI bSM'ïôSb DGG4DCI4 S | •jz^-25’ INDUSTRY STANDARD X MITSUBISHI LIN^ R M2001 SEMICONDUCTORS 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M2001 7-channel sink driver consists of 14 NPN transistors


    OCR Scan     		PDF M2001 500mA M2001

    BUK638-500B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		PDF BUK638-500B

    Untitled

    Abstract: No abstract text available
    Text: LF2246 11 x 10-bit Image Filter DESCRIPTION FEATURES □ 40 MHz Data and Coefficient Input and Computation Rate □ Four 11 x 10-bit Multipliers with Individual Data and Coefficient Inputs and a 25-bit Accumulator □ User-Selectable Fractional or Integer Two's Complement Data


    OCR Scan     		PDF LF2246 10-bit 25-bit TMC2246 120-pin LF2246 25-bit

    nf 931 diode

    Abstract: No abstract text available
    Text: OIXYS HiPerFET MOSFET Module VMO 650-01 F VDSS = 100 V = 690 A D25 RDS on = 1.8 mQ N-Channel Enhancement Mode G J P relim in ary Data é KS Symbol v „ ss Test Conditions Maximum Ratings Tj = 2 5 °C tO l5 0 °C 100 V Tj = 25°C to 150°C; RGS = 10 k£2


    OCR Scan     		PDF

    C246

    Abstract: IXTK33N50 C-246
    Text: g ix Y s High Current MegaMOS FET IXTK33N50 V DSS D cont p DS(on) = 500 V = 33 A = 0.17 £2 N-Channel Enhancement Mode Preliminary data Symbol Test conditions vDSS Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS= 1.0 Vos v QSM Maximum ratings M £i Continuous


    OCR Scan     		PDF IXTK33N50 O-264 C2-46 1XTK33NS0 C2-47 C246 IXTK33N50 C-246

    nf 931 diode

    Abstract: st c316
    Text: VMO 380-02 F v D S S MegaMOS FET Module ^D25 P DS on = 200 V = 390 A = 4.6 mQ N-Channel Enhancement Mode Preliminary data Sym bol Test Conditions Maximum Ratings V OSS Tj = 2 5 °C to 1 5 0 °C 200 V V OGR Tj = 25°C to 150°C; RGS = 10 kS2 200 V V os Continuous


    OCR Scan     		PDF C3-16 nf 931 diode st c316

    Untitled

    Abstract: No abstract text available
    Text: Dual Power M O SFET Module VM K 90-02T2 VD S S D 25 45 Common-Source connected N-Channel Enhancement Mode 1 2 3 67 Symbol Test Conditions Maximum Ratings Voss T J = 25°C to 150°C 200 V V» T j = 25°C to 150°C; R GS = 6.8 k n 200 V V« Continuous ±20 V


    OCR Scan     		PDF 90-02T2 O-240 90-02T2

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power M OSFETs Single Die M OSFET IXFN 280N07 VDSS ^D25 D DS on 'r r N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Tj = 25°Cto150°C 70 V T,J = 25 °C to 15 0 °C ;’ R~. = 1 M fl öS 70


    OCR Scan     		PDF IXFN280N07 Cto150 OT-227 E153432

    IXTN79N20

    Abstract: No abstract text available
    Text: IXTN79N20 VDSS MegaMOS FET D25 RDS on = 200 V = 85 A = 25 mil N-Channel Enhancement Mode Sym bol V ¥ dss Test C onditions Maximum Ratings Tj = 25°C to150°C 200 V Tj = 25°C to 150°C; RGS = 10 k£S 200 V Vas Continuous ±20 V Vas« T ransient ±30 V


    OCR Scan     		PDF IXTN79N20 to150 OT-227 C2-19

    Untitled

    Abstract: No abstract text available
    Text: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFX 90N30 IXFK 90N30 V A V„ss = 300 >« = 90 ^D S on “ Single MOSFET Die ^ m fl trr <250 ns 09 Symbol Test C onditions V oss Tj =25°Cto150°C T, =25°C to150°C ; RGS= 1 Mi2 300 300 V V Continuous


    OCR Scan     		PDF 90N30 90N30 Cto150 to150