ZX47-40-S
Abstract: ZX47-40 HN1173 ZX47-40LN-S zx4740s
Text: Coaxial Power Detector 50Ω, -40dBm to +20dBm, ZX47-40+ ZX47-40LN+ 10 to 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • Low Noise DC Output for ZX47-40LN+,
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-40dBm
20dBm,
ZX47-40+
ZX47-40LN+
20mVp-p
10MHz
120mA
27dBm
HN1173
ZX47-40-S
ZX47-40
HN1173
ZX47-40LN-S
zx4740s
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FLL21E010MK
Abstract: R104-5
Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E010MK
40dBm
17GHz
2200MHz
FLL21E010MK
R104-5
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NF 841
Abstract: NF 831 035910
Text: 821 - 851 MHz Wireless Amplifier QBS-359 Parameters Guaranteed Guaranteed 25°C • 821-851 MHz frequency band • NF typically < 1dB overtemp • High 3rd OIP typically 40dBm overtemp +5 to +55°C 821 - 851 44.0 ± 0.5 +0.5/-0.5 1.0 1.0 55 55 1.5:1 1.5:1
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QBS-359
40dBm
E52-19437)
A91-0359
NF 841
NF 831
035910
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FLL21E010MK
Abstract: r1045
Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E010MK
40dBm
17GHz
2200MHz
FLL21E010MK
r1045
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Untitled
Abstract: No abstract text available
Text: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features Single Voltage: 2.5V to 5.0V 40dBm P1dB 30dB Isolation at 2GHz
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RFSW8000
6500MHz
40dBm
11a/n
RFSW8000
4500MHz
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Untitled
Abstract: No abstract text available
Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 12.5dB Gain at 2.0GHz +23dBm P1dB 3.0dB Typical Noise Figure at
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RF3315Broadband
RF3315
300MHz
40dBm
23dBm
DS050318
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GHzS11
Abstract: 7824 TO-3 package
Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers
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FLL21E040IK
40dBm
2200MHz
FLL21E040IK
GHzS11
7824 TO-3 package
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WP-22
Abstract: No abstract text available
Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz
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RT240J
RT240
50MHz
40dBm
43dBm
900MHz
IMT-2000
WP-22
WP-12
RT240
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AE617
Abstract: 63dBc
Text: E-pHEMT MMIC AE617 Product Features Application • Small size • 5MHz-1000MHz • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost • Low Noise Figure • -63dBc CSO 79 Channels @ +40dBmV/ch
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AE617
5MHz-1000MHz
-63dBc
40dBmV/ch
-65dBc
OT-89
AE617
63dBc
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Untitled
Abstract: No abstract text available
Text: HE315 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 23 Features 21 Frequency Range: 1～110MHz(typ) l Gain: 20dB(typ) l IP3(out): 40dBm(typ) l l 27dBm Typical 1dB Compression Standard Hermetic Package SP-1A
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HE315
110MHz
40dBm
27dBm
15dBm
3300pF.
30dBm
18VDC)
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microstrip
Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
Text: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT89AH
FPD750SOT89
22dBm
40dBm
11dBm
100mA
FPD750SOT89.
