Untitled
Abstract: No abstract text available
Text: HE385C/HEM385C/HES385C Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves Gain dB GAIN Features Frequency Range: 20～250MHz l Low Noise: 1.8dB(Typical) l 23dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation
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HE385C/HEM385C/HES385C
250MHz
23dBm
17VDC
13dBm
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Untitled
Abstract: No abstract text available
Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Single Power Supply 3.0V to 5.0V NC VCC1 NC 12 RF IN 2 Input Match 28dB Typical Small Signal Gain RF IN 3 10 RF OUT Power Detector Bias Circuit NC 4 9 NC 5 +23dBm, <4%EVM, 250mA at VCC =5.0V
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RF5125
16-Pin,
21dBm,
185mA
23dBm,
250mA
2400MHz
2500MHz
IEEE802
11b/g/n
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Untitled
Abstract: No abstract text available
Text: Surface Mount Frequency Mixer Level 23 LO Power +23dBm 400 to 2500 MHz Maximum Ratings Operating Temperature Features -45°C to 85°C Storage Temperature • • • • RoHS compliant very high IP3, 32 dBm typ. wideband, 400 to 2500 MHz excellent L-R isolation, 50 dB typ.
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LAVI-25VH+
23dBm)
CK605
2002/95/EC)
mater54
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microwave MARCONI
Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm
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P35-5123-000-200
26GHz
23dBm
24GHz
P35-5123-000-200
20-26GHz
20-26GHz.
463/SM/02579/000
microwave MARCONI
H40P
NN12
MARCONI power
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer ZAY-1 Typical Performance Curves Conversion Loss vs. IF @ RF=250.1MHz Conversion Loss @ IF=30MHz 6.10 14 6.05 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 6.00 LO = +23dBm 5.95 5.90 10 5.85 9 5.80 8
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30MHz
20dBm
23dBm
26dBm
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer ZAY-2 Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=500.1MHz 15 7.00 6.95 LO = +20dBm 13 LO = +23dBm 12 LO = +26dBm LO = +23dBm Conversion Loss dB Conversion Loss (dB) 14 6.90 6.85 11 6.80 10 6.75 9 6.70
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30MHz
20dBm
23dBm
26dBm
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MGF0916A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
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sige 5003L
Abstract: SE5003L SiGe 2527L 5003L SE5003L-EK1 SIGE SEMICONDUCTOR 2527l
Text: SE5003L 5 GHz, 23dBm Power Amplifier with Power Detector Preliminary Information Applications Product Description The SE5003L is a 5GHz power amplifier offering high linear power for wireless LAN applications. The SE5003L incorporates a power detector for closed
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SE5003L
23dBm
IEEE802
SE5003L
DST-00314
Aug-20-2010
sige 5003L
SiGe 2527L
5003L
SE5003L-EK1
SIGE SEMICONDUCTOR 2527l
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SE5003L
Abstract: sige 5003L SE5003L-EK1 SE5003 2527L SE5003L-R SIGE SEMICONDUCTOR 2527l 5003L SIGE 2527l
Text: SE5003L 5 GHz, 23dBm Power Amplifier with Power Detector Preliminary Information Applications Product Description The SE5003L is a 5GHz power amplifier offering high linear power for wireless LAN applications. The SE5003L incorporates a power detector for closed
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SE5003L
23dBm
IEEE802
SE5003L
DST-00314
Feb-25-2011
sige 5003L
SE5003L-EK1
SE5003
2527L
SE5003L-R
SIGE SEMICONDUCTOR 2527l
5003L
SIGE 2527l
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SCL 1058
Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
SCL 1058
GP145
IDS800
fet GP145
3268
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Transistor W03
Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
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AN1465
START540
23dBm,
OT-343
SC-70)
30mils
Transistor W03
AN1465
ultra low noise NPN transistor
ultra linearity rf transistor
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Untitled
Abstract: No abstract text available
Text: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features Single Power Supply 3.0V to 5.0V +23dBm, <4%EVM, 250mA at VCC =5.0V +21dBm, <4.0%EVM, 185mA atVCC =3.3V 28dB Typical Small Signal Gain 50 Input and Interstage Matching
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RF5112
21dBm,
185mA
2400MHz
2500MHz
23dBm,
250mA
16-Pin,
IEEE802
11b/g/n
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Untitled
