H40P
Abstract: NN12 P35-5135-000-200
Text: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5135-000-200
28GHz
27dBm
P35-5135-000-200
28GHz
463/SM/02574/000
H40P
NN12
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GALI-S66
Abstract: No abstract text available
Text: MMIC Amplifier GALI-S66+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -27dBm, CURRENT = 16mA INPUT POWER = -27dBm, Temperature = +25°C 40 40 35 -45°C 35 13mA 30 +25°C 30 16mA 25 +85°C 25 19mA 20 dB (dB) 20 15 15 10 10
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GALI-S66+
-27dBm,
GALI-S66
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2110 - 2170mhz power module
Abstract: No abstract text available
Text: RMPA2059 WCDMA PowerEdge Power Amplifier Module Features General Description • 40% CDMA efficiency at +27dBm average output power • Single positive-supply operation and low power and shutdown modes • Meets UTMS/WCDMA and HSDPA performance requirements
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RMPA2059
RMPA2059
27dBm
2110 - 2170mhz power module
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NJG1600KB2
Abstract: GRM36 NJG1600
Text: 暫定資料 NJG1600KB2 Aug.23,2002 Ver.5 開発中 SPDT スイッチ GaAs MMIC Q概要 NJG1600KB2 は中電力、低損失を特徴とする SPDT スイッチ です。 100MHz から 2.5GHz の広帯域、 2.5V からの低電圧で動作し、 切替電圧 2.8V にて 27dBm の電力を切り替えることができます。
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NJG1600KB2
100MHz
27dBm
26dBm
GRM36)
NJG1600KB2
GRM36
NJG1600
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4 PIN TO46 package
Abstract: "TO46 4 pin" TO46 package 4 pin Photodetector 1550nm TIA AGC application note TO46 package AMT8210 AMT8210T46L4 AMT8210T46L5 TO46
Text: AMT8210 1.25 Gb/s 1310/1550nm PIN-TIA FEATURES • 1.25 Gb/s differential output TIA • DC to 1000 MHz bandwidth • +3.3V Operation • -27dBm Typical sensitivity • 1250-1620nm PIN Photodetector • Automatic Gain Control AGC • 0dBm Optical Overload
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AMT8210
1310/1550nm
-27dBm
1250-1620nm
AMT8210,
1620nm)
AMT8210
4 PIN TO46 package
"TO46 4 pin"
TO46 package 4 pin
Photodetector 1550nm
TIA AGC application note
TO46 package
AMT8210T46L4
AMT8210T46L5
TO46
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qualcomm umts chipset
Abstract: UMTS qualcomm block diagram of qualcomm AWT6270
Text: AWT6270 HELP TM 830-840 MHz WCDMA 3.4V/27dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm AWT6270 15% @ POUT = +7 dBm • Low Quiescent Current: 16 mA
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AWT6270
V/27dBm
AWT6270
qualcomm umts chipset
UMTS qualcomm
block diagram of qualcomm
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Untitled
Abstract: No abstract text available
Text: RF2436 RF2436Transmit/Receive Switch TRANSMIT/RECEIVE SWITCH Package Style: SOT-5 Features Single Positive Power Supply Low Current Consumption 1dB Insertion Loss at 900MHz 24dB Crosstalk Isolation at 900MHz +27dBm Output P1dB RX OUT 1
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RF2436Transmit/Receive
RF2436
900MHz
900MHz
27dBm
RF2436
28dBm
2500MHz.
2002/95/EC
DS120416
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MAX9985
Abstract: No abstract text available
Text: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise
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1200MHz
1700MHz
MAX19993
27dBm
1700MHz
1000MHz
1560MHz,
MAX19993A,
MAX19993.
MAX9985
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7133 voltage regulator
Abstract: MC20L10 photodiode preamplifier AGC MC2010 MC2010LDIEWP MC2010LWAFER MC2010SDIEWP MC2010SWAFER OC-24 MC20S
Text: MC2010 PIN Pre-amplifier with AGC for 3.3V Fibre-Optics Applications to 1.25Gbs q q q q q q q F EATURES D ESCRIPTION Low cost IC. Fabricated in advanced sub-mi cron pure-CMOS process. Receiver sensitivity better than -27dBm @ 1.25Gbs MC20L10 Minimum 830MHz bandwidth and multi-pole
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MC2010
25Gbs
-27dBm
MC20L10)
830MHz
25Gbs.
