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    2SD1662 Search Results

    2SD1662 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1662 Toshiba TRANS DARLINGTON NPN 100V 10A 3(2-16C1A) Original PDF
    2SD1662 Toshiba NPN Transistor Original PDF
    2SD1662 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1662 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1662 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1662 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1662 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1662 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1662 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1662 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1662 Toshiba Silicon NPN transistor for high current switching applications Scan PDF
    2SD1662 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) Scan PDF

    2SD1662 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662

    Untitled

    Abstract: No abstract text available
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 2-16C1A

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 D1662 2SD1662

    d1662

    Abstract: 2SD1662 D-1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 d1662 2SD1662 D-1662

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 D1662 2SD1662

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1662 ○ 大電流スイッチング用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE (sat) = 1.5 V (最大) (IC = 15 A)


    Original     		PDF 2SD1662 2-16C1A 20070701-JA D1662 2SD1662

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 D1662 2SD1662

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    nec 2sc3157

    Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
    Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419


    OCR Scan     		PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678

    2SD1662

    Abstract: No abstract text available
    Text: TO SHIBA 2SD1662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 662 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 53.2 ±0.2 15.9MAX • High DC Current Gain : hjrß = 1000 (Min.) • Low Collector Saturation Voltage iS# : v CE(sat) = 1-s v (Max.)


    OCR Scan     		PDF 2SD1662 --10A, 2SD1662

    2SD1662

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1662 2 S D 1 662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH CURRENT SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 1000 (Min.) Low Collector Saturation Voltage : VCE (sat)“ ±-ov uviaxj Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1662 2SD1662

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D1 6 6 2 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 1 5.9M A X • High DC Current Gain : hjrg —1000 (Min.) • Low Collector Saturation Voltage S53 2 + 0.2 : VCE(sat) = 1*5V (Max-)


    OCR Scan     		PDF 2SD1662

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1662 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 5 9 MAX. FEATURES: 03,Z±O.Z I . High DC Current Gain T. i/ ^ O : hFE=1000(Min.) (VCE=3V, IC=15A) . Low Collector Saturation Voltage


    OCR Scan     		PDF 2SD1662 -55-T

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1662 INDUSTRIAL APPLICATIONS Unit in nun HIGH CURRENT SWITCHING APPLICATIONS. 1 Si9MAX. 0 S . Z ± O l Z FEATURES: . High DC Current Gain : h FE-1000 Min. (VC e -3V, Ic = 15A) . Low Collector Saturation Voltage : V C E(sat)=1.5V(Max.)


    OCR Scan     		PDF 2SD1662 FE-1000

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD1662 2 S D 1 662 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N HIGH CURRENT SW ITCHING APPLICATIONS • • Unit in mm High DC Current Gain : hpg = 1000 (Min.) Low Collector Saturation Voltage : v CE(sat) = 1-5V (Max.) Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1662

    2SD1662

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1662 2 S D 1 662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH CURRENT SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 1000 (Min.) Low Collector Saturation Voltage : VCE (sat)“ ±-ov uviaxj Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1662 2SD1662

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266