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Infineon Technologies AG BSC350N20NSFDATMA1 MOSFET N-CH 200V 35A TDSON-8-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSC350N20NSFDATMA1	Digi-Reel	8,540		1	1 $3.92 10 $2.574 100 $3.92 1000 $1.37967 10000 $1.37225	Buy Now
	BSC350N20NSFDATMA1	Cut Tape	8,540		1	1 $3.92 10 $2.574 100 $3.92 1000 $1.37967 10000 $1.37225	Buy Now
	BSC350N20NSFDATMA1	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $1.37225	Buy Now
Avnet Americas	BSC350N20NSFDATMA1	Reel	5,000	16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $1.37225	Buy Now
Mouser Electronics	BSC350N20NSFDATMA1		7,469			1 $2.84 10 $2.08 100 $1.58 1000 $1.38 10000 $1.35	Buy Now
Newark	BSC350N20NSFDATMA1	Cut Tape	5,070		5	1 $3.34 10 $2.55 100 $1.9 1000 $1.74 10000 $1.74	Buy Now
Bristol Electronics	BSC350N20NSFDATMA1		894			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	BSC350N20NSFDATMA1	Cut Tape	4,980			1 $1.66 10 $1.52 100 $1.48 1000 $1.47 10000 $1.34	Buy Now
EBV Elektronik	BSC350N20NSFDATMA1			17 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	BSC350N20NSFDATMA1		87,600			1 - 10 - 100 $1.7116 1000 $1.4356 10000 $1.4356	Buy Now
ROHM Semiconductor RCX450N20 MOSFET N-CH 200V 45A TO220FM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RCX450N20	Bulk	425		1	1 $4.02 10 $2.639 100 $4.02 1000 $1.4136 10000 $1.3625	Buy Now
Mouser Electronics	RCX450N20		443			1 $3.35 10 $2.39 100 $1.84 1000 $1.45 10000 $1.36	Buy Now
TME	RCX450N20				1	1 $3.07 10 $2.12 100 $1.58 1000 $1.27 10000 $1.27	Get Quote
Avnet Asia	RCX450N20			24 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	RCX450N20			37 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip1Stop	RCX450N20	Bulk	167			1 $1.84 10 $1.27 100 $0.929 1000 $0.929 10000 $0.929	Buy Now
Littelfuse Inc IXTQ50N20P MOSFET N-CH 200V 50A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ50N20P	Tube	354		1	1 $5.36 10 $5.36 100 $3.23667 1000 $2.49388 10000 $2.49388	Buy Now
Newark	IXTQ50N20P	Bulk			300	1 - 10 - 100 $3.56 1000 $2.86 10000 $2.66	Buy Now
Littelfuse Inc IXTA50N20P MOSFET N-CH 200V 50A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA50N20P	Tube	297		1	1 $5.04 10 $5.04 100 $5.04 1000 $2.30788 10000 $2.30788	Buy Now
Littelfuse Inc IXTP50N20P MOSFET N-CH 200V 50A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP50N20P	Tube	268		1	1 $5.07 10 $5.07 100 $5.07 1000 $2.3265 10000 $2.3265	Buy Now

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50N20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient	Original	PDF	50N20 O-247 O-204 O-247
IXTP50N20PM Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C	Original	PDF	50N20PM O-220 50N20P 02-16-06-E IXTP50N20PM
50N20P Abstract: 50n20 50n2 Text: PolarHTTM Power MOSFET IXTA 50N20P IXTP 50N20P IXTQ 50N20P VDSS ID25 = 200 V = 50 A ≤ 60 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	PDF	50N20P O-220 50N20P 50n20 50n2
50N20P Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTQ 50N20P IXTA 50N20P IXTP 50N20P = 200 V = 50 A Ω = 60 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	50N20P O-220 065B1 728B1 123B1 728B1 50N20P
50n20 Abstract: 42N20 Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient	Original	PDF	50N20 O-247 O-204 O-247 O-204 50n20 42N20
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	PDF	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 O-268 dv/00
IXFM50N20 Abstract: 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/50N20 IXFH/IXFT58N20 VDSS ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	PDF	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 IXFM50N20 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
50N20 Abstract: 42N20 DIODE N20 IXFH58N20 58N20 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous	Original	PDF	42N20 50N20 58N20 O-204AE 50N20 42N20 DIODE N20 IXFH58N20 58N20
50n20 Abstract: IXFM50N20 Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	PDF	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 42N20 50N20 58N20 IXFM50N20
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	PDF	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B
d2s diode Abstract: IXTH50N20 Text: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient	OCR Scan	PDF	50N20 to150 O-247 T0-204 T0-204 O-247 IXTM50N20 d2s diode IXTH50N20

42n20 Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083 Text: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family	OCR Scan	PDF	42N20 50N20 50N20 58N20 ixys ml 075 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	PDF	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
58N20 Abstract: IXFH58N20 50n20 Text: EUXYS VDSS HiPerFET Power MOSFETs IXFH/IXFT 50N20 IXFH 58N20 200 V 200 V Symbol Test Conditions Maximum Ratings VDSS T j =25°C to150°C 200 V V TCR Tj = 25° C to 150° C; RQS= 1 200 V Vos Continuous ±20 V v GSM Transient ±30 V 50 58 200 232 50 58 A	OCR Scan	PDF	50N20 58N20 to150 58N20 O-247 IXFH58N20
1534F Abstract: 50n20 Text: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous	OCR Scan	PDF	42N20 50N20 50N20 O-247 O-204 O-247 1534F
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	PDF	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
50N15 Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet Text: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 \| I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S 50N20, 15 50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)	OCR Scan	PDF	IXTH50N15 IXTH50N20 IXTM50N15 IXTM50N20 00D3b5 IXTH50N20, IXTM50N20, 50-200V, 50N15 TL 1074 CT megamos 46 08 09 6 megamos 48 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
SMD diode N20 Abstract: IXFH58N20 30n20 Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2	OCR Scan	PDF	IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
SHD2254 Abstract: shD2251 Text: SENSITRON SEMICONDUCTOR 1995 SHORTFORM CATALOG N-CHANNEL HERMETIC POWER MOSFETS TO-254, TO-257 TYPE NUMBER BVd SS DRAIN TO SOURCE BREAKDOWN VOLTAGE (VOLTS) •d CONTINUOUS DRAIN CURRENT (AMPS) Pd MAXIMUM POWER DISSIPATION (WATTS) h d s (0N) STATIC DRAIN TO	OCR Scan	PDF	O-254, O-257) IRF044 IRF140 75N10 IRF240 50N20 IRF340 IRF440 24N50 SHD2254 shD2251

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50N20 Search Results

50N20 Price and Stock

Infineon Technologies AG BSC350N20NSFDATMA1

ROHM Semiconductor RCX450N20

Littelfuse Inc IXTQ50N20P

Littelfuse Inc IXTA50N20P

Littelfuse Inc IXTP50N20P

50N20 Datasheets Context Search

Untitled

IXTP50N20PM

50N20P

50N20P

50n20

IXTD08N100P-1A

Untitled

IXFM50N20

C1162

50N20

50n20

sd 20n60

75N1

d2s diode

42n20

11n80

58N20

1534F

mosfet 4400

50N15

40n80

SMD diode N20

ixys ixfn 55n50

SHD2254