microstrip
Transistor Z14
RO4003
w20220
microstrip board
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Untitled
Abstract: No abstract text available
Text: TGA2216-SM 0.1 – 3.0GHz 10W GaN Power Amplifier Applications • Commercial and military radar Communications Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 0.1 – 3.0GHz PSAT: >40dBm at PIN = 27dBm
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TGA2216-SM
40dBm
27dBm
35dBm
360mA,
TGA2216-SM
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Untitled
Abstract: No abstract text available
Text: TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram Frequency Range: 2.7 – 3.7GHz PSAT: 40dBm at 25V PAE: 54% Small Signal Gain: 33dB Bias: VD = 25-32V CW or Pulsed , IDQ = 175mA, VG
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TGA2583
40dBm
5-32V
175mA,
TGA2583
TQGaN25)
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ZX47-40LN-S
Abstract: ZX47-40-S ZX47-40LN HN1173 ZX47-40 zx4740s
Text: Coaxial ZX47-40+ ZX47-40LN+ Power Detector 50Ω, -40dBm to +20dBm, 10 to 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • Low Noise DC Output for ZX47-40LN+,
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ZX47-40+
ZX47-40LN+
-40dBm
20dBm,
20mVp-p
10MHz
120mA
27dBm
HN1173
ZX47-40LN-S
ZX47-40-S
ZX47-40LN
HN1173
ZX47-40
zx4740s
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7824 TO-3 package
Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,
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FLL21E040IK
40dBm
2200MHz
FLL21E040IK
7824 TO-3 package
high power FET transistor s-parameters
MA 7824. to-3
Eudyna Devices power amplifiers
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RFM70
Abstract: RFM70-S BEKEN RFM70-D wack PTX 631 PID diagram
Text: RFM70 V1.0 Low Power High Performance 2.4 GHz GFSK Transceiver Module Features 2400-2483.5 MHz ISM band operation Support 1 and 2 Mbps air data rate Programmable output power -40dBm to 5dBm Low power consumption Variable payload length from 1 to 32bytes
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RFM70
-40dBm
32bytes
RFM70
RFM70-S
BEKEN
RFM70-D
wack
PTX 631
PID diagram
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RT550PD
Abstract: RT550 RFHIC
Text: Power Transistor RT550PD Product Features Application • High Output Power P1dB = 40dBm typ @2.3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.3GHz • High Linearity • Hermetically sealed package • Competitive Price • Repeater • RF Sub-Systems
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RT550PD
40dBm
WP-22
RT550PD
300MHz
RT550
RFHIC
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ZX47-40-S
Abstract: No abstract text available
Text: Coaxial Power Detector 50Ω - 40dBm to +20dBm, ZX47-40+ 10 - 8000 MHz Features Maximum Ratings O Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power O -40 C to 85 C -55OC to 100OC 5.7V 120mA
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40dBm
20dBm,
-55OC
100OC
120mA
27dBm
ZX47-40+
HN1173
ZX47-40-S+
ZX47-40-S
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ED-4701
Abstract: FLL21E045IY
Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,
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FLL21E045IY
40dBm
2170MHz
FLL21E045IY
ED-4701
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QQ-S-698
Abstract: 107D 204C 213B VS-25
Text: im i VS-25 High Isolation RF Switch 50-500 MHz SP2T TYPICAL PERFORMANCE GUARANTEED MINIMUM PERFORMANCE DATA Impedence: 50 ohm s 3rd O rder Intercept Point: +40dBm min on condition Overall Frequency Range: 50 -5 0 0 M H 7 Frequency Bands in MHz: DESCRIPTION
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VS-25is
VS-25
40dBm
MIL-STD-1276.
MIL-G-45204.
QQS-698.
QQN-290.
QQ-S-698
107D
204C
213B
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S9G73
Abstract: No abstract text available
Text: MI CROWAVE P O WE R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pr I i m i n a r y •HIGH POWER «NON-MATCHED TYPE P1dB=40dBm ■ HIGH G AI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB
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S9G73
40dBm
S9G73
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Untitled
Abstract: No abstract text available
Text: MI CROWAVE P O W E R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pro I •HI GH POWER «NON-MATCHED imi nary TYPE P1dB=40dBm ■ HIGH GAI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB
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S9G73
40dBm
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Untitled
Abstract: No abstract text available
Text: RF AMPLIFIER MODEL TR9772 A v a ila b le as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +46dBm Typ. Second Order Two Tone Intercept Point.+40dBm (Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)
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TR9772
46dBm
40dBm
26dBm
1700-2400MHZ
S11-------Deg
---------S21---------Mag
S12--------Deg
S22--------Deg
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Untitled
Abstract: No abstract text available
Text: ANALOG ► DEVICES Preliminary Technical 10W S P D T R F MEMS Switch with Integrated Control and Boost Circuitry ADG1939 la ta FEATURES GENERAL DESCRIPTION Wide frequency range: dc to 6 GHz High power handling capability: 10W/40dBm 0.2 dB insertion loss at 1 GHz
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ADG1939
0W/40dBm
ADG1939
65dBm
24-Lead
CP-24-9)
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