MC20S10)
MC2010
7133 voltage regulator
MC20L10
photodiode preamplifier AGC
MC2010LDIEWP
MC2010LWAFER
MC2010SDIEWP
MC2010SWAFER
OC-24
MC20S
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RF6509PCBA-410
Abstract: RF6509 900MHZ
Text: RF6509 Proposed 3.2V MODULE INTENDED TO INTEGRATE WITH 900MHZ AMR SOLUTIONS 1 RX Filter 31 30 29 2 Input V3S1 32 28 27 26 25 RX out/TX in Output V2S2 3 24 V1S2 4 23 V1S1 10 22 V2S1 5 Applications LNA Vcc TX Output Power: 27dBm TX Gain: 31dBm
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RF6509
900MHZ
27dBm
31dBm
32-Pin,
902MHz
928MHz
DS090817
RF6509PCBA-410
RF6509
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Untitled
Abstract: No abstract text available
Text: SX1238 WIRELESS, SENSING & TIMING DATASHEET SX1238 - Fully Integrated Transceiver with +27dBm TX Power RFI VBAT1&2 VR_ANA VR_DIG RC Oscillator Power Distribution System Single to Differential ANT Decimation & Filtering Mixers PREAMP Demodulator & Bit Synchronizer
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SX1238
SX1238
27dBm
ISO9001
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Untitled
Abstract: No abstract text available
Text: HE315 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 23 Features 21 Frequency Range: 1～110MHz(typ) l Gain: 20dB(typ) l IP3(out): 40dBm(typ) l l 27dBm Typical 1dB Compression Standard Hermetic Package SP-1A
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HE315
110MHz
40dBm
27dBm
15dBm
3300pF.
30dBm
18VDC)
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer VAY-1+ Typical Performance Curves Conversion Loss vs. IF @ RF=250.1MHz Conversion Loss @ IF=30MHz 6.0 10 5.9 LO = +24dBm LO = +27dBm Conversion Loss dB Conversion Loss (dB) 9 5.8 8 LO = +27dBm 7 5.7 5.6 6 5.5 5 5.4 4 5.3 3 2 5.2 1 5.1 5.0
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30MHz
24dBm
27dBm
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schematics for a PA amplifier
Abstract: MAX2242 APP3249 DECT schematic AN3249
Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DECT, Power Amplifier, PA, 1.9GHz, 1905MHz, 1905 MHz, DECT PA, DECT power amplifier May 27, 2004 APPLICATION NOTE 3249 1.9GHz DECT Power Amplifier Delivers +27dBm from 3.6V at 41% PAE The MAX2242 is an ultra-low cost silicon bipolar power amplifier PA with integrated bias-circuitry, logic-level
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1905MHz,
27dBm
MAX2242
29dBm
schematics for a PA amplifier
APP3249
DECT schematic
AN3249
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TOp-264 vg
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
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AVM-273HP+
27dBm
DG1677-1
TOp-264 vg
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RFPA5200
Abstract: MCS7
Text: RFPA5200 Preliminary 3.3V to 5.0V, 2.4GHz to 2.5GHz Integrated PA Module Package: Laminate, 4mm x 4 mm x 1 mm Features POUT = 27dBm, 5V < 3% Dynamic EVM 33dB Typical Gain High PAE Integrated Input and Output 50Match Integrated Power Detector
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RFPA5200
27dBm,
50Match
RFPA5200
RFPA5200:
DS121220
MCS7
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Mag 613
Abstract: MGF0918A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
Mag 613
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Untitled
Abstract: No abstract text available
Text: TGA2216-SM 0.1 – 3.0GHz 10W GaN Power Amplifier Applications • Commercial and military radar Communications Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 0.1 – 3.0GHz PSAT: >40dBm at PIN = 27dBm
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TGA2216-SM
40dBm
27dBm
35dBm
360mA,
TGA2216-SM
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UA 758 pc
Abstract: NJG1507R f 0952
Text: NJG1507R SPDT スイッチ GaAs MMIC •概要 NJG1507R は低損失、中電力、高アイソレーション を特徴とする SPDT スイッチです。 50MHz から 3.0GHz の広帯域、2.5V からの低電圧で 動作し、3.0V にて 27dBm までの電力を通過させること
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NJG1507R
50MHz
27dBm
22dBm
27dBm
UA 758 pc
NJG1507R
f 0952
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mitsubishi 7805
Abstract: 7805 pi MGF0918A 7805 smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
50pcs)
d-162
mitsubishi 7805
7805 pi
7805 smd
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AWT6270
Abstract: No abstract text available
Text: AWT6270 830-840 MHz/WCDMA 3.4V/27dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm AWT6270 15% @ POUT = +7 dBm • Low Quiescent Current: 16 mA
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AWT6270
V/27dBm
AWT6270
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Untitled
Abstract: No abstract text available
Text: HE390A Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 20 Features 18 16 Frequency Range: 10～500MHz l l P-1: 27dBm Standard l Hermetic Package SP-1A Operating Temperature Range: -55℃～+85℃
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HE390A
500MHz
27dBm
6800pF.
30dBm
18VDC)
10000p
17VDC
15dBm
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Untitled
Abstract: No abstract text available
Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026 P1dB =33.6dBm at 5V 802.11g 54Mb/s Class AB Performance RF IN POUT =26dBm at 2.5% EVM, VCC 5V, 570mA POUT =27dBm at 2.5% EVM,
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RFPA3026
54Mb/s
27dBm
513mA
26dBm
570mA
DS120110
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5964-6D
Abstract: No abstract text available
Text: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-6D
-45dBc
27dBm
5964-6D
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