Abstract: No abstract text available
Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features Single Power Supply 3.0V to 5.0V 28dB Typical Small Signal Gain 50 Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +23dBm, <4%EVM, 250mA at VCC =5.0V NC VC1 NC
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RF5125
2400MHz
2500MHz
23dBm,
250mA
21dBm,
185mA
16-Pin,
IEEE802
11b/g/n
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Untitled
Abstract: No abstract text available
Text: MAMX-009646-23DBML E-Series Surface Mount Mixer 2-2200 MHz M/A-COM Products Advanced - Rev. V1 Product Image Features • LO Power +23 dBm Up to +23 dBm RF Surface Mount Tape and reel packaging available 260°C Reflow Compatible
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MAMX-009646-23DBML
MAMX-009646-23DBML
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Untitled
Abstract: No abstract text available
Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 12.5dB Gain at 2.0GHz +23dBm P1dB 3.0dB Typical Noise Figure at
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RF3315Broadband
RF3315
300MHz
40dBm
23dBm
DS050318
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer ZFY-2+ Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=500.1MHz 14 8.0 7.8 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 7.6 LO = +23dBm 7.4 10 7.2 9 7.0 8 6.8 7 6.6
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30MHz
20dBm
23dBm
26dBm
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer ZFY-1 Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=250.1MHz 14 6.5 6.4 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 10 9 8 7 6.3 6.1 6.0 5.9 5.8 6 5.7 5 5.6 4 LO = +23dBm
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30MHz
20dBm
23dBm
26dBm
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Untitled
Abstract: No abstract text available
Text: RF5755 3.3V, 2.4GHz 802.11b/g/n WLAN FRONT-END MODULE Features C_RX N/C BT 13 LNA VDD 1 Integrated 2.5GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b Meeting 11b Spectral Mask
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RF5755
11b/g/n
16-pin,
20dBm,
23dBm
IEEE802
RF5755
12/22mil)
DS100324
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MGF0915A
Abstract: SCL 1058
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
SCL 1058
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GP1200
Abstract: gctl
Text: GP1200 2.4 GHz Power Amplifier Preliminary Datasheet Product Description GP1200 is a high performance power amplifier designed for Bluetooth in the 2.4 GHz band. It is based on InGaP HBT technology and is available in a compact 6 lead LPCC plastic package. With 29dB gain and 23dBm P-1dB, the
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GP1200
GP1200
23dBm
18nH/0402
nH/0402
gctl
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M103
Abstract: M105 M107 2551N ACSP-2551 C3EX
Text: ACSP-2551 PADDED ZERO BIAS SCHOTTKYDETECTORS Frequency Range min Flatness vs. Frequency (max) Typical TSS Internal Attenuation Sensitivity (min) 0.01 – 18 0.5/octave -44 7 400 GHz ±dB dBm dB mV/mW NOTES: Maximum input power: +23dBm Sensitivity is measured into an open circuit load (>10k ohm).
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ACSP-2551
23dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202F,
M103
M105
M107
2551N
ACSP-2551
C3EX
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M103
Abstract: M105 M107
Text: ACSP-2521 PADDED ZERO BIAS SCHOTTKYDETECTORS Frequency Range min Flatness vs. Frequency (max) Typical TSS Internal Attenuation Sensitivity (min) 5 – 18 0.5/octave -44 6 500 GHz ±dB dBm dB mV/mW NOTES: Maximum input power: +23dBm Sensitivity is measured into an open circuit load (>10k ohm).
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ACSP-2521
23dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202F,
M103
M105
M107
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"RF Connector"
Abstract: SCT2000 1800mhz rf frequency power amplifier circuit AN1352 START420 amplifier rf 18dbm gain 18db 60OHM w03 TRANSISTOR
Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, N F = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
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AN1352
START420
23dBm,
SC-70
OT-343)
30mils
"RF Connector"
SCT2000
1800mhz rf frequency power amplifier circuit
AN1352
amplifier rf 18dbm gain 18db
60OHM
w03 TRANSISTOR
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60Ghz
Abstract: MGF0915A a4013
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
60Ghz
a4013
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