Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    90N30 Search Results

    SF Impression Pixel

    90N30 Price and Stock

    IXYS Corporation IXFK90N30

    MOSFET N-CH 300V 90A TO-264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK90N30 Tube 25
    • 1 -
    • 10 -
    • 100 $11.8808
    • 1000 $11.8808
    • 10000 $11.8808
    		Buy Now
    Mouser Electronics IXFK90N30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Bristol Electronics IXFK90N30 123
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IXYS Corporation IXFX90N30

    MOSFET N-CH 300V 90A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX90N30 Tube 30
    • 1 -
    • 10 -
    • 100 $10.46333
    • 1000 $10.46333
    • 10000 $10.46333
    		Buy Now
    Mouser Electronics IXFX90N30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IXYS Corporation IXFN90N30

    MOSFET N-CH 300V 90A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN90N30 Tube 10
    • 1 -
    • 10 $20.151
    • 100 $20.151
    • 1000 $20.151
    • 10000 $20.151
    		Buy Now
    Mouser Electronics IXFN90N30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Bristol Electronics IXFN90N30 10
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IXYS Corporation IXFR90N30

    MOSFET N-CH 300V 75A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR90N30 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC FGPF90N30

    IGBT, 300V, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FGPF90N30 Tube 290
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.04
    • 10000 $1.04
    		Buy Now
    Find more 90N30 price and stock on Findchips.com

    90N30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient


    Original     		PDF 90N30 90N30 ID104 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous


    Original     		PDF 90N30 ID104 247TM 125OC 728B1

    90n30

    Abstract: No abstract text available
    Text: IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 = 300 V = 90 A Ω = 33 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns G Preliminary Data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 90N30 728B1 90n30

    Untitled

    Abstract: No abstract text available
    Text: IXFR 90N30 HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 300 V ID25 = 75 A RDS on = 33 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 90N30 ISOPLUS247TM 247TM E153432

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 90N30 VDSS ID25 RDS on = 300 V = 90 A = 33 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 90N30 OT-227

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET = 300 V = 90 A = 33 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V


    Original     		PDF 90N30 OT-227

    90N30

    Abstract: 125OC ID104
    Text: HiPerFETTM Power MOSFETs IXFX 90N30 IXFK 90N30 VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous


    Original     		PDF 90N30 ID104 247TM 125OC 728B1 90N30 125OC ID104

    Untitled

    Abstract: No abstract text available
    Text: IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET = 300 V = 90 A Ω = 33 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns G Preliminary Data Symbol VDSS ID25 S Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 90N30 OT-227 E153432 728B1

    90N30

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 90N30 IXFK 90N30 VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A = 33 mW trr £ 250 ns Maximum Ratings PLUS 247TM Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 90N30 90N30 ID104 247TM O-264

    IXFN 360

    Abstract: IXFN90N30
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET 90N30 VDSS ID25 RDS on = 300 V = 90 A = 33 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN90N30 OT-227 E153432 IXFN 360 IXFN90N30

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    0/PDP-2N-1000

    Abstract: No abstract text available
    Text: 90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGP90N30 O-220 FGP90N30TU 0/PDP-2N-1000

    Untitled

    Abstract: No abstract text available
    Text: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFX 90N30 IXFK 90N30 V A V„ss = 300 >« = 90 ^D S on “ Single MOSFET Die ^ m fl trr <250 ns 09 Symbol Test C onditions V oss Tj =25°Cto150°C T, =25°C to150°C ; RGS= 1 Mi2 300 300 V V Continuous


    OCR Scan     		PDF 90N30 90N30 Cto150 to150

    Untitled

    Abstract: No abstract text available
    Text: aixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 90N30 Test Conditions V VDQH 300 V VQS VGSM Continuous i20 V Transient 130 V ^D25 Tc =25°C 90 A <OM Tc = 25° C, pulse width limited by TJM 360 A Tc =25°C 90 A Tc =25°C


    OCR Scan     		PDF IXFN90N30 Cto150 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc


    OCR Scan     		PDF 90N30 PLUS247â